MURS320-E3/57T
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Vishay General Semiconductor - Diodes Division MURS320-E3/57T

Manufacturer No:
MURS320-E3/57T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 3A DO214AB
Delivery:
Payment:
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Product Introduction

Overview

The MURS320-E3/57T is a surface-mount ultrafast plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring fast switching and low forward voltage drop. The MURS320-E3/57T is part of the DO-214AB (SMC) package series, known for its compact design and high-temperature capabilities, making it suitable for various electronic systems including power supplies, automotive electronics, and industrial equipment.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Maximum Average Forward Rectified Current at TL = 140 °C IF(AV) 3.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 125 A
Maximum Instantaneous Forward Voltage at IF = 3.0 A, TJ = 25 °C VF 0.875 V
Maximum Reverse Recovery Time trr 25 ns ns
Maximum Junction Temperature TJ max. 175 °C
Package Type DO-214AB (SMC)
Thermal Resistance Junction to Lead RθJL 11 °C/W

Key Features

  • Ultrafast Recovery Time: The MURS320-E3/57T features a maximum reverse recovery time of 25 ns, making it ideal for high-frequency applications.
  • Low Forward Voltage Drop: With a maximum instantaneous forward voltage of 0.875 V at 3.0 A, this diode minimizes power losses.
  • High Temperature Capability: The diode can operate within a junction temperature range of -65 °C to +175 °C.
  • RoHS and AEC-Q101 Compliance: Available in both commercial and automotive qualified versions, ensuring compliance with environmental and automotive standards.
  • Compact Package: The DO-214AB (SMC) package is compact and suitable for surface-mount applications, enhancing board space efficiency.

Applications

  • Power Supplies: Suitable for use in switching power supplies due to its fast recovery time and low forward voltage drop.
  • Automotive Electronics: AEC-Q101 qualified versions make it suitable for automotive applications requiring high reliability and performance.
  • Industrial Equipment: Used in various industrial applications where high current and voltage handling are necessary.
  • High-Frequency Circuits: Ideal for use in high-frequency circuits due to its ultrafast recovery characteristics.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS320-E3/57T?

    200 V

  2. What is the maximum average forward rectified current at TL = 140 °C?

    3.0 A

  3. What is the peak forward surge current rating of the MURS320-E3/57T?

    125 A (8.3 ms single half sine-wave)

  4. What is the maximum instantaneous forward voltage at IF = 3.0 A and TJ = 25 °C?

    0.875 V

  5. What is the maximum reverse recovery time of the MURS320-E3/57T?

    25 ns

  6. What is the maximum junction temperature of the MURS320-E3/57T?

    175 °C

  7. What package type is used for the MURS320-E3/57T?

    DO-214AB (SMC)

  8. Is the MURS320-E3/57T RoHS compliant?
  9. Is the MURS320-E3/57T AEC-Q101 qualified?
  10. What is the thermal resistance junction to lead for the MURS320-E3/57T?

    11 °C/W

  11. What are some common applications for the MURS320-E3/57T?

    Power supplies, automotive electronics, industrial equipment, and high-frequency circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number MURS320-E3/57T MURS360-E3/57T MURS340-E3/57T MURS320-M3/57T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 400 V 200 V
Current - Average Rectified (Io) 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 3 A 1.25 V @ 3 A 1.25 V @ 3 A 875 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 600 V 10 µA @ 400 V 5 µA @ 200 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC DO-214AB, SMC
Supplier Device Package DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC) DO-214AB (SMC)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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