MURS120HE3_A/H
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Vishay General Semiconductor - Diodes Division MURS120HE3_A/H

Manufacturer No:
MURS120HE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The MURS120HE3_A/H is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and is ideal for use in various electronic systems, including switching mode converters and inverters. It features a glass passivated pellet chip junction, making it suitable for automated placement and high-efficiency applications.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM200V
Maximum DC Blocking VoltageVDC200V
Maximum Average Forward Rectified CurrentIF(AV)1.0 A (at TL = 155 °C), 2.0 A (at TL = 145 °C)A
Peak Forward Surge CurrentIFSM40 AA
Operating Junction and Storage Temperature RangeTJ, TSTG-65 to +175°C
Reverse Recovery Timetrr25 ns (IF = 0.5 A, IR = 1.0 A), 35 ns (IF = 1.0 A, dI/dt = 50 A/μs)ns
Forward VoltageVF0.71 VV
PackageSMB (DO-214AA)

Key Features

  • Glass passivated pellet chip junction for high reliability and efficiency.
  • Ideal for automated placement due to its surface-mount design.
  • Ultrafast reverse recovery time, reducing switching losses and enhancing overall system efficiency.
  • High forward surge capability, ensuring robust performance under transient conditions.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Meets MSL level 1, per J-STD-020, with a maximum peak temperature of 260 °C.
  • Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.

Applications

The MURS120HE3_A/H is designed for use in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is particularly suited for consumer, computer, and telecommunication systems where high efficiency and low switching losses are critical.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS120HE3_A/H?
    The maximum repetitive peak reverse voltage is 200 V.
  2. What is the maximum average forward rectified current at 155 °C?
    The maximum average forward rectified current at 155 °C is 1.0 A.
  3. What is the reverse recovery time of the MURS120HE3_A/H?
    The reverse recovery time is 25 ns (IF = 0.5 A, IR = 1.0 A) and 35 ns (IF = 1.0 A, dI/dt = 50 A/μs).
  4. Is the MURS120HE3_A/H AEC-Q101 qualified?
    Yes, the MURS120HE3_A/H is AEC-Q101 qualified, making it suitable for automotive applications.
  5. What is the operating junction and storage temperature range of the MURS120HE3_A/H?
    The operating junction and storage temperature range is -65 to +175 °C.
  6. What is the package type of the MURS120HE3_A/H?
    The package type is SMB (DO-214AA).
  7. What is the forward voltage of the MURS120HE3_A/H?
    The forward voltage is 0.71 V.
  8. Is the MURS120HE3_A/H RoHS-compliant?
    Yes, the MURS120HE3_A/H is RoHS-compliant.
  9. What are the typical applications of the MURS120HE3_A/H?
    The typical applications include high-frequency rectification and freewheeling in switching mode converters and inverters for consumer, computer, and telecommunication systems.
  10. What is the peak forward surge current of the MURS120HE3_A/H?
    The peak forward surge current is 40 A.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number MURS120HE3_A/H MURS160HE3_A/H MURS140HE3_A/H MURS120HE3_A/I MURS320HE3_A/H
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 400 V 200 V 200 V
Current - Average Rectified (Io) 2A 2A 2A 2A 3A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 600 V 5 µA @ 400 V 2 µA @ 200 V 5 µA @ 200 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AB, SMC
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AB (SMC)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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