1N5406GH
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Taiwan Semiconductor Corporation 1N5406GH

Manufacturer No:
1N5406GH
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The 1N5406GH is a general-purpose rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N5400 series, known for its robust performance in various rectification applications. The 1N5406GH is housed in a DO-201AD package, which is a molded epoxy body with matte tin plated leads, ensuring good solderability and reliability. It is RoHS-compliant and meets UL 94 V-0 flammability ratings, making it suitable for a wide range of electronic systems.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum RMS Voltage VRMS 420 V
Maximum DC Blocking Voltage VDC 600 V
Maximum Average Forward Rectified Current IF(AV) 3.0 A
Peak Forward Surge Current IFSM 200 A
Maximum Instantaneous Forward Voltage VF 1.2 V
Maximum DC Reverse Current IR 5.0 μA
Operating Junction and Storage Temperature Range TJ, TSTG -50 to +150 °C
Package DO-201AD

Key Features

  • Low Forward Voltage Drop: The 1N5406GH has a low forward voltage drop of 1.2 V, which minimizes power loss during operation.
  • Low Leakage Current: It features a low DC reverse current of 5.0 μA, reducing standby power consumption.
  • High Forward Surge Capability: The diode can handle a peak forward surge current of 200 A, making it robust against transient conditions.
  • High Temperature Capability: The diode can operate over a wide temperature range from -50 °C to +150 °C.
  • RoHS Compliance: The 1N5406GH is RoHS-compliant and meets UL 94 V-0 flammability ratings, ensuring environmental and safety standards are met.

Applications

  • General Purpose Rectification: Suitable for rectification in power supplies, inverters, and converters.
  • Freewheeling Diodes: Often used as freewheeling diodes in various power electronic circuits.
  • Industrial and Consumer Electronics: Used in a wide range of industrial and consumer electronic devices requiring reliable rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5406GH diode?

    The maximum repetitive peak reverse voltage (VRRM) of the 1N5406GH diode is 600 V.

  2. What is the maximum average forward rectified current of the 1N5406GH?

    The maximum average forward rectified current (IF(AV)) of the 1N5406GH is 3.0 A.

  3. What is the package type of the 1N5406GH diode?

    The 1N5406GH diode is housed in a DO-201AD package.

  4. Is the 1N5406GH diode RoHS-compliant?
  5. What is the operating junction temperature range of the 1N5406GH?

    The operating junction and storage temperature range of the 1N5406GH is from -50 °C to +150 °C).

  6. What are some typical applications of the 1N5406GH diode?

    The 1N5406GH is typically used in general purpose rectification of power supplies, inverters, converters, and as freewheeling diodes).

  7. What is the peak forward surge current capability of the 1N5406GH?

    The peak forward surge current (IFSM) of the 1N5406GH is 200 A).

  8. Does the 1N5406GH meet any specific safety standards?
  9. What is the maximum instantaneous forward voltage of the 1N5406GH?

    The maximum instantaneous forward voltage (VF) of the 1N5406GH is 1.2 V).

  10. Is the 1N5406GH suitable for high-temperature applications?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:25pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number 1N5406GH 1N5407GH 1N5408GH 1N5401GH 1N5402GH 1N5404GH 1N5406G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation onsemi
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 800 V - 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 3A 3A 3A 3A (DC) 3A (DC) 3A 3A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1.1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 10 µA @ 600 V
Capacitance @ Vr, F 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AA, DO-27, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD Axial
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -65°C ~ 150°C

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