1N5406G B0G
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Taiwan Semiconductor Corporation 1N5406G B0G

Manufacturer No:
1N5406G B0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 600V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5406G B0G is a standard recovery rectifier diode designed for high-current applications. Produced by Taiwan Semiconductor Corporation, this diode features lead-free tin-plated terminals and a UL94V-0 flame-rated molded plastic case. It is known for its high current capability, low forward voltage drop, and low reverse leakage current, making it suitable for a variety of power rectification tasks.

Key Specifications

ParameterValue
Voltage - DC Reverse (Vr) (Max)600V
Current Rating3A
Forward Voltage (Vf) (Max) @ If1.2V @ 3A
Current - Reverse Leakage @ Vr5μA @ 600V
Power Dissipation6.25W
Max Forward Surge Current (Ifsm)200A
Diameter5.6mm
Height6.35mm
Length9.5mm
Width6.35mm
RoHS StatusRoHS Compliant
Lead FreeLead Free

Key Features

  • High current capability up to 3A
  • Low forward voltage drop of 1.2V @ 3A
  • Low reverse leakage current of 5μA @ 600V
  • Void-free economical plastic package
  • Available in volume quantities
  • Plastic meets UL 94V-0 for flammability
  • High surge current capability up to 200A

Applications

The 1N5406G B0G rectifier diode is generally used for the conversion of AC (alternating current) to DC (direct current). It is optimized for low conduction losses and can handle very large currents, making it suitable for power supplies, motor drives, and other high-power circuits. Additionally, it can be used in applications requiring protection against transient over-voltages.

Q & A

  1. What is the maximum DC reverse voltage of the 1N5406G B0G diode?
    The maximum DC reverse voltage is 600V.
  2. What is the current rating of the 1N5406G B0G diode?
    The current rating is 3A.
  3. What is the forward voltage drop of the 1N5406G B0G diode at 3A?
    The forward voltage drop is 1.2V @ 3A.
  4. What is the reverse leakage current of the 1N5406G B0G diode at 600V?
    The reverse leakage current is 5μA @ 600V.
  5. Can the 1N5406G B0G diode handle surge currents?
    Yes, it can handle a maximum forward surge current of 200A.
  6. Is the 1N5406G B0G diode RoHS compliant?
    Yes, it is RoHS compliant and lead-free.
  7. What are the dimensions of the 1N5406G B0G diode?
    The dimensions are 5.6mm in diameter, 6.35mm in height, and 9.5mm in length.
  8. What is the power dissipation of the 1N5406G B0G diode?
    The power dissipation is 6.25W.
  9. Can the 1N5406G B0G diode be used in high-power circuits?
    Yes, it is suitable for high-power circuits due to its high current and surge current capabilities.
  10. What type of package does the 1N5406G B0G diode come in?
    The diode comes in a void-free economical plastic package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:25pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number 1N5406G B0G 1N5406GHB0G 1N5407G B0G 1N5408G B0G 1N5401G B0G 1N5402G B0G 1N5404G B0G 1N5406G A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 800 V - 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1.1 V @ 3 A 1 V @ 3 A 1 V @ 3 A 1 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V
Capacitance @ Vr, F 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz 25pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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