MURS320HE3/9AT
  • Share:

Vishay General Semiconductor - Diodes Division MURS320HE3/9AT

Manufacturer No:
MURS320HE3/9AT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 3A DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS320HE3/9AT is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is particularly suited for use in consumer, computer, and telecommunication systems.

Key Specifications

Parameter Symbol Unit Value
Maximum Repetitive Peak Reverse Voltage VRRM V 200
Maximum Average Forward Rectified Current IF(AV) A 3.0
Peak Forward Surge Current IFSM A 125
Maximum Instantaneous Forward Voltage VF V 0.71 (at IF = 3.0 A, TJ = 25 °C)
Maximum Reverse Recovery Time trr ns 25
Operating Junction and Storage Temperature Range TJ, TSTG °C -65 to +175
Package SMC (DO-214AB)

Key Features

  • Glass passivated pellet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, with a maximum peak of 260 °C
  • AEC-Q101 qualified
  • Molding compound meets UL 94 V-0 flammability rating
  • Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

Applications

The MURS320HE3/9AT is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is suitable for various sectors including consumer electronics, computer systems, and telecommunication equipment.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS320HE3/9AT?

    The maximum repetitive peak reverse voltage is 200 V.

  2. What is the maximum average forward rectified current of the MURS320HE3/9AT?

    The maximum average forward rectified current is 3.0 A.

  3. What is the peak forward surge current of the MURS320HE3/9AT?

    The peak forward surge current is 125 A.

  4. What is the maximum instantaneous forward voltage of the MURS320HE3/9AT?

    The maximum instantaneous forward voltage is 0.71 V at IF = 3.0 A and TJ = 25 °C.

  5. What is the maximum reverse recovery time of the MURS320HE3/9AT?

    The maximum reverse recovery time is 25 ns.

  6. What is the operating junction and storage temperature range of the MURS320HE3/9AT?

    The operating junction and storage temperature range is -65 to +175 °C.

  7. Is the MURS320HE3/9AT AEC-Q101 qualified?
  8. What package type does the MURS320HE3/9AT use?

    The MURS320HE3/9AT uses the SMC (DO-214AB) package.

  9. What are the typical applications of the MURS320HE3/9AT?

    The MURS320HE3/9AT is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters, particularly in consumer electronics, computer systems, and telecommunication equipment.

  10. Is the MURS320HE3/9AT RoHS-compliant?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
188

Please send RFQ , we will respond immediately.

Same Series
MURS320-E3/57T
MURS320-E3/57T
DIODE GEN PURP 200V 3A DO214AB
MURS320-E3/9AT
MURS320-E3/9AT
DIODE GEN PURP 200V 3A DO214AB
MURS320HE3_A/I
MURS320HE3_A/I
DIODE GEN PURP 200V 4A DO214AB
MURS320HE3_A/H
MURS320HE3_A/H
DIODE GEN PURP 200V 3A DO214AB

Similar Products

Part Number MURS320HE3/9AT MURS340HE3/9AT MURS360HE3/9AT MURS320-E3/9AT
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V
Current - Average Rectified (Io) 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 3 A 1.25 V @ 3 A 1.25 V @ 3 A 875 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V 5 µA @ 200 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

SM15T18A-M3/9AT
SM15T18A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
SM15T7V5A-E3/9AT
SM15T7V5A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AB
SM15T22AHE3/9AT
SM15T22AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM6T18AHE3/52
SM6T18AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T24CAHM3/I
SM6T24CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
BAV70-HE3-18
BAV70-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 250MA SOT23
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MUR160-E3/73
MUR160-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
SS14HE3/5AT
SS14HE3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO214AC
BZX84C24-E3-18
BZX84C24-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 300MW SOT23-3
BZX84B5V1-HE3-18
BZX84B5V1-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 300MW SOT23-3
BZX84C51-G3-08
BZX84C51-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3