MURS120-E3/5BT
  • Share:

Vishay General Semiconductor - Diodes Division MURS120-E3/5BT

Manufacturer No:
MURS120-E3/5BT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS120-E3/5BT is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It features a glass passivated pellet chip junction, making it ideal for automated placement and high-efficiency operations.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 40 A
Maximum Instantaneous Forward Voltage VF 0.71 V
Maximum Reverse Recovery Time trr 25 ns
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package Type SMB (DO-214AA)

Key Features

  • Glass passivated pellet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified available (Automotive ordering code: base P/NHE3)
  • RoHS-compliant, commercial grade
  • Molding compound meets UL 94 V-0 flammability rating

Applications

The MURS120-E3/5BT is typically used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. These applications include:

  • Consumer electronics
  • Computer systems
  • Telecommunication equipment

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS120-E3/5BT?

    The maximum repetitive peak reverse voltage is 200 V.

  2. What is the maximum average forward rectified current of the MURS120-E3/5BT?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current of the MURS120-E3/5BT?

    The peak forward surge current is 40 A for an 8.3 ms single half sine-wave.

  4. What is the maximum instantaneous forward voltage of the MURS120-E3/5BT?

    The maximum instantaneous forward voltage is 0.71 V.

  5. What is the maximum reverse recovery time of the MURS120-E3/5BT?

    The maximum reverse recovery time is 25 ns.

  6. What is the operating junction and storage temperature range of the MURS120-E3/5BT?

    The operating junction and storage temperature range is -65 to +175 °C.

  7. Is the MURS120-E3/5BT RoHS-compliant?
  8. Is the MURS120-E3/5BT AEC-Q101 qualified?
  9. What type of package does the MURS120-E3/5BT use?

    The MURS120-E3/5BT uses an SMB (DO-214AA) package.

  10. What are the typical applications of the MURS120-E3/5BT?

    The MURS120-E3/5BT is typically used in high-frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication equipment.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.47
715

Please send RFQ , we will respond immediately.

Same Series
MURS120-E3/52T
MURS120-E3/52T
DIODE GP 200V 1A DO214AA
MURS120-E3/5BT
MURS120-E3/5BT
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3_A/H
MURS120HE3_A/H
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3_A/I
MURS120HE3_A/I
DIODE GEN PURP 200V 2A DO214AA
MURS120/2
MURS120/2
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3/5BT
MURS120HE3/5BT
DIODE GEN PURP 200V 2A DO214AA

Similar Products

Part Number MURS120-E3/5BT MURS160-E3/5BT MURS140-E3/5BT MURS120-M3/5BT MURS120HE3/5BT MURS120-E3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Discontinued at Digi-Key Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 400 V 200 V 200 V 200 V
Current - Average Rectified (Io) 2A 2A 2A 1A 2A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 600 V 5 µA @ 400 V 2 µA @ 200 V 2 µA @ 200 V 2 µA @ 200 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

SMA6J5.0A-E3/61
SMA6J5.0A-E3/61
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 13.4VC DO214AC
SM6T33A-M3/5B
SM6T33A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T18CAHE3_A/I
SM6T18CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
1.5KE6.8A-E3/73
1.5KE6.8A-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
1.5KE6.8A-E3/51
1.5KE6.8A-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM6T7V5CAHE3_A/I
SM6T7V5CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA
SM15T6V8AHM3/H
SM15T6V8AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
BAS16D-E3-08
BAS16D-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
1N5406GP-E3/54
1N5406GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
BZX384B7V5-HE3-08
BZX384B7V5-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 200MW SOD323
BZX84B3V3-HE3-08
BZX84B3V3-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3