1N5406G
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onsemi 1N5406G

Manufacturer No:
1N5406G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 600V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5406G diode, produced by onsemi, is a standard recovery rectifier designed for high-current applications. It features a continuous reverse voltage rating of 600V and can handle average rectified currents up to 3A. This diode is particularly suited for circuit protection and voltage rectification in various power supply and electrical systems. Its low forward voltage drop of 1.2V and high surge current capability make it an efficient choice for a wide range of applications.

Key Specifications

Parameter Value Unit
Average Rectified Current (Io) 3.0 A
Peak Repetitive Reverse Voltage (Vrrm) 600 V
Maximum Forward Voltage Drop (Vf) 1.2 V
Maximum Reverse Current (Ir) 10 µA
Peak Forward Surge Current (IFSM) 200 A
Package Style CASE 267
Mounting Method Through Hole
Operating Junction Temperature -55°C to 150°C

Key Features

  • High current to small size ratio
  • High surge current capability
  • Low forward voltage drop of 1.2V
  • Void-free economical plastic package
  • Available in volume quantities
  • Plastic meets UL 94V-0 for flammability
  • Mechanical characteristics include epoxy molded case, corrosion-resistant surfaces, and readily solderable terminal leads

Applications

The 1N5406G diode is generally used for the conversion of AC to DC in power supplies, inverters, converters, and as freewheeling diodes. It is optimized for low conduction losses and can handle very large currents, making it suitable for a variety of power supply and electrical applications.

Q & A

  1. What is the maximum reverse voltage rating of the 1N5406G diode?

    The maximum reverse voltage rating is 600V.

  2. What is the maximum average rectified current of the 1N5406G diode?

    The maximum average rectified current is 3.0A.

  3. What is the forward voltage drop of the 1N5406G diode?

    The forward voltage drop is 1.2V.

  4. What is the maximum reverse current of the 1N5406G diode?

    The maximum reverse current is 10 µA.

  5. What is the peak forward surge current capability of the 1N5406G diode?

    The peak forward surge current capability is 200A.

  6. What type of package does the 1N5406G diode come in?

    The diode comes in a CASE 267 package with a through-hole mounting method.

  7. What are the operating junction temperature limits for the 1N5406G diode?

    The operating junction temperature range is -55°C to 150°C.

  8. Is the 1N5406G diode RoHS-compliant?
  9. What are some common applications of the 1N5406G diode?
  10. Does the 1N5406G diode meet any specific flammability standards?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AA, DO-27, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 150°C
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Similar Products

Part Number 1N5406G 1N5408G 1N5407G 1N5406K 1N5406GH 1N5401G 1N5402G 1N5404G 1N5406 1N5406-G
Manufacturer onsemi SMC Diode Solutions onsemi Diotec Semiconductor Taiwan Semiconductor Corporation onsemi onsemi onsemi NTE Electronics, Inc Comchip Technology
Product Status Active Active Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 1000 V 800 V 600 V 600 V 100 V 200 V 400 V 600 V 600 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A 1.1 V @ 3 A 1 V @ 3 A - 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1.2 V @ 3 A 1 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - - - - -
Current - Reverse Leakage @ Vr 10 µA @ 600 V 5 µA @ 1000 V 10 µA @ 800 V 10 µA @ 600 V 5 µA @ 600 V 10 µA @ 100 V 10 µA @ 200 V 10 µA @ 400 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F - 30pF @ 4V, 1MHz - - 25pF @ 4V, 1MHz - - - 30pF @ 4V, 1MHz -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AA, DO-27, Axial DO-201AD, Axial DO-201AA, DO-27, Axial DO-204AC, DO-15, Axial DO-201AD, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AA, DO-27, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package Axial DO-201AD Axial DO15/DO204AC DO-201AD Axial Axial Axial DO-201AD DO-27 (DO-201AD)
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -50°C ~ 175°C -55°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -55°C ~ 150°C -65°C ~ 125°C

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