MURS140HE3_A/I
  • Share:

Vishay General Semiconductor - Diodes Division MURS140HE3_A/I

Manufacturer No:
MURS140HE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS140HE3_A/I is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It features a glass passivated pellet chip junction, making it ideal for automated placement and high-efficiency operations.

Key Specifications

Parameter Symbol Unit Value
Maximum Repetitive Peak Reverse Voltage VRRM V 400
Maximum Average Forward Rectified Current at TL = 150 °C IF(AV) A 1.0
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM A 35
Maximum Reverse Recovery Time trr ns 50
Maximum Instantaneous Forward Voltage at IF = 1.0 A, TJ = 25 °C VF V 1.25
Maximum Junction Temperature TJ max. °C 175
Package Type SMB (DO-214AA)
Operating Junction and Storage Temperature Range TJ, TSTG °C -65 to +175

Key Features

  • Glass Passivated Pellet Chip Junction: Ensures high reliability and durability.
  • Ideal for Automated Placement: Suitable for high-volume manufacturing processes.
  • Ultrafast Reverse Recovery Time: 50 ns, which is crucial for high-frequency applications.
  • Low Switching Losses, High Efficiency: Optimized for minimal energy loss during switching operations.
  • High Forward Surge Capability: Can handle peak forward surge currents up to 35 A.
  • AEC-Q101 Qualified: Available with automotive ordering code HE3, ensuring compliance with automotive standards.
  • RoHS-Compliant: Meets environmental regulations with lead-free and RoHS-compliant materials.
  • Meets MSL Level 1, per J-STD-020: Can withstand a maximum peak temperature of 260 °C.

Applications

The MURS140HE3_A/I is typically used in high-frequency rectification and freewheeling applications within switching mode converters and inverters. These applications include:

  • Consumer electronics
  • Computer systems
  • Telecommunication equipment

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS140HE3_A/I?

    The maximum repetitive peak reverse voltage is 400 V.

  2. What is the maximum average forward rectified current at TL = 150 °C?

    The maximum average forward rectified current at TL = 150 °C is 1.0 A.

  3. What is the peak forward surge current rating of the MURS140HE3_A/I?

    The peak forward surge current rating is 35 A for an 8.3 ms single half sine-wave.

  4. What is the maximum reverse recovery time of the MURS140HE3_A/I?

    The maximum reverse recovery time is 50 ns.

  5. What is the maximum instantaneous forward voltage at IF = 1.0 A and TJ = 25 °C?

    The maximum instantaneous forward voltage at IF = 1.0 A and TJ = 25 °C is 1.25 V.

  6. What is the package type of the MURS140HE3_A/I?

    The package type is SMB (DO-214AA).

  7. Is the MURS140HE3_A/I AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified, available with the automotive ordering code HE3.

  8. What is the operating junction and storage temperature range of the MURS140HE3_A/I?

    The operating junction and storage temperature range is -65 to +175 °C.

  9. What are the typical applications of the MURS140HE3_A/I?

    Typical applications include high-frequency rectification and freewheeling in switching mode converters and inverters for consumer, computer, and telecommunication equipment.

  10. Is the MURS140HE3_A/I RoHS-compliant?

    Yes, it is RoHS-compliant and meets environmental regulations.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.18
403

Please send RFQ , we will respond immediately.

Same Series
MURS160HE3_A/H
MURS160HE3_A/H
DIODE GEN PURP 600V 2A DO214AA
MURS160-E3/5BT
MURS160-E3/5BT
DIODE GEN PURP 600V 2A DO214AA
MURS160-E3/52T
MURS160-E3/52T
DIODE GEN PURP 600V 2A DO214AA
MURS140-E3/52T
MURS140-E3/52T
DIODE GEN PURP 400V 2A DO214AA
MURS140-E3/5BT
MURS140-E3/5BT
DIODE GEN PURP 400V 2A DO214AA
MURS140HE3_A/H
MURS140HE3_A/H
DIODE GEN PURP 400V 2A DO214AA
MURS140HE3_A/I
MURS140HE3_A/I
DIODE GEN PURP 400V 2A DO214AA
MURS160HE3_A/I
MURS160HE3_A/I
DIODE GEN PURP 600V 2A DO214AA
MURS160/2
MURS160/2
DIODE GEN PURP 600V 2A DO214AA
MURS160HE3/5BT
MURS160HE3/5BT
DIODE GEN PURP 600V 2A DO214AA
MURS160HE3/52T
MURS160HE3/52T
DIODE GEN PURP 600V 2A DO214AA

Similar Products

Part Number MURS140HE3_A/I MURS340HE3_A/I MURS240HE3_A/I MURS160HE3_A/I MURS120HE3_A/I MURS140HE3_A/H
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 400 V 600 V 200 V 400 V
Current - Average Rectified (Io) 2A 3A 2A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.28 V @ 4 A 1.45 V @ 2 A 1.25 V @ 1 A 875 mV @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 35 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V 10 µA @ 3 V 5 µA @ 400 V 5 µA @ 600 V 2 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AB, SMC DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AB (SMC) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T6V8CAHM3_A/H
SM6T6V8CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM6T22CAHM3/H
SM6T22CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SMBJ5.0CAHM3/H
SMBJ5.0CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 9.2VC DO214AA
BYQ28E-100-E3/45
BYQ28E-100-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 100V 5A TO220AB
MBR2545CT-7HE3/45
MBR2545CT-7HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
BAT43W-G3-18
BAT43W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAV21W-HE3-08
BAV21W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
BZX84C10-E3-08
BZX84C10-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX84C39-E3-08
BZX84C39-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX84C6V8-E3-18
BZX84C6V8-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 300MW SOT23-3
BZX84B3V3-E3-18
BZX84B3V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX84C7V5-G3-08
BZX84C7V5-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 300MW SOT23-3