MURS115T3G
  • Share:

onsemi MURS115T3G

Manufacturer No:
MURS115T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 150V 2A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS115T3G is a high-performance, ultra-fast recovery rectifier diode produced by onsemi. This component is designed for high voltage, high frequency rectification and is suitable for use as free-wheeling and protection diodes in surface mount applications. The MURS115T3G features a compact SMB (Small Outline Molded) package with J-bend leads, making it ideal for systems where space and weight are critical.

Key Specifications

Parameter Symbol Unit Value
Peak Repetitive Reverse Voltage VRRM V 150
Working Peak Reverse Voltage VRWM V 150
DC Blocking Voltage VR V 150
Continuous Forward Current IF(DC) A 1.0 @ TL = 159°C
Non-Repetitive Peak Surge Current IFSM A 35
Operating Junction Temperature TJ °C -65 to +175
Maximum Instantaneous Forward Voltage vF V 0.71 to 1.05 @ 1.0 A, TJ = 150°C
Maximum Reverse Recovery Time trr ns 35 to 75
Thermal Resistance Junction-to-Lead RθJL °C/W 13

Key Features

  • Small compact surface mountable package with J-bend leads.
  • Rectangular package for automated handling.
  • High temperature glass passivated junction.
  • Low forward voltage drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C).
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free and RoHS compliant.
  • Corrosion-resistant external surfaces and readily solderable terminal leads.
  • ESD rating: Human Body Model > 8 kV, Charged Device Model > 1000 V.

Applications

The MURS115T3G is ideally suited for high voltage, high frequency rectification applications. It can be used as free-wheeling and protection diodes in various systems, including:

  • Automotive systems requiring AEC-Q101 qualification.
  • Surface mount applications where compact size and weight are critical.
  • High-frequency switching circuits.
  • Power supplies and DC-DC converters.

Q & A

  1. What is the peak repetitive reverse voltage of the MURS115T3G?

    The peak repetitive reverse voltage (VRRM) of the MURS115T3G is 150 V.

  2. What is the maximum continuous forward current of the MURS115T3G?

    The maximum continuous forward current (IF(DC)) of the MURS115T3G is 1.0 A at a lead temperature (TL) of 159°C.

  3. What is the operating junction temperature range of the MURS115T3G?

    The operating junction temperature (TJ) range of the MURS115T3G is -65°C to +175°C.

  4. Is the MURS115T3G Pb-free and RoHS compliant?
  5. What is the thermal resistance junction-to-lead of the MURS115T3G?

    The thermal resistance junction-to-lead (RθJL) of the MURS115T3G is 13°C/W.

  6. What are the ESD ratings of the MURS115T3G?

    The ESD ratings of the MURS115T3G are Human Body Model > 8 kV and Charged Device Model > 1000 V.

  7. Is the MURS115T3G suitable for automotive applications?
  8. What is the maximum forward voltage drop of the MURS115T3G?

    The maximum forward voltage drop (vF) of the MURS115T3G is 0.71 to 1.05 V at 1.0 A and a junction temperature (TJ) of 150°C.

  9. What is the maximum reverse recovery time of the MURS115T3G?

    The maximum reverse recovery time (trr) of the MURS115T3G is 35 to 75 ns.

  10. What package type does the MURS115T3G come in?

    The MURS115T3G comes in a small outline molded (SMB) package with J-bend leads.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 150 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.52
1,899

Please send RFQ , we will respond immediately.

Same Series
MURS120T3G
MURS120T3G
DIODE GEN PURP 200V 1A SMB
MURS160T3G
MURS160T3G
DIODE GEN PURP 600V 1A SMB
MURS110T3G
MURS110T3G
DIODE GEN PURP 100V 1A SMB
NRVUS120VT3G
NRVUS120VT3G
DIODE GEN PURP 200V 2A SMB
MURS115T3G
MURS115T3G
DIODE GEN PURP 150V 2A SMB
SURS8140T3G-VF01
SURS8140T3G-VF01
DIODE GEN PURP 400V 1A SMB
NRVUS110VT3G
NRVUS110VT3G
DIODE GEN PURP 100V 2A SMB
NRVUS160VT3G
NRVUS160VT3G
DIODE GEN PURP 600V 2A SMB
MURS105T3
MURS105T3
DIODE GEN PURP 50V 2A SMB
SURS8160T3G
SURS8160T3G
DIODE GEN PURP 600V 1A SMB
SURS8120T3G
SURS8120T3G
DIODE GEN PURP 200V 1A SMB
SURS8120T3G-IR01
SURS8120T3G-IR01
DIODE GP ULT FAST 200V 1A SMB

Similar Products

Part Number MURS115T3G MURA115T3G MURS105T3G MURS110T3G MURS115T3
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 150 V 150 V 50 V 100 V 150 V
Current - Average Rectified (Io) 2A 1A (DC) 1A 1A 2A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 150 V 2 µA @ 150 V 2 µA @ 50 V 2 µA @ 100 V 2 µA @ 150 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AC, SMA DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package SMB SMA SMB SMB SMB
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -

Related Product By Categories

MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC