MURS120HE3/5BT
  • Share:

Vishay General Semiconductor - Diodes Division MURS120HE3/5BT

Manufacturer No:
MURS120HE3/5BT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS120HE3/5BT is a surface-mount ultrafast plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is particularly suited for use in consumer, computer, and telecommunication systems. The diode features a glass passivated pellet chip junction and is ideal for automated placement, making it a reliable choice for various electronic designs.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current IFSM 40 A
Maximum Instantaneous Forward Voltage VF 0.875 V
Reverse Recovery Time trr 25 ns ns
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package SMB (DO-214AA)

Key Features

  • Glass passivated pellet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified (for automotive applications)
  • RoHS-compliant
  • Molding compound meets UL 94 V-0 flammability rating

Applications

The MURS120HE3/5BT is typically used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is suitable for various sectors including consumer electronics, computer systems, and telecommunication equipment.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS120HE3/5BT?

    The maximum repetitive peak reverse voltage is 200 V.

  2. What is the maximum average forward rectified current of the MURS120HE3/5BT?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current of the MURS120HE3/5BT?

    The peak forward surge current is 40 A.

  4. What is the reverse recovery time of the MURS120HE3/5BT?

    The reverse recovery time is 25 ns.

  5. Is the MURS120HE3/5BT RoHS-compliant?

    Yes, the MURS120HE3/5BT is RoHS-compliant.

  6. What is the operating junction and storage temperature range of the MURS120HE3/5BT?

    The operating junction and storage temperature range is -65 to +175 °C.

  7. What package type does the MURS120HE3/5BT use?

    The package type is SMB (DO-214AA).

  8. Is the MURS120HE3/5BT AEC-Q101 qualified?

    Yes, the MURS120HE3/5BT is AEC-Q101 qualified for automotive applications.

  9. What are the typical applications of the MURS120HE3/5BT?

    The typical applications include high-frequency rectification and freewheeling in switching mode converters and inverters for consumer, computer, and telecommunication systems.

  10. Does the MURS120HE3/5BT meet any specific flammability ratings?

    Yes, the molding compound meets UL 94 V-0 flammability rating.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
191

Please send RFQ , we will respond immediately.

Same Series
MURS120-E3/52T
MURS120-E3/52T
DIODE GP 200V 1A DO214AA
MURS120-E3/5BT
MURS120-E3/5BT
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3_A/H
MURS120HE3_A/H
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3_A/I
MURS120HE3_A/I
DIODE GEN PURP 200V 2A DO214AA
MURS120/2
MURS120/2
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3/5BT
MURS120HE3/5BT
DIODE GEN PURP 200V 2A DO214AA

Similar Products

Part Number MURS120HE3/5BT MURS140HE3/5BT MURS160HE3/5BT MURS120-E3/5BT MURS120HE3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Active Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V 200 V
Current - Average Rectified (Io) 2A 2A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 2 µA @ 200 V 2 µA @ 200 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

SM15T30A-E3/9AT
SM15T30A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM6T150AHM3_A/H
SM6T150AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T6V8CAHM3_A/H
SM6T6V8CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM15T22AHM3_A/H
SM15T22AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T24AHE3_A/H
SM15T24AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
LL4148-M-18
LL4148-M-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 300MA SOD80
1N4007GPHE3/54
1N4007GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
1N4002GPE-E3/91
1N4002GPE-E3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
BZX384B24-G3-18
BZX384B24-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 200MW SOD323
BZX384B3V0-HE3-08
BZX384B3V0-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323
BZX84B4V7-G3-18
BZX84B4V7-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3
BZX384B10-G3-18
BZX384B10-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 200MW SOD323