MURS120HE3_A/I
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Vishay General Semiconductor - Diodes Division MURS120HE3_A/I

Manufacturer No:
MURS120HE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 2A DO214AA
Delivery:
Payment:
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Product Introduction

Overview

The MURS120HE3_A/I is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It features a glass passivated pellet chip junction and is ideal for automated placement, making it suitable for various industrial, consumer, computer, and telecommunication applications.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM200V
Maximum Average Forward Rectified CurrentIF(AV)1.0A
Peak Forward Surge CurrentIFSM40A
Maximum Instantaneous Forward VoltageVF0.71V
Maximum Reverse Recovery Timetrr25 ns
Operating Junction and Storage Temperature RangeTJ, TSTG-65 to +175°C
PackageSMB (DO-214AA)

Key Features

  • Glass passivated pellet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified (for automotive applications)
  • RoHS-compliant
  • Molding compound meets UL 94 V-0 flammability rating

Applications

The MURS120HE3_A/I is designed for use in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is suitable for various sectors including consumer, computer, and telecommunication industries.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS120HE3_A/I?
    The maximum repetitive peak reverse voltage is 200 V.
  2. What is the maximum average forward rectified current of the MURS120HE3_A/I?
    The maximum average forward rectified current is 1.0 A.
  3. What is the peak forward surge current of the MURS120HE3_A/I?
    The peak forward surge current is 40 A.
  4. What is the maximum instantaneous forward voltage of the MURS120HE3_A/I?
    The maximum instantaneous forward voltage is 0.71 V.
  5. What is the maximum reverse recovery time of the MURS120HE3_A/I?
    The maximum reverse recovery time is 25 ns.
  6. What is the operating junction and storage temperature range of the MURS120HE3_A/I?
    The operating junction and storage temperature range is -65 to +175 °C.
  7. What package type does the MURS120HE3_A/I use?
    The package type is SMB (DO-214AA).
  8. Is the MURS120HE3_A/I AEC-Q101 qualified?
    Yes, the MURS120HE3_A/I is AEC-Q101 qualified for automotive applications.
  9. Is the MURS120HE3_A/I RoHS-compliant?
    Yes, the MURS120HE3_A/I is RoHS-compliant.
  10. What are the typical applications of the MURS120HE3_A/I?
    The typical applications include high-frequency rectification and freewheeling in switching mode converters and inverters for consumer, computer, and telecommunication industries.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number MURS120HE3_A/I MURS140HE3_A/I MURS160HE3_A/I MURS320HE3_A/I MURS120HE3_A/H
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V 200 V
Current - Average Rectified (Io) 2A 2A 2A 4A 2A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 890 mV @ 4 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 200 V 2 µA @ 200 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AB, SMC DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AB (SMC) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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