1N4004GR0
  • Share:

Taiwan Semiconductor Corporation 1N4004GR0

Manufacturer No:
1N4004GR0
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
1A,400V,STD.GLASS PASSIVATED REC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004GR0 is a standard recovery rectifier diode produced by Taiwan Semiconductor Corporation. This diode is part of the 1N400x series, known for its reliability and versatility in various electrical and electronic applications. It is designed to handle high voltage and current requirements, making it suitable for a wide range of power management and rectification needs.

Key Specifications

ParameterValueUnit
Maximum Repetitive Peak Reverse Voltage (VRRM)400V
Maximum RMS Voltage (VRMS)280V
Maximum DC Blocking Voltage (VDC)400V
Maximum Average Forward Rectified Current (IF(AV))1.0A
Peak Forward Surge Current (IFSM)30 A (8.3 ms single half sine-wave)A
Maximum Instantaneous Forward Voltage (VF)1.1V
Maximum DC Reverse Current (IR)5.0 μAμA
Operating Junction and Storage Temperature Range-50 to +150 °C°C
Package TypeDO-204AL (DO-41), Axial

Key Features

  • High voltage and current handling capabilities.
  • Standard recovery rectifier suitable for general-purpose applications.
  • DO-204AL (DO-41) axial package for easy mounting and connection.
  • Wide operating temperature range from -50°C to +150°C.
  • Low forward voltage drop (VF) of 1.1 V at 1 A.
  • High peak forward surge current (IFSM) of 30 A for 8.3 ms single half sine-wave.

Applications

  • Power supplies and rectifier circuits.
  • DC power systems and battery chargers.
  • Audio and radio equipment.
  • Automotive and industrial control systems.
  • General-purpose rectification in electronic devices.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4004GR0 diode?
    The maximum repetitive peak reverse voltage (VRRM) is 400 V.
  2. What is the maximum average forward rectified current of the 1N4004GR0 diode?
    The maximum average forward rectified current (IF(AV)) is 1.0 A.
  3. What is the package type of the 1N4004GR0 diode?
    The package type is DO-204AL (DO-41), axial.
  4. What is the operating temperature range of the 1N4004GR0 diode?
    The operating junction and storage temperature range is from -50°C to +150°C.
  5. What is the peak forward surge current of the 1N4004GR0 diode?
    The peak forward surge current (IFSM) is 30 A for an 8.3 ms single half sine-wave.
  6. What is the maximum instantaneous forward voltage of the 1N4004GR0 diode?
    The maximum instantaneous forward voltage (VF) is 1.1 V at 1 A.
  7. What are common applications of the 1N4004GR0 diode?
    Common applications include power supplies, DC power systems, audio and radio equipment, automotive and industrial control systems, and general-purpose rectification in electronic devices.
  8. Is the 1N4004GR0 diode suitable for high-voltage applications?
    Yes, the 1N4004GR0 diode is suitable for high-voltage applications up to 400 V.
  9. What is the maximum DC reverse current of the 1N4004GR0 diode?
    The maximum DC reverse current (IR) is 5.0 μA at rated DC blocking voltage.
  10. Can the 1N4004GR0 diode be used in automotive applications?
    Yes, the 1N4004GR0 diode can be used in automotive applications due to its robust specifications and wide operating temperature range.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:10pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
240

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

SMBJ6V0A
SMBJ6V0A
Taiwan Semiconductor Corporation
TVS DIODE 6VWM 10.3VC DO214AA
1.5KE68A A0G
1.5KE68A A0G
Taiwan Semiconductor Corporation
TVS DIODE 58.1VWM 92VC DO201
BAV99L
BAV99L
Taiwan Semiconductor Corporation
SOT-23, 70V, 0.2A, SWITCHING DIO
BZV55C3V6 L0G
BZV55C3V6 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BZV55B15 L0G
BZV55B15 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF
BZV55B16 L1G
BZV55B16 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 16V 500MW MINI MELF
BZV55B3V9 L1G
BZV55B3V9 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
MMBT3906L RFG
MMBT3906L RFG
Taiwan Semiconductor Corporation
TRANS PNP 40V 0.2A SOT23
MMBT2222A RFG
MMBT2222A RFG
Taiwan Semiconductor Corporation
TRANS NPN 40V 0.6A SOT23
BC847A RFG
BC847A RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT23
BC856B RFG
BC856B RFG
Taiwan Semiconductor Corporation
TRANS PNP 65V 0.1A SOT23
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23