MURS115T3G
  • Share:

onsemi MURS115T3G

Manufacturer No:
MURS115T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 150V 2A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS115T3G is a high-performance, ultra-fast recovery rectifier diode produced by onsemi. This component is designed for high voltage, high frequency rectification and is suitable for use as free-wheeling and protection diodes in surface mount applications. The MURS115T3G features a compact SMB (Small Outline Molded) package with J-bend leads, making it ideal for systems where space and weight are critical.

Key Specifications

Parameter Symbol Unit Value
Peak Repetitive Reverse Voltage VRRM V 150
Working Peak Reverse Voltage VRWM V 150
DC Blocking Voltage VR V 150
Continuous Forward Current IF(DC) A 1.0 @ TL = 159°C
Non-Repetitive Peak Surge Current IFSM A 35
Operating Junction Temperature TJ °C -65 to +175
Maximum Instantaneous Forward Voltage vF V 0.71 to 1.05 @ 1.0 A, TJ = 150°C
Maximum Reverse Recovery Time trr ns 35 to 75
Thermal Resistance Junction-to-Lead RθJL °C/W 13

Key Features

  • Small compact surface mountable package with J-bend leads.
  • Rectangular package for automated handling.
  • High temperature glass passivated junction.
  • Low forward voltage drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C).
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free and RoHS compliant.
  • Corrosion-resistant external surfaces and readily solderable terminal leads.
  • ESD rating: Human Body Model > 8 kV, Charged Device Model > 1000 V.

Applications

The MURS115T3G is ideally suited for high voltage, high frequency rectification applications. It can be used as free-wheeling and protection diodes in various systems, including:

  • Automotive systems requiring AEC-Q101 qualification.
  • Surface mount applications where compact size and weight are critical.
  • High-frequency switching circuits.
  • Power supplies and DC-DC converters.

Q & A

  1. What is the peak repetitive reverse voltage of the MURS115T3G?

    The peak repetitive reverse voltage (VRRM) of the MURS115T3G is 150 V.

  2. What is the maximum continuous forward current of the MURS115T3G?

    The maximum continuous forward current (IF(DC)) of the MURS115T3G is 1.0 A at a lead temperature (TL) of 159°C.

  3. What is the operating junction temperature range of the MURS115T3G?

    The operating junction temperature (TJ) range of the MURS115T3G is -65°C to +175°C.

  4. Is the MURS115T3G Pb-free and RoHS compliant?
  5. What is the thermal resistance junction-to-lead of the MURS115T3G?

    The thermal resistance junction-to-lead (RθJL) of the MURS115T3G is 13°C/W.

  6. What are the ESD ratings of the MURS115T3G?

    The ESD ratings of the MURS115T3G are Human Body Model > 8 kV and Charged Device Model > 1000 V.

  7. Is the MURS115T3G suitable for automotive applications?
  8. What is the maximum forward voltage drop of the MURS115T3G?

    The maximum forward voltage drop (vF) of the MURS115T3G is 0.71 to 1.05 V at 1.0 A and a junction temperature (TJ) of 150°C.

  9. What is the maximum reverse recovery time of the MURS115T3G?

    The maximum reverse recovery time (trr) of the MURS115T3G is 35 to 75 ns.

  10. What package type does the MURS115T3G come in?

    The MURS115T3G comes in a small outline molded (SMB) package with J-bend leads.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 150 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.52
1,899

Please send RFQ , we will respond immediately.

Same Series
MURS120T3G
MURS120T3G
DIODE GEN PURP 200V 1A SMB
MURS160T3G
MURS160T3G
DIODE GEN PURP 600V 1A SMB
MURS105T3G
MURS105T3G
DIODE GEN PURP 50V 1A SMB
NRVUS120VT3G
NRVUS120VT3G
DIODE GEN PURP 200V 2A SMB
MURS115T3G
MURS115T3G
DIODE GEN PURP 150V 2A SMB
SURS8140T3G-VF01
SURS8140T3G-VF01
DIODE GEN PURP 400V 1A SMB
NRVUS110VT3G
NRVUS110VT3G
DIODE GEN PURP 100V 2A SMB
NRVUS160VT3G
NRVUS160VT3G
DIODE GEN PURP 600V 2A SMB
MURS105T3
MURS105T3
DIODE GEN PURP 50V 2A SMB
SURS8160T3G
SURS8160T3G
DIODE GEN PURP 600V 1A SMB
SURS8120T3G
SURS8120T3G
DIODE GEN PURP 200V 1A SMB
SURS8120T3G-IR01
SURS8120T3G-IR01
DIODE GP ULT FAST 200V 1A SMB

Similar Products

Part Number MURS115T3G MURA115T3G MURS105T3G MURS110T3G MURS115T3
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 150 V 150 V 50 V 100 V 150 V
Current - Average Rectified (Io) 2A 1A (DC) 1A 1A 2A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 150 V 2 µA @ 150 V 2 µA @ 50 V 2 µA @ 100 V 2 µA @ 150 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AC, SMA DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package SMB SMA SMB SMB SMB
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP