MURS320HE3_A/I
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Vishay General Semiconductor - Diodes Division MURS320HE3_A/I

Manufacturer No:
MURS320HE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 4A DO214AB
Delivery:
Payment:
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Product Introduction

Overview

The MURS320HE3_A/I is a surface-mount ultrafast plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring fast recovery times and low forward voltage drop. It is part of the DO-214AB (SMC) package series and is available in various configurations, including RoHS-compliant and AEC-Q101 qualified versions. The diode is suitable for a wide range of industrial, automotive, and consumer electronics applications due to its robust electrical and thermal characteristics.

Key Specifications

Parameter Symbol Unit Value
Maximum Repetitive Peak Reverse Voltage VRRM V 200
Maximum Average Forward Rectified Current IF(AV) A 3.0 (TL = 140 °C), 4.0 (TL = 130 °C)
Peak Forward Surge Current IFSM A 125
Reverse Recovery Time trr ns 25 (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A), 35 (IF = 1.0 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 10 % IRM)
Forward Voltage Drop VF V 0.71 (IF = 3.0 A, TJ = 25 °C), 0.710 (IF = 3.0 A, TJ = 150 °C)
Maximum Junction Temperature TJ max. °C 175
Package Type DO-214AB (SMC)
Thermal Resistance Junction to Lead RθJL °C/W 11

Key Features

  • Ultrafast Recovery Time: The MURS320HE3_A/I features a fast recovery time of 25 ns, making it suitable for high-frequency applications.
  • Low Forward Voltage Drop: With a forward voltage drop as low as 0.71 V, this diode minimizes energy losses and improves system efficiency.
  • High Peak Forward Surge Current: The diode can handle a peak forward surge current of 125 A, ensuring robust performance under transient conditions.
  • RoHS Compliant and AEC-Q101 Qualified: Available in RoHS-compliant and AEC-Q101 qualified versions, making it suitable for automotive and industrial applications.
  • High Junction Temperature: The diode can operate up to a maximum junction temperature of 175 °C, enhancing its reliability in harsh environments.
  • Molding Compound Meets UL 94 V-0 Flammability Rating: Ensures the diode meets stringent safety standards.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Power Supplies: Used in high-performance power supplies and rectifier circuits.
  • Consumer Electronics: Ideal for use in consumer electronics requiring efficient and reliable rectification.
  • Switch-Mode Power Supplies: The ultrafast recovery time makes it a good choice for switch-mode power supplies.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS320HE3_A/I diode?

    The maximum repetitive peak reverse voltage is 200 V.

  2. What is the maximum average forward rectified current at 140 °C lead temperature?

    The maximum average forward rectified current at 140 °C is 3.0 A.

  3. What is the peak forward surge current rating of the diode?

    The peak forward surge current rating is 125 A.

  4. What is the typical reverse recovery time of the MURS320HE3_A/I diode?

    The typical reverse recovery time is 25 ns.

  5. What is the maximum junction temperature of the diode?

    The maximum junction temperature is 175 °C.

  6. Is the MURS320HE3_A/I diode RoHS compliant?
  7. What package type does the MURS320HE3_A/I diode use?

    The diode uses the DO-214AB (SMC) package type.

  8. What is the thermal resistance junction to lead of the diode?

    The thermal resistance junction to lead is 11 °C/W.

  9. Is the MURS320HE3_A/I diode AEC-Q101 qualified?
  10. What are some common applications of the MURS320HE3_A/I diode?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:890 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-65°C ~ 175°C
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MURS320HE3_A/H
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Similar Products

Part Number MURS320HE3_A/I MURS340HE3_A/I MURS360HE3_A/I MURS120HE3_A/I MURS320HE3_A/H
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V 200 V
Current - Average Rectified (Io) 4A 3A 3A 2A 3A
Voltage - Forward (Vf) (Max) @ If 890 mV @ 4 A 1.28 V @ 4 A 1.28 V @ 4 A 875 mV @ 1 A 875 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 3 V 10 µA @ 3 V 2 µA @ 200 V 5 µA @ 200 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AA, SMB DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AA (SMB) DO-214AB (SMC)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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