MURS320HE3/9AT
  • Share:

Vishay General Semiconductor - Diodes Division MURS320HE3/9AT

Manufacturer No:
MURS320HE3/9AT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 3A DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS320HE3/9AT is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is particularly suited for use in consumer, computer, and telecommunication systems.

Key Specifications

Parameter Symbol Unit Value
Maximum Repetitive Peak Reverse Voltage VRRM V 200
Maximum Average Forward Rectified Current IF(AV) A 3.0
Peak Forward Surge Current IFSM A 125
Maximum Instantaneous Forward Voltage VF V 0.71 (at IF = 3.0 A, TJ = 25 °C)
Maximum Reverse Recovery Time trr ns 25
Operating Junction and Storage Temperature Range TJ, TSTG °C -65 to +175
Package SMC (DO-214AB)

Key Features

  • Glass passivated pellet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, with a maximum peak of 260 °C
  • AEC-Q101 qualified
  • Molding compound meets UL 94 V-0 flammability rating
  • Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

Applications

The MURS320HE3/9AT is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is suitable for various sectors including consumer electronics, computer systems, and telecommunication equipment.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS320HE3/9AT?

    The maximum repetitive peak reverse voltage is 200 V.

  2. What is the maximum average forward rectified current of the MURS320HE3/9AT?

    The maximum average forward rectified current is 3.0 A.

  3. What is the peak forward surge current of the MURS320HE3/9AT?

    The peak forward surge current is 125 A.

  4. What is the maximum instantaneous forward voltage of the MURS320HE3/9AT?

    The maximum instantaneous forward voltage is 0.71 V at IF = 3.0 A and TJ = 25 °C.

  5. What is the maximum reverse recovery time of the MURS320HE3/9AT?

    The maximum reverse recovery time is 25 ns.

  6. What is the operating junction and storage temperature range of the MURS320HE3/9AT?

    The operating junction and storage temperature range is -65 to +175 °C.

  7. Is the MURS320HE3/9AT AEC-Q101 qualified?
  8. What package type does the MURS320HE3/9AT use?

    The MURS320HE3/9AT uses the SMC (DO-214AB) package.

  9. What are the typical applications of the MURS320HE3/9AT?

    The MURS320HE3/9AT is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters, particularly in consumer electronics, computer systems, and telecommunication equipment.

  10. Is the MURS320HE3/9AT RoHS-compliant?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
188

Please send RFQ , we will respond immediately.

Same Series
MURS320-E3/57T
MURS320-E3/57T
DIODE GEN PURP 200V 3A DO214AB
MURS320-E3/9AT
MURS320-E3/9AT
DIODE GEN PURP 200V 3A DO214AB
MURS320HE3_A/H
MURS320HE3_A/H
DIODE GEN PURP 200V 3A DO214AB
MURS320HE3/9AT
MURS320HE3/9AT
DIODE GEN PURP 200V 3A DO214AB

Similar Products

Part Number MURS320HE3/9AT MURS340HE3/9AT MURS360HE3/9AT MURS320-E3/9AT
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V
Current - Average Rectified (Io) 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 3 A 1.25 V @ 3 A 1.25 V @ 3 A 875 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V 5 µA @ 200 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB

Related Product By Brand

SM6T12AHE3_A/I
SM6T12AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM15T39CA-M3/9AT
SM15T39CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM6T39CAHE3/52
SM6T39CAHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T68CAHM3/H
SM15T68CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
LL4148-M-08
LL4148-M-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 300MA SOD80
1N4004GPE-E3/54
1N4004GPE-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
MURS260HE3/52T
MURS260HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N4007GPEHE3/91
1N4007GPEHE3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
1N4007GPHM3/73
1N4007GPHM3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX84C47-E3-08
BZX84C47-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 47V 300MW SOT23-3
ZM4742A-GS18
ZM4742A-GS18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 1W DO213AB
BZX384B15-E3-18
BZX384B15-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323