MURS320HE3/9AT
  • Share:

Vishay General Semiconductor - Diodes Division MURS320HE3/9AT

Manufacturer No:
MURS320HE3/9AT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 3A DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS320HE3/9AT is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is particularly suited for use in consumer, computer, and telecommunication systems.

Key Specifications

Parameter Symbol Unit Value
Maximum Repetitive Peak Reverse Voltage VRRM V 200
Maximum Average Forward Rectified Current IF(AV) A 3.0
Peak Forward Surge Current IFSM A 125
Maximum Instantaneous Forward Voltage VF V 0.71 (at IF = 3.0 A, TJ = 25 °C)
Maximum Reverse Recovery Time trr ns 25
Operating Junction and Storage Temperature Range TJ, TSTG °C -65 to +175
Package SMC (DO-214AB)

Key Features

  • Glass passivated pellet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, with a maximum peak of 260 °C
  • AEC-Q101 qualified
  • Molding compound meets UL 94 V-0 flammability rating
  • Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

Applications

The MURS320HE3/9AT is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is suitable for various sectors including consumer electronics, computer systems, and telecommunication equipment.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS320HE3/9AT?

    The maximum repetitive peak reverse voltage is 200 V.

  2. What is the maximum average forward rectified current of the MURS320HE3/9AT?

    The maximum average forward rectified current is 3.0 A.

  3. What is the peak forward surge current of the MURS320HE3/9AT?

    The peak forward surge current is 125 A.

  4. What is the maximum instantaneous forward voltage of the MURS320HE3/9AT?

    The maximum instantaneous forward voltage is 0.71 V at IF = 3.0 A and TJ = 25 °C.

  5. What is the maximum reverse recovery time of the MURS320HE3/9AT?

    The maximum reverse recovery time is 25 ns.

  6. What is the operating junction and storage temperature range of the MURS320HE3/9AT?

    The operating junction and storage temperature range is -65 to +175 °C.

  7. Is the MURS320HE3/9AT AEC-Q101 qualified?
  8. What package type does the MURS320HE3/9AT use?

    The MURS320HE3/9AT uses the SMC (DO-214AB) package.

  9. What are the typical applications of the MURS320HE3/9AT?

    The MURS320HE3/9AT is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters, particularly in consumer electronics, computer systems, and telecommunication equipment.

  10. Is the MURS320HE3/9AT RoHS-compliant?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
188

Please send RFQ , we will respond immediately.

Same Series
MURS320-E3/57T
MURS320-E3/57T
DIODE GEN PURP 200V 3A DO214AB
MURS320-E3/9AT
MURS320-E3/9AT
DIODE GEN PURP 200V 3A DO214AB
MURS320HE3_A/H
MURS320HE3_A/H
DIODE GEN PURP 200V 3A DO214AB
MURS320HE3/9AT
MURS320HE3/9AT
DIODE GEN PURP 200V 3A DO214AB

Similar Products

Part Number MURS320HE3/9AT MURS340HE3/9AT MURS360HE3/9AT MURS320-E3/9AT
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V
Current - Average Rectified (Io) 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 3 A 1.25 V @ 3 A 1.25 V @ 3 A 875 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V 5 µA @ 200 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

SM6T39A-E3/52
SM6T39A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T30A-E3/5B
SM6T30A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM15T15A-E3/57T
SM15T15A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM6T39AHE3_A/H
SM6T39AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T220CAHM3_A/H
SM6T220CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T220AHE3/9AT
SM15T220AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AB
BAT54C-E3-08
BAT54C-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
MBR1545CT801HE3/45
MBR1545CT801HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
1N4007-E3/54
1N4007-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BZX84B12-E3-08
BZX84B12-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX84C62-G3-18
BZX84C62-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3