BAS19LT1G
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onsemi BAS19LT1G

Manufacturer No:
BAS19LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GP 120V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS19LT1G is a high-voltage switching diode produced by onsemi. This device is part of the BAS19L, BAS20L, and BAS21L series, known for their high voltage and current handling capabilities. The BAS19LT1G is specifically designed for applications requiring robust switching performance and is available in the SOT-23 (TO-236) package. It is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

CharacteristicSymbolValueUnit
Continuous Reverse VoltageVR120Vdc
Repetitive Peak Reverse VoltageVRRM120Vdc
Continuous Forward CurrentIF200mAdc
Peak Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz)IFSM2A
Junction and Storage Temperature RangeTJ, Tstg−55 to +150°C
Power Dissipation (Mounted on FR-5 Board)PD385mW
Thermal Resistance Junction-to-Ambient (SOT-23)RJA556°C/W
Reverse Voltage Leakage Current (VR = 100 Vdc)IR0.1μAdc
Forward Voltage (IF = 100 mAdc)VF1.0Vdc
Diode Capacitance (VR = 0, f = 1.0 MHz)CD5.0pF
Reverse Recovery Timetrr50ns

Key Features

  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and compliance with modern regulations.
  • High voltage handling with continuous reverse voltage (VR) and repetitive peak reverse voltage (VRRM) of 120 Vdc.
  • Continuous forward current (IF) of 200 mA and peak forward surge current (IFSM) of 2 A.
  • Broad junction and storage temperature range of −55 to +150 °C.
  • Low forward voltage (VF) of 1.0 Vdc at 100 mA forward current.
  • Low diode capacitance (CD) of 5.0 pF at 1 MHz.
  • Fast reverse recovery time (trr) of 50 ns.
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.

Applications

The BAS19LT1G is suitable for a variety of applications requiring high-voltage switching, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics.
  • Power supplies: For voltage regulation and protection in power supply circuits.
  • Consumer electronics: In devices such as TVs, audio equipment, and other consumer appliances.
  • Industrial control systems: For high-voltage switching and protection in industrial control circuits.
  • Telecommunications: In telecommunications equipment where high reliability and performance are critical.

Q & A

  1. What is the continuous reverse voltage rating of the BAS19LT1G?
    The continuous reverse voltage rating of the BAS19LT1G is 120 Vdc.
  2. What is the maximum forward current for the BAS19LT1G?
    The maximum continuous forward current for the BAS19LT1G is 200 mA.
  3. What is the peak forward surge current for the BAS19LT1G?
    The peak forward surge current for the BAS19LT1G is 2 A.
  4. What is the junction and storage temperature range for the BAS19LT1G?
    The junction and storage temperature range for the BAS19LT1G is −55 to +150 °C.
  5. Is the BAS19LT1G RoHS compliant?
    Yes, the BAS19LT1G is Pb-free, halogen-free, and RoHS compliant.
  6. What is the thermal resistance junction-to-ambient for the BAS19LT1G in an SOT-23 package?
    The thermal resistance junction-to-ambient for the BAS19LT1G in an SOT-23 package is 556 °C/W.
  7. What is the reverse recovery time of the BAS19LT1G?
    The reverse recovery time of the BAS19LT1G is 50 ns.
  8. Is the BAS19LT1G suitable for automotive applications?
    Yes, the BAS19LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  9. What is the forward voltage drop of the BAS19LT1G at 100 mA forward current?
    The forward voltage drop of the BAS19LT1G at 100 mA forward current is 1.0 Vdc.
  10. What is the diode capacitance of the BAS19LT1G at 1 MHz?
    The diode capacitance of the BAS19LT1G at 1 MHz is 5.0 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):120 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 100 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number BAS19LT1G BAS19LT3G BAS16LT1G BAS19LT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 120 V 120 V 100 V 120 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 150 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 6 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 100 V 100 nA @ 100 V 1 µA @ 100 V 100 nA @ 100 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 2pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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