MURS120-E3/5BT
  • Share:

Vishay General Semiconductor - Diodes Division MURS120-E3/5BT

Manufacturer No:
MURS120-E3/5BT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS120-E3/5BT is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It features a glass passivated pellet chip junction, making it ideal for automated placement and high-efficiency operations.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 40 A
Maximum Instantaneous Forward Voltage VF 0.71 V
Maximum Reverse Recovery Time trr 25 ns
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package Type SMB (DO-214AA)

Key Features

  • Glass passivated pellet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified available (Automotive ordering code: base P/NHE3)
  • RoHS-compliant, commercial grade
  • Molding compound meets UL 94 V-0 flammability rating

Applications

The MURS120-E3/5BT is typically used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. These applications include:

  • Consumer electronics
  • Computer systems
  • Telecommunication equipment

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS120-E3/5BT?

    The maximum repetitive peak reverse voltage is 200 V.

  2. What is the maximum average forward rectified current of the MURS120-E3/5BT?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current of the MURS120-E3/5BT?

    The peak forward surge current is 40 A for an 8.3 ms single half sine-wave.

  4. What is the maximum instantaneous forward voltage of the MURS120-E3/5BT?

    The maximum instantaneous forward voltage is 0.71 V.

  5. What is the maximum reverse recovery time of the MURS120-E3/5BT?

    The maximum reverse recovery time is 25 ns.

  6. What is the operating junction and storage temperature range of the MURS120-E3/5BT?

    The operating junction and storage temperature range is -65 to +175 °C.

  7. Is the MURS120-E3/5BT RoHS-compliant?
  8. Is the MURS120-E3/5BT AEC-Q101 qualified?
  9. What type of package does the MURS120-E3/5BT use?

    The MURS120-E3/5BT uses an SMB (DO-214AA) package.

  10. What are the typical applications of the MURS120-E3/5BT?

    The MURS120-E3/5BT is typically used in high-frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication equipment.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.47
715

Please send RFQ , we will respond immediately.

Same Series
MURS120-E3/52T
MURS120-E3/52T
DIODE GP 200V 1A DO214AA
MURS120-E3/5BT
MURS120-E3/5BT
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3_A/H
MURS120HE3_A/H
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3_A/I
MURS120HE3_A/I
DIODE GEN PURP 200V 2A DO214AA
MURS120/2
MURS120/2
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3/5BT
MURS120HE3/5BT
DIODE GEN PURP 200V 2A DO214AA

Similar Products

Part Number MURS120-E3/5BT MURS160-E3/5BT MURS140-E3/5BT MURS120-M3/5BT MURS120HE3/5BT MURS120-E3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Discontinued at Digi-Key Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 400 V 200 V 200 V 200 V
Current - Average Rectified (Io) 2A 2A 2A 1A 2A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 600 V 5 µA @ 400 V 2 µA @ 200 V 2 µA @ 200 V 2 µA @ 200 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SM6T24CA-E3/52
SM6T24CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
SM15T27A-E3/57T
SM15T27A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AB
SM6T200CA-M3/52
SM6T200CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AA
SM6T12AHE3_A/I
SM6T12AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T100CAHE3_A/I
SM6T100CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AA
SM6T220CAHE3/5B
SM6T220CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BAT42W-G3-18
BAT42W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPS1045BTRL
STPS1045BTRL
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 10A DPAK
BZX384C8V2-G3-18
BZX384C8V2-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 200MW SOD323
BZX84B4V7-G3-08
BZX84B4V7-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3
BZX384B11-G3-18
BZX384B11-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323