MURS120-E3/52T
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Vishay General Semiconductor - Diodes Division MURS120-E3/52T

Manufacturer No:
MURS120-E3/52T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GP 200V 1A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS120-E3/52T is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is particularly suited for use in consumer, computer, and telecommunication systems due to its high efficiency and low switching losses.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 200 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 40 A
Maximum Instantaneous Forward Voltage VF 0.71 V
Maximum Reverse Recovery Time trr 25 ns ns
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package Type SMB (DO-214AA)

Key Features

  • Glass passivated pellet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified available (Automotive ordering code: base P/NHE3)
  • RoHS-compliant, commercial grade
  • Molding compound meets UL 94 V-0 flammability rating

Applications

The MURS120-E3/52T is typically used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. It is suitable for various sectors including consumer, computer, and telecommunication systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS120-E3/52T?

    The maximum repetitive peak reverse voltage is 200 V.

  2. What is the maximum average forward rectified current of the MURS120-E3/52T?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current of the MURS120-E3/52T?

    The peak forward surge current is 40 A for an 8.3 ms single half sine-wave.

  4. What is the maximum instantaneous forward voltage of the MURS120-E3/52T?

    The maximum instantaneous forward voltage is 0.71 V.

  5. What is the maximum reverse recovery time of the MURS120-E3/52T?

    The maximum reverse recovery time is 25 ns.

  6. What is the operating junction and storage temperature range of the MURS120-E3/52T?

    The operating junction and storage temperature range is -65 to +175 °C.

  7. Is the MURS120-E3/52T RoHS-compliant?
  8. Is the MURS120-E3/52T AEC-Q101 qualified?
  9. What package type does the MURS120-E3/52T use?

    The MURS120-E3/52T uses the SMB (DO-214AA) package type.

  10. What are the typical applications of the MURS120-E3/52T?

    The MURS120-E3/52T is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters, particularly in consumer, computer, and telecommunication systems.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number MURS120-E3/52T MURS160-E3/52T MURS120-E3/5BT MURS140-E3/52T MURS120-M3/52T MURS120HE3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 200 V 400 V 200 V 200 V
Current - Average Rectified (Io) 1A 2A 2A 2A 1A 2A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 1.25 V @ 1 A 875 mV @ 1 A 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 35 ns 75 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 600 V 2 µA @ 200 V 5 µA @ 400 V 2 µA @ 200 V 2 µA @ 200 V
Capacitance @ Vr, F - 10pF @ 4V, 1MHz - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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