MURS120-M3/5BT
  • Share:

Vishay General Semiconductor - Diodes Division MURS120-M3/5BT

Manufacturer No:
MURS120-M3/5BT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 1A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS120-M3/5BT is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It features a glass passivated pellet chip junction, making it ideal for automated placement and high-efficiency operations.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A (TL = 155 °C), 2.0 A (TL = 145 °C) A
Peak Forward Surge Current IFSM 40 A A
Reverse Recovery Time trr 25 ns (IF = 0.5 A, IR = 1.0 A), 35 ns (IF = 1.0 A, dI/dt = 50 A/μs) ns
Forward Voltage Drop VF 0.71 V (TJ = 150 °C), 0.875 V (TJ = 25 °C) V
Maximum Junction Temperature TJ max. 175 °C °C
Package Type - SMB (DO-214AA) -
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C °C

Key Features

  • Glass Passivated Pellet Chip Junction: Ensures high reliability and performance.
  • Ultrafast Reverse Recovery Time: Reduces switching losses and increases efficiency.
  • Low Switching Losses: High efficiency in switching applications.
  • High Forward Surge Capability: Handles high surge currents effectively.
  • Halogen-Free, RoHS-Compliant: Meets environmental standards.
  • Automated Placement Friendly: Ideal for automated assembly processes.
  • Meets MSL Level 1, per J-STD-020: Compatible with high-temperature soldering processes.

Applications

The MURS120-M3/5BT is suitable for high-frequency rectification and freewheeling applications in:

  • Switching mode converters
  • Inverters for consumer electronics
  • Computer and telecommunication systems

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS120-M3/5BT?

    200 V

  2. What is the maximum average forward rectified current at TL = 155 °C?

    1.0 A

  3. What is the peak forward surge current rating?

    40 A

  4. What is the typical reverse recovery time?

    25 ns (IF = 0.5 A, IR = 1.0 A), 35 ns (IF = 1.0 A, dI/dt = 50 A/μs)

  5. What is the maximum junction temperature?

    175 °C

  6. What type of package does the MURS120-M3/5BT use?

    SMB (DO-214AA)

  7. Is the MURS120-M3/5BT RoHS-compliant?
  8. What are the typical applications of the MURS120-M3/5BT?

    High-frequency rectification and freewheeling in switching mode converters and inverters for consumer, computer, and telecommunication systems.

  9. What is the operating junction and storage temperature range?

    -65 to +175 °C

  10. Does the MURS120-M3/5BT meet MSL Level 1, per J-STD-020?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.14
3,446

Please send RFQ , we will respond immediately.

Same Series
MURS120-M3/52T
MURS120-M3/52T
DIODE GEN PURP 200V 1A DO214AA

Similar Products

Part Number MURS120-M3/5BT MURS160-M3/5BT MURS140-M3/5BT MURS120-E3/5BT MURS120-M3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 400 V 200 V 200 V
Current - Average Rectified (Io) 1A 1A 1A 2A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 600 V 5 µA @ 400 V 2 µA @ 200 V 2 µA @ 200 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SM6T220CA-E3/52
SM6T220CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T68A-M3/52
SM6T68A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T30CA-E3/5B
SM6T30CA-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM6T39CAHE3_A/H
SM6T39CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T36AHM3_A/H
SM15T36AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T200AHE3/57T
SM15T200AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
MUR420-E3/73
MUR420-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 4A DO201AD
BAS20-E3-08
BAS20-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
MUR160-E3/73
MUR160-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
BZX84C22-E3-18
BZX84C22-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX84C62-E3-18
BZX84C62-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX384C20-E3-18
BZX384C20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 20V 200MW SOD323