SURA8260T3G
  • Share:

onsemi SURA8260T3G

Manufacturer No:
SURA8260T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SURA8260T3G is a surface mount ultrafast power rectifier produced by ON Semiconductor. This component is designed for high voltage, high frequency rectification and is ideal for use as free-wheeling and protection diodes in surface mount applications where compact size and weight are critical. The rectifier features a small, compact surface mountable package with J-bend leads, making it suitable for automated handling and integration into various electronic systems.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 600 V
Average Rectified Forward Current @ TL = 145°C IF(AV) 1.0 A
Average Rectified Forward Current @ TL = 110°C IF(AV) 2.0 A
Non-Repetitive Peak Surge Current IFSM 30 A
Operating Junction Temperature Range TJ −65 to +175 °C
Maximum Instantaneous Forward Voltage @ 2.0 A, TJ = 25°C vF 1.45 V
Maximum Instantaneous Forward Voltage @ 2.0 A, TJ = 150°C vF 1.20 V
Maximum Reverse Recovery Time trr 75 ns
Thermal Resistance, Junction-to-Lead PsiJL 24 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 216 °C/W

Key Features

  • Small Compact Surface Mountable Package with J-bend Leads
  • Rectangular Package for Automated Handling
  • High Temperature Glass Passivated Junction
  • Low Forward Voltage Drop (1.2 V Max @ 2.0 A, TJ = 150°C)
  • AEC-Q101 Qualified and PPAP Capable
  • SURA8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • All Packages are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
  • ESD Protection: Human Body Model > 4000 V (Class 3), Charged Device Model > 1000 V
  • Corrosion Resistant and Readily Solderable Terminal Leads

Applications

The SURA8260T3G is ideally suited for various applications including:

  • High voltage, high frequency rectification
  • Free-wheeling diodes in surface mount applications
  • Protection diodes in compact electronic systems
  • Automotive applications requiring AEC-Q101 qualification
  • General-purpose rectification in power supplies and DC-DC converters

Q & A

  1. What is the peak repetitive reverse voltage of the SURA8260T3G?

    The peak repetitive reverse voltage (VRRM) is 600 V.

  2. What is the average rectified forward current at TL = 145°C and TL = 110°C?

    The average rectified forward current is 1.0 A at TL = 145°C and 2.0 A at TL = 110°C.

  3. What is the maximum non-repetitive peak surge current?

    The maximum non-repetitive peak surge current (IFSM) is 30 A.

  4. What is the operating junction temperature range?

    The operating junction temperature range is −65 to +175°C.

  5. What is the maximum instantaneous forward voltage at 2.0 A and TJ = 150°C?

    The maximum instantaneous forward voltage is 1.20 V at 2.0 A and TJ = 150°C.

  6. What is the maximum reverse recovery time?

    The maximum reverse recovery time (trr) is 75 ns.

  7. Is the SURA8260T3G Pb-Free and RoHS compliant?
  8. What kind of ESD protection does the SURA8260T3G offer?

    The SURA8260T3G offers ESD protection with a Human Body Model > 4000 V (Class 3) and Charged Device Model > 1000 V.

  9. What are the thermal resistance values for the SURA8260T3G?

    The thermal resistance, junction-to-lead (PsiJL), is 24°C/W, and the thermal resistance, junction-to-ambient (RθJA), is 216°C/W.

  10. Is the SURA8260T3G suitable for automotive applications?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.51
246

Please send RFQ , we will respond immediately.

Same Series
SURA8260T3G
SURA8260T3G
DIODE GEN PURP 600V 2A SMA
MURA260T3
MURA260T3
DIODE GEN PURP 600V 2A SMA

Similar Products

Part Number SURA8260T3G SURS8260T3G SURA8160T3G SURA8210T3G SURA8220T3G SURA8240T3G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 100 V 200 V 400 V
Current - Average Rectified (Io) 2A 2A 1A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 2 A 1.45 V @ 2 A 1.25 V @ 1 A 940 mV @ 2 A 950 mV @ 2 A 1.3 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 30 ns 35 ns 65 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 2 µA @ 100 V 2 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AA, SMB DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMB SMA SMA SMA SMA
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD