Overview
The SBAS40LT1G is a Schottky barrier diode produced by ON Semiconductor, designed for high-speed switching applications, circuit protection, and voltage clamping. This diode features an extremely low forward voltage, which reduces conduction loss and makes it ideal for handheld and portable applications where space is limited. The SBAS40LT1G is packaged in a miniature surface mount SOT-23 (TO-236) package, which is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Reverse Voltage | VR | 40 | V |
| Forward Continuous Current | IF | 120 | mA |
| Forward Surge Current (t = 1 s) | IFSM | 200 | mA |
| Forward Surge Current (t = 10 ms) | IFSM | 600 | mA |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +150 | °C |
| Reverse Leakage Current (VR = 25 V) | IR | 1.0 | µA |
| Forward Voltage (IF = 1.0 mA) | VF | 380 | mV |
| Forward Voltage (IF = 10 mA) | VF | 500 | mV |
| Forward Voltage (IF = 40 mA) | VF | 1.0 | V |
| Total Capacitance (VR = 1.0 V, f = 1.0 MHz) | CT | 5.0 | pF |
| Thermal Resistance (Junction-to-Ambient) | RθJA | 508 | °C/W |
Key Features
- Designed for high-speed switching applications, circuit protection, and voltage clamping.
- Extremely low forward voltage reduces conduction loss.
- Miniature surface mount SOT-23 (TO-236) package.
- Pb-free, halogen-free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
Applications
- High-speed switching applications.
- Circuit protection.
- Voltage clamping.
- Handheld and portable devices where space is limited.
- Automotive applications due to AEC-Q101 qualification.
Q & A
- What is the maximum reverse voltage of the SBAS40LT1G?
The maximum reverse voltage is 40 V.
- What is the forward continuous current rating of the SBAS40LT1G?
The forward continuous current rating is 120 mA.
- What is the operating junction and storage temperature range of the SBAS40LT1G?
The operating junction and storage temperature range is from −55°C to +150°C.
- Is the SBAS40LT1G RoHS compliant?
- What is the typical forward voltage of the SBAS40LT1G at 1 mA?
The typical forward voltage at 1 mA is 380 mV.
- What is the thermal resistance (junction-to-ambient) of the SBAS40LT1G?
The thermal resistance (junction-to-ambient) is 508 °C/W.
- What package type is used for the SBAS40LT1G?
The SBAS40LT1G is packaged in a SOT-23 (TO-236) surface mount package.
- Is the SBAS40LT1G suitable for automotive applications?
- What is the total capacitance of the SBAS40LT1G at 1 MHz?
The total capacitance at 1 MHz is 5.0 pF.
- What is the reverse leakage current of the SBAS40LT1G at 25 V?
The reverse leakage current at 25 V is 1.0 µA.
