Vishay General Semiconductor - Diodes Division MURS120HE3_A/H

Manufacturer No:: MURS120HE3_A/H
Manufacturer:: Vishay General Semiconductor - Diodes Division
Package:: Tape & Reel (TR)
Description:: DIODE GEN PURP 200V 2A DO214AA
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Product Introduction

Overview

The MURS120HE3_A/H is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and is ideal for use in various electronic systems, including switching mode converters and inverters. It features a glass passivated pellet chip junction, making it suitable for automated placement and high-efficiency applications.

Key Specifications

Parameter	Symbol	Value	Unit
Maximum Repetitive Peak Reverse Voltage	V_RRM	200	V
Maximum DC Blocking Voltage	V_DC	200	V
Maximum Average Forward Rectified Current	I_F(AV)	1.0 A (at T_L = 155 °C), 2.0 A (at T_L = 145 °C)	A
Peak Forward Surge Current	I_FSM	40 A	A
Operating Junction and Storage Temperature Range	T_J, T_STG	-65 to +175	°C
Reverse Recovery Time	t_rr	25 ns (I_F = 0.5 A, I_R = 1.0 A), 35 ns (I_F = 1.0 A, dI/dt = 50 A/μs)	ns
Forward Voltage	V_F	0.71 V	V
Package		SMB (DO-214AA)

Key Features

Glass passivated pellet chip junction for high reliability and efficiency.
Ideal for automated placement due to its surface-mount design.
Ultrafast reverse recovery time, reducing switching losses and enhancing overall system efficiency.
High forward surge capability, ensuring robust performance under transient conditions.
AEC-Q101 qualified, making it suitable for automotive applications.
Meets MSL level 1, per J-STD-020, with a maximum peak temperature of 260 °C.
Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.

Applications

The MURS120HE3_A/H is designed for use in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is particularly suited for consumer, computer, and telecommunication systems where high efficiency and low switching losses are critical.

Q & A

What is the maximum repetitive peak reverse voltage of the MURS120HE3_A/H?
The maximum repetitive peak reverse voltage is 200 V.
What is the maximum average forward rectified current at 155 °C?
The maximum average forward rectified current at 155 °C is 1.0 A.
What is the reverse recovery time of the MURS120HE3_A/H?
The reverse recovery time is 25 ns (I_F = 0.5 A, I_R = 1.0 A) and 35 ns (I_F = 1.0 A, dI/dt = 50 A/μs).
Is the MURS120HE3_A/H AEC-Q101 qualified?
Yes, the MURS120HE3_A/H is AEC-Q101 qualified, making it suitable for automotive applications.
What is the operating junction and storage temperature range of the MURS120HE3_A/H?
The operating junction and storage temperature range is -65 to +175 °C.
What is the package type of the MURS120HE3_A/H?
The package type is SMB (DO-214AA).
What is the forward voltage of the MURS120HE3_A/H?
The forward voltage is 0.71 V.
Is the MURS120HE3_A/H RoHS-compliant?
Yes, the MURS120HE3_A/H is RoHS-compliant.
What are the typical applications of the MURS120HE3_A/H?
The typical applications include high-frequency rectification and freewheeling in switching mode converters and inverters for consumer, computer, and telecommunication systems.
What is the peak forward surge current of the MURS120HE3_A/H?
The peak forward surge current is 40 A.

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Quantity: 2,244

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Part Number	MURS120HE3_A/H	MURS160HE3_A/H	MURS140HE3_A/H	MURS120HE3_A/I	MURS320HE3_A/H
Manufacturer	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division	Vishay General Semiconductor - Diodes Division
Product Status	Active	Active	Active	Active	Active
Diode Type	Standard	Standard	Standard	Standard	Standard
Voltage - DC Reverse (Vr) (Max)	200 V	600 V	400 V	200 V	200 V
Current - Average Rectified (Io)	2A	2A	2A	2A	3A
Voltage - Forward (Vf) (Max) @ If	875 mV @ 1 A	1.25 V @ 1 A	1.25 V @ 1 A	875 mV @ 1 A	875 mV @ 3 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	35 ns	75 ns	75 ns	35 ns	35 ns
Current - Reverse Leakage @ Vr	2 µA @ 200 V	5 µA @ 600 V	5 µA @ 400 V	2 µA @ 200 V	5 µA @ 200 V
Capacitance @ Vr, F	-	-	-	-	-
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	DO-214AA, SMB	DO-214AA, SMB	DO-214AA, SMB	DO-214AA, SMB	DO-214AB, SMC
Supplier Device Package	DO-214AA (SMB)	DO-214AA (SMB)	DO-214AA (SMB)	DO-214AA (SMB)	DO-214AB (SMC)
Operating Temperature - Junction	-65°C ~ 175°C	-65°C ~ 175°C	-65°C ~ 175°C	-65°C ~ 175°C	-65°C ~ 175°C

Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	200 V
Current - Average Rectified (Io):	2A
Voltage - Forward (Vf) (Max) @ If:	875 mV @ 1 A
Speed:	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):	35 ns
Current - Reverse Leakage @ Vr:	2 µA @ 200 V
Capacitance @ Vr, F:	-
Mounting Type:	Surface Mount
Package / Case:	DO-214AA, SMB
Supplier Device Package:	DO-214AA (SMB)
Operating Temperature - Junction:	-65°C ~ 175°C