MURS120-E3/5BT
  • Share:

Vishay General Semiconductor - Diodes Division MURS120-E3/5BT

Manufacturer No:
MURS120-E3/5BT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS120-E3/5BT is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It features a glass passivated pellet chip junction, making it ideal for automated placement and high-efficiency operations.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 40 A
Maximum Instantaneous Forward Voltage VF 0.71 V
Maximum Reverse Recovery Time trr 25 ns
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package Type SMB (DO-214AA)

Key Features

  • Glass passivated pellet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified available (Automotive ordering code: base P/NHE3)
  • RoHS-compliant, commercial grade
  • Molding compound meets UL 94 V-0 flammability rating

Applications

The MURS120-E3/5BT is typically used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. These applications include:

  • Consumer electronics
  • Computer systems
  • Telecommunication equipment

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS120-E3/5BT?

    The maximum repetitive peak reverse voltage is 200 V.

  2. What is the maximum average forward rectified current of the MURS120-E3/5BT?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current of the MURS120-E3/5BT?

    The peak forward surge current is 40 A for an 8.3 ms single half sine-wave.

  4. What is the maximum instantaneous forward voltage of the MURS120-E3/5BT?

    The maximum instantaneous forward voltage is 0.71 V.

  5. What is the maximum reverse recovery time of the MURS120-E3/5BT?

    The maximum reverse recovery time is 25 ns.

  6. What is the operating junction and storage temperature range of the MURS120-E3/5BT?

    The operating junction and storage temperature range is -65 to +175 °C.

  7. Is the MURS120-E3/5BT RoHS-compliant?
  8. Is the MURS120-E3/5BT AEC-Q101 qualified?
  9. What type of package does the MURS120-E3/5BT use?

    The MURS120-E3/5BT uses an SMB (DO-214AA) package.

  10. What are the typical applications of the MURS120-E3/5BT?

    The MURS120-E3/5BT is typically used in high-frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication equipment.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.47
715

Please send RFQ , we will respond immediately.

Same Series
MURS120-E3/52T
MURS120-E3/52T
DIODE GP 200V 1A DO214AA
MURS120-E3/5BT
MURS120-E3/5BT
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3_A/H
MURS120HE3_A/H
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3_A/I
MURS120HE3_A/I
DIODE GEN PURP 200V 2A DO214AA
MURS120/2
MURS120/2
DIODE GEN PURP 200V 2A DO214AA
MURS120HE3/5BT
MURS120HE3/5BT
DIODE GEN PURP 200V 2A DO214AA

Similar Products

Part Number MURS120-E3/5BT MURS160-E3/5BT MURS140-E3/5BT MURS120-M3/5BT MURS120HE3/5BT MURS120-E3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Discontinued at Digi-Key Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 400 V 200 V 200 V 200 V
Current - Average Rectified (Io) 2A 2A 2A 1A 2A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 600 V 5 µA @ 400 V 2 µA @ 200 V 2 µA @ 200 V 2 µA @ 200 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

SM6T15A-E3/52
SM6T15A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T22AHM3_A/H
SM6T22AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM15T36AHM3_A/H
SM15T36AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T150CAHE3_A/H
SM15T150CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AB
SM15T68CAHM3/I
SM15T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T68AHM3/H
SM6T68AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
BAS70-06-HE3-08
BAS70-06-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BAW56-E3-08
BAW56-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 250MA SOT23
BYQ28EB-200HE3_A/P
BYQ28EB-200HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
BAT43WS-E3-08
BAT43WS-E3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
BZX384B15-HE3-08
BZX384B15-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323
BZX384B12-E3-18
BZX384B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 200MW SOD323