MBR20H100CTG-E3/45
  • Share:

Vishay General Semiconductor - Diodes Division MBR20H100CTG-E3/45

Manufacturer No:
MBR20H100CTG-E3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 100V TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR20H100CTG-E3/45 is a high-performance Schottky barrier rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-efficiency and low-power loss applications, making it an excellent choice for various power management and rectification needs. The device features a dual common cathode configuration, packaged in a TO-220AB case, which is widely used in industrial and automotive applications.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum Average Forward Rectified Current (Total Device) IF(AV) 20 A
Maximum Average Forward Rectified Current (Per Diode) IF(AV) 10 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 150 A
Maximum Instantaneous Forward Voltage (IF = 10 A, TC = 25°C) VF 0.77 V
Maximum Instantaneous Forward Voltage (IF = 10 A, TC = 125°C) VF 0.64 V
Maximum Reverse Current (TJ = 25°C) IR 3.5 μA
Maximum Reverse Current (TJ = 125°C) IR 4.5 mA
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Typical Thermal Resistance per Diode RθJC 2.0 °C/W
Package TO-220AB

Key Features

  • Low Forward Voltage: The MBR20H100CTG-E3/45 features a low forward voltage drop, typically 0.64 V at 10 A and 125°C, ensuring high efficiency and low power loss.
  • High Surge Capacity: The device can handle peak forward surge currents up to 150 A for 8.3 ms, making it robust for high surge applications.
  • High Operating Junction Temperature: With an operating junction temperature range of -65°C to +175°C, this rectifier is suitable for a wide range of environmental conditions.
  • Guard-Ring for Stress Protection: The device includes a guard-ring for overvoltage protection, enhancing its reliability and durability.
  • RoHS Compliant and Pb-Free: The MBR20H100CTG-E3/45 is lead-free and RoHS compliant, meeting current environmental standards.

Applications

  • Power Supply Output Rectification: Ideal for output rectification in power supplies due to its high efficiency and low forward voltage drop.
  • Power Management: Suitable for various power management applications requiring high surge capacity and low power loss.
  • Instrumentation: Used in instrumentation applications where high reliability and efficiency are crucial).
  • Automotive and Industrial Applications: Qualified for automotive and industrial applications, including those requiring AEC-Q101 qualification and PPAP capability).

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MBR20H100CTG-E3/45?

    The maximum repetitive peak reverse voltage is 100 V).

  2. What is the maximum average forward rectified current per diode?

    The maximum average forward rectified current per diode is 10 A).

  3. What is the peak forward surge current capacity of the device?

    The device can handle a peak forward surge current of up to 150 A for 8.3 ms).

  4. What is the typical forward voltage drop at 10 A and 125°C?

    The typical forward voltage drop at 10 A and 125°C is 0.64 V).

  5. What is the operating junction temperature range of the MBR20H100CTG-E3/45?

    The operating junction temperature range is -65°C to +175°C).

  6. Is the MBR20H100CTG-E3/45 RoHS compliant and Pb-free?

    Yes, the device is RoHS compliant and Pb-free).

  7. What type of package does the MBR20H100CTG-E3/45 come in?

    The device is packaged in a TO-220AB case).

  8. What are some common applications for the MBR20H100CTG-E3/45?

    Common applications include power supply output rectification, power management, instrumentation, and automotive and industrial applications).

  9. Does the MBR20H100CTG-E3/45 have any special protection features?

    Yes, it includes a guard-ring for overvoltage protection).

  10. What is the typical thermal resistance per diode?

    The typical thermal resistance per diode is 2.0 °C/W).

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:3.5 µA @ 100 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

$1.73
27

Please send RFQ , we will respond immediately.

Same Series
MBR20H100CTGHE3/45
MBR20H100CTGHE3/45
DIODE ARRAY SCHOTTKY 100V TO220
MBR20H90CTG-E3/45
MBR20H90CTG-E3/45
DIODE SCHOTTKY TO-220AC

Similar Products

Part Number MBR20H100CTG-E3/45 MBR20H100CTGHE3/45 MBR20H100CTG-E3/4W MBR20H100CT-E3/45
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Obsolete Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) (per Diode) 10A 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 850 mV @ 10 A 850 mV @ 10 A 850 mV @ 10 A 770 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 3.5 µA @ 100 V 3.5 µA @ 100 V 3.5 µA @ 100 V 4.5 µA @ 100 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BAT54S RFG
BAT54S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT23
BAW56_R1_00001
BAW56_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAV170_R1_00001
BAV170_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAS40-05WH6327
BAS40-05WH6327
Infineon Technologies
SCHOTTKY DIODE
BAV70-7-F
BAV70-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT23-3
STPS20150CG-TR
STPS20150CG-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
BYQ28EB-200HE3_A/I
BYQ28EB-200HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
BAS70-04W-AQ
BAS70-04W-AQ
Diotec Semiconductor
SchottkyD, 70V, 0.07A
STPS30150CG
STPS30150CG
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
STPS10170CB
STPS10170CB
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V DPAK
BAW56W/ZLF
BAW56W/ZLF
Nexperia USA Inc.
DIODE ARRAY GEN PURP 90V SOT323
BAS40-04/ZLVL
BAS40-04/ZLVL
NXP USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT23

Related Product By Brand

SM6T30A-E3/5B
SM6T30A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM6T220A-M3/52
SM6T220A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T33A-M3/9AT
SM15T33A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
MURB1620CTTRL
MURB1620CTTRL
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 8A D2PAK
MBR20H100CTG-E3/4W
MBR20H100CTG-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY DUAL CC TO220
BAS21-E3-08
BAS21-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
BAT42WS-E3-18
BAT42WS-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
MURS260-E3/52T
MURS260-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
MUR160-E3/54
MUR160-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
BZX84C6V2-HE3-08
BZX84C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 300MW SOT23-3
BZX84C3V3-HE3-18
BZX84C3V3-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX84C8V2-G3-08
BZX84C8V2-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 300MW SOT23-3