MURS320HE3_A/I
  • Share:

Vishay General Semiconductor - Diodes Division MURS320HE3_A/I

Manufacturer No:
MURS320HE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 4A DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS320HE3_A/I is a surface-mount ultrafast plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring fast recovery times and low forward voltage drop. It is part of the DO-214AB (SMC) package series and is available in various configurations, including RoHS-compliant and AEC-Q101 qualified versions. The diode is suitable for a wide range of industrial, automotive, and consumer electronics applications due to its robust electrical and thermal characteristics.

Key Specifications

Parameter Symbol Unit Value
Maximum Repetitive Peak Reverse Voltage VRRM V 200
Maximum Average Forward Rectified Current IF(AV) A 3.0 (TL = 140 °C), 4.0 (TL = 130 °C)
Peak Forward Surge Current IFSM A 125
Reverse Recovery Time trr ns 25 (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A), 35 (IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM)
Forward Voltage Drop VF V 0.71 (IF = 3.0 A, TJ = 25 °C), 0.710 (IF = 3.0 A, TJ = 150 °C)
Maximum Junction Temperature TJ max. °C 175
Package Type DO-214AB (SMC)
Thermal Resistance Junction to Lead RθJL °C/W 11

Key Features

  • Ultrafast Recovery Time: The MURS320HE3_A/I features a fast recovery time of 25 ns, making it suitable for high-frequency applications.
  • Low Forward Voltage Drop: With a forward voltage drop as low as 0.71 V, this diode minimizes energy losses and improves system efficiency.
  • High Peak Forward Surge Current: The diode can handle a peak forward surge current of 125 A, ensuring robust performance under transient conditions.
  • RoHS Compliant and AEC-Q101 Qualified: Available in RoHS-compliant and AEC-Q101 qualified versions, making it suitable for automotive and industrial applications.
  • High Junction Temperature: The diode can operate up to a maximum junction temperature of 175 °C, enhancing its reliability in harsh environments.
  • Molding Compound Meets UL 94 V-0 Flammability Rating: Ensures the diode meets stringent safety standards.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Power Supplies: Used in high-performance power supplies and rectifier circuits.
  • Consumer Electronics: Ideal for use in consumer electronics requiring efficient and reliable rectification.
  • Switch-Mode Power Supplies: The ultrafast recovery time makes it a good choice for switch-mode power supplies.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS320HE3_A/I diode?

    The maximum repetitive peak reverse voltage is 200 V.

  2. What is the maximum average forward rectified current at 140 °C lead temperature?

    The maximum average forward rectified current at 140 °C is 3.0 A.

  3. What is the peak forward surge current rating of the diode?

    The peak forward surge current rating is 125 A.

  4. What is the typical reverse recovery time of the MURS320HE3_A/I diode?

    The typical reverse recovery time is 25 ns.

  5. What is the maximum junction temperature of the diode?

    The maximum junction temperature is 175 °C.

  6. Is the MURS320HE3_A/I diode RoHS compliant?
  7. What package type does the MURS320HE3_A/I diode use?

    The diode uses the DO-214AB (SMC) package type.

  8. What is the thermal resistance junction to lead of the diode?

    The thermal resistance junction to lead is 11 °C/W.

  9. Is the MURS320HE3_A/I diode AEC-Q101 qualified?
  10. What are some common applications of the MURS320HE3_A/I diode?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:890 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.31
2,876

Please send RFQ , we will respond immediately.

Same Series
MURS320-E3/57T
MURS320-E3/57T
DIODE GEN PURP 200V 3A DO214AB
MURS320-E3/9AT
MURS320-E3/9AT
DIODE GEN PURP 200V 3A DO214AB
MURS320HE3_A/H
MURS320HE3_A/H
DIODE GEN PURP 200V 3A DO214AB
MURS320HE3/9AT
MURS320HE3/9AT
DIODE GEN PURP 200V 3A DO214AB

Similar Products

Part Number MURS320HE3_A/I MURS340HE3_A/I MURS360HE3_A/I MURS120HE3_A/I MURS320HE3_A/H
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V 200 V
Current - Average Rectified (Io) 4A 3A 3A 2A 3A
Voltage - Forward (Vf) (Max) @ If 890 mV @ 4 A 1.28 V @ 4 A 1.28 V @ 4 A 875 mV @ 1 A 875 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 3 V 10 µA @ 3 V 2 µA @ 200 V 5 µA @ 200 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AA, SMB DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AA (SMB) DO-214AB (SMC)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC

Related Product By Brand

SM6T15CA-M3/52
SM6T15CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM15T39CAHE3/57T
SM15T39CAHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM6T220AHM3/I
SM6T220AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
BYQ28E-100-E3/45
BYQ28E-100-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 100V 5A TO220AB
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
1N4007GPHM3/73
1N4007GPHM3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAS40LTH-G3-08
BAS40LTH-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
1N4733A-TAP
1N4733A-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 1.3W DO41
BZX84C39-E3-08
BZX84C39-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX84C27-E3-08
BZX84C27-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 300MW SOT23-3
BZX84C8V2-HE3-18
BZX84C8V2-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 300MW SOT23-3
BZX84B3V3-E3-18
BZX84B3V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3