MURS140HE3_A/H
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Vishay General Semiconductor - Diodes Division MURS140HE3_A/H

Manufacturer No:
MURS140HE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 400V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The MURS140HE3_A/H is a high-performance, surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is particularly suited for use in consumer, computer, and telecommunication systems due to its ultrafast reverse recovery time and high efficiency.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 400 V
Maximum DC Blocking Voltage VDC 400 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A (TL = 150 °C), 2.0 A (TL = 125 °C) A
Peak Forward Surge Current IFSM 35 A A
Maximum Instantaneous Forward Voltage VF 1.25 V (TJ = 25 °C), 1.05 V (TJ = 150 °C) V
Maximum Reverse Recovery Time trr 50 ns ns
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C °C
Package DO-214AA (SMB)

Key Features

  • Glass Passivated Pellet Chip Junction: Ensures high reliability and performance.
  • Ultrafast Reverse Recovery Time: Reduces switching losses and increases efficiency.
  • Low Switching Losses, High Efficiency: Ideal for high-frequency applications.
  • High Forward Surge Capability: Handles peak forward surge currents effectively.
  • AEC-Q101 Qualified: Suitable for automotive applications.
  • RoHS-Compliant: Meets environmental standards.
  • Ideal for Automated Placement: Suitable for mass production and automated assembly lines.

Applications

The MURS140HE3_A/H is designed for use in:

  • High Frequency Rectification: In switching mode converters and inverters.
  • Freewheeling Applications: In consumer, computer, and telecommunication systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS140HE3_A/H?

    The maximum repetitive peak reverse voltage is 400 V.

  2. What is the maximum average forward rectified current at 150 °C lead temperature?

    The maximum average forward rectified current at 150 °C lead temperature is 1.0 A.

  3. What is the reverse recovery time of the MURS140HE3_A/H?

    The reverse recovery time is 50 ns.

  4. Is the MURS140HE3_A/H AEC-Q101 qualified?
  5. What is the operating junction and storage temperature range of the MURS140HE3_A/H?

    The operating junction and storage temperature range is -65 to +175 °C.

  6. What package type does the MURS140HE3_A/H use?

    The MURS140HE3_A/H uses the DO-214AA (SMB) package.

  7. Is the MURS140HE3_A/H RoHS-compliant?
  8. What are the typical applications of the MURS140HE3_A/H?

    The typical applications include high frequency rectification and freewheeling in switching mode converters and inverters for consumer, computer, and telecommunication systems.

  9. What is the maximum instantaneous forward voltage of the MURS140HE3_A/H at 25 °C?

    The maximum instantaneous forward voltage at 25 °C is 1.25 V.

  10. What is the peak forward surge current capability of the MURS140HE3_A/H?

    The peak forward surge current capability is 35 A.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number MURS140HE3_A/H MURS160HE3_A/H MURS340HE3_A/H MURS240HE3_A/H MURS140HE3_A/I MURS120HE3_A/H
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 400 V 400 V 400 V 200 V
Current - Average Rectified (Io) 2A 2A 3A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.25 V @ 1 A 1.28 V @ 4 A 1.45 V @ 2 A 1.25 V @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 50 ns 75 ns 75 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 600 V 10 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V 2 µA @ 200 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AB, SMC DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AB (SMC) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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