MBR20H100CTG-E3/45
  • Share:

Vishay General Semiconductor - Diodes Division MBR20H100CTG-E3/45

Manufacturer No:
MBR20H100CTG-E3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 100V TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR20H100CTG-E3/45 is a high-performance Schottky barrier rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-efficiency and low-power loss applications, making it an excellent choice for various power management and rectification needs. The device features a dual common cathode configuration, packaged in a TO-220AB case, which is widely used in industrial and automotive applications.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum Average Forward Rectified Current (Total Device) IF(AV) 20 A
Maximum Average Forward Rectified Current (Per Diode) IF(AV) 10 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 150 A
Maximum Instantaneous Forward Voltage (IF = 10 A, TC = 25°C) VF 0.77 V
Maximum Instantaneous Forward Voltage (IF = 10 A, TC = 125°C) VF 0.64 V
Maximum Reverse Current (TJ = 25°C) IR 3.5 μA
Maximum Reverse Current (TJ = 125°C) IR 4.5 mA
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Typical Thermal Resistance per Diode RθJC 2.0 °C/W
Package TO-220AB

Key Features

  • Low Forward Voltage: The MBR20H100CTG-E3/45 features a low forward voltage drop, typically 0.64 V at 10 A and 125°C, ensuring high efficiency and low power loss.
  • High Surge Capacity: The device can handle peak forward surge currents up to 150 A for 8.3 ms, making it robust for high surge applications.
  • High Operating Junction Temperature: With an operating junction temperature range of -65°C to +175°C, this rectifier is suitable for a wide range of environmental conditions.
  • Guard-Ring for Stress Protection: The device includes a guard-ring for overvoltage protection, enhancing its reliability and durability.
  • RoHS Compliant and Pb-Free: The MBR20H100CTG-E3/45 is lead-free and RoHS compliant, meeting current environmental standards.

Applications

  • Power Supply Output Rectification: Ideal for output rectification in power supplies due to its high efficiency and low forward voltage drop.
  • Power Management: Suitable for various power management applications requiring high surge capacity and low power loss.
  • Instrumentation: Used in instrumentation applications where high reliability and efficiency are crucial).
  • Automotive and Industrial Applications: Qualified for automotive and industrial applications, including those requiring AEC-Q101 qualification and PPAP capability).

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MBR20H100CTG-E3/45?

    The maximum repetitive peak reverse voltage is 100 V).

  2. What is the maximum average forward rectified current per diode?

    The maximum average forward rectified current per diode is 10 A).

  3. What is the peak forward surge current capacity of the device?

    The device can handle a peak forward surge current of up to 150 A for 8.3 ms).

  4. What is the typical forward voltage drop at 10 A and 125°C?

    The typical forward voltage drop at 10 A and 125°C is 0.64 V).

  5. What is the operating junction temperature range of the MBR20H100CTG-E3/45?

    The operating junction temperature range is -65°C to +175°C).

  6. Is the MBR20H100CTG-E3/45 RoHS compliant and Pb-free?

    Yes, the device is RoHS compliant and Pb-free).

  7. What type of package does the MBR20H100CTG-E3/45 come in?

    The device is packaged in a TO-220AB case).

  8. What are some common applications for the MBR20H100CTG-E3/45?

    Common applications include power supply output rectification, power management, instrumentation, and automotive and industrial applications).

  9. Does the MBR20H100CTG-E3/45 have any special protection features?

    Yes, it includes a guard-ring for overvoltage protection).

  10. What is the typical thermal resistance per diode?

    The typical thermal resistance per diode is 2.0 °C/W).

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:3.5 µA @ 100 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

$1.73
27

Please send RFQ , we will respond immediately.

Same Series
MBR20H100CTG-E3/45
MBR20H100CTG-E3/45
DIODE ARRAY SCHOTTKY 100V TO220
MBR20H90CTG-E3/45
MBR20H90CTG-E3/45
DIODE SCHOTTKY TO-220AC

Similar Products

Part Number MBR20H100CTG-E3/45 MBR20H100CTGHE3/45 MBR20H100CTG-E3/4W MBR20H100CT-E3/45
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Obsolete Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) (per Diode) 10A 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 850 mV @ 10 A 850 mV @ 10 A 850 mV @ 10 A 770 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 3.5 µA @ 100 V 3.5 µA @ 100 V 3.5 µA @ 100 V 4.5 µA @ 100 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BAW56WT1G
BAW56WT1G
onsemi
DIODE ARRAY GP 70V 200MA SC70-3
BAW56
BAW56
Fairchild Semiconductor
HIGH-SPEED SWITCHING DIODES
BAV199-AQ
BAV199-AQ
Diotec Semiconductor
DIODE SOT-23 85V 0.14A 3NS
BAT54ST-7-F
BAT54ST-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
SBAV99WT1G
SBAV99WT1G
onsemi
DIODE ARRAY GP 100V 215MA SOT323
BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
BAS40DW-06-7-F
BAS40DW-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BAV70HDWQ-13
BAV70HDWQ-13
Diodes Incorporated
DIODE FS 100V 125MA SOT363
STPS10170CB-TR
STPS10170CB-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V DPAK
STTH16L06CT
STTH16L06CT
STMicroelectronics
DIODE ARRAY GP 600V 10A TO220AB
BAT54SW RVG
BAT54SW RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT323
BAS40-05HMFHT116
BAS40-05HMFHT116
Rohm Semiconductor
DIODE ARRAY SCHOT 40V 120MA SSD3

Related Product By Brand

SM6T36CA-M3/52
SM6T36CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM6T100CAHE3_A/I
SM6T100CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AA
SM6T30CAHM3_A/H
SM6T30CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM15T33A-M3/9AT
SM15T33A-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
SM6T33AHE3/5B
SM6T33AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T24AHE3_A/H
SM15T24AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SM15T39AHM3/H
SM15T39AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
BAS40-06-HE3-18
BAS40-06-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
MBR1545CT/45
MBR1545CT/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO220AB
BZX384C7V5-E3-08
BZX384C7V5-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 200MW SOD323
BZX84B13-HE3-08
BZX84B13-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 300MW SOT23-3
BZX84B24-G3-08
BZX84B24-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3