MURS120-M3/52T
  • Share:

Vishay General Semiconductor - Diodes Division MURS120-M3/52T

Manufacturer No:
MURS120-M3/52T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 1A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS120-M3/52T is a high-performance rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the MURS120 series and is designed for use in various high-frequency applications. It features a glass passivated pellet chip junction and is ideal for automated placement, making it suitable for modern manufacturing processes. The diode is known for its ultrafast reverse recovery time, low switching losses, and high efficiency, which are critical for applications requiring high-speed rectification.

Key Specifications

Product Category Rectifiers
Package / Case DO-214AA-2 (SMB)
Vr - Reverse Voltage 200 V
If - Forward Current 1 A
Type Fast Recovery Rectifiers
Configuration Single
Vf - Forward Voltage 875 mV
Max Surge Current 40 A
Recovery Time 35 ns
Minimum Operating Temperature -65 °C
Maximum Operating Temperature +175 °C
Brand Vishay General Semiconductor
Height 2.44 mm
Length 4.57 mm
Factory Pack Quantity 750

Key Features

  • Glass passivated pellet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3

Applications

The MURS120-M3/52T is designed for use in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is suitable for various industries including consumer electronics, computer systems, and telecommunications.

Q & A

  1. What is the reverse voltage rating of the MURS120-M3/52T diode?

    The reverse voltage rating is 200 V.

  2. What is the forward current rating of the MURS120-M3/52T diode?

    The forward current rating is 1 A.

  3. What is the recovery time of the MURS120-M3/52T diode?

    The recovery time is 35 ns.

  4. What is the maximum operating temperature of the MURS120-M3/52T diode?

    The maximum operating temperature is +175 °C.

  5. Is the MURS120-M3/52T diode AEC-Q101 qualified?
  6. What is the package type of the MURS120-M3/52T diode?

    The package type is DO-214AA-2 (SMB).

  7. What are the typical applications of the MURS120-M3/52T diode?

    It is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication systems.

  8. What is the forward voltage drop of the MURS120-M3/52T diode?

    The forward voltage drop is 875 mV at 1 A.

  9. Does the MURS120-M3/52T diode meet any specific moisture sensitivity levels?
  10. What is the maximum surge current rating of the MURS120-M3/52T diode?

    The maximum surge current rating is 40 A.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.53
289

Please send RFQ , we will respond immediately.

Same Series
MURS120-M3/52T
MURS120-M3/52T
DIODE GEN PURP 200V 1A DO214AA

Similar Products

Part Number MURS120-M3/52T MURS160-M3/52T MURS140-M3/52T MURS120-M3/5BT MURS120-E3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 400 V 200 V 200 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 75 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 600 V 5 µA @ 400 V 2 µA @ 200 V 2 µA @ 200 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

SM6T12A-E3/5B
SM6T12A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T12AHE3_A/I
SM6T12AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T39CAHE3_A/I
SM6T39CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T15CAHE3/5B
SM6T15CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T68AHE3/52
SM6T68AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM15T68CAHM3/H
SM15T68CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T22CAHM3/H
SM6T22CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
LL4148-M-08
LL4148-M-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 300MA SOD80
BAV21W-HE3-08
BAV21W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
1N4007GPHM3/73
1N4007GPHM3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX84C13-G3-08
BZX84C13-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 300MW SOT23-3
BZX384B11-G3-18
BZX384B11-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323