MBR20H100CTG-E3/45
  • Share:

Vishay General Semiconductor - Diodes Division MBR20H100CTG-E3/45

Manufacturer No:
MBR20H100CTG-E3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 100V TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR20H100CTG-E3/45 is a high-performance Schottky barrier rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-efficiency and low-power loss applications, making it an excellent choice for various power management and rectification needs. The device features a dual common cathode configuration, packaged in a TO-220AB case, which is widely used in industrial and automotive applications.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum Average Forward Rectified Current (Total Device) IF(AV) 20 A
Maximum Average Forward Rectified Current (Per Diode) IF(AV) 10 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 150 A
Maximum Instantaneous Forward Voltage (IF = 10 A, TC = 25°C) VF 0.77 V
Maximum Instantaneous Forward Voltage (IF = 10 A, TC = 125°C) VF 0.64 V
Maximum Reverse Current (TJ = 25°C) IR 3.5 μA
Maximum Reverse Current (TJ = 125°C) IR 4.5 mA
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Typical Thermal Resistance per Diode RθJC 2.0 °C/W
Package TO-220AB

Key Features

  • Low Forward Voltage: The MBR20H100CTG-E3/45 features a low forward voltage drop, typically 0.64 V at 10 A and 125°C, ensuring high efficiency and low power loss.
  • High Surge Capacity: The device can handle peak forward surge currents up to 150 A for 8.3 ms, making it robust for high surge applications.
  • High Operating Junction Temperature: With an operating junction temperature range of -65°C to +175°C, this rectifier is suitable for a wide range of environmental conditions.
  • Guard-Ring for Stress Protection: The device includes a guard-ring for overvoltage protection, enhancing its reliability and durability.
  • RoHS Compliant and Pb-Free: The MBR20H100CTG-E3/45 is lead-free and RoHS compliant, meeting current environmental standards.

Applications

  • Power Supply Output Rectification: Ideal for output rectification in power supplies due to its high efficiency and low forward voltage drop.
  • Power Management: Suitable for various power management applications requiring high surge capacity and low power loss.
  • Instrumentation: Used in instrumentation applications where high reliability and efficiency are crucial).
  • Automotive and Industrial Applications: Qualified for automotive and industrial applications, including those requiring AEC-Q101 qualification and PPAP capability).

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MBR20H100CTG-E3/45?

    The maximum repetitive peak reverse voltage is 100 V).

  2. What is the maximum average forward rectified current per diode?

    The maximum average forward rectified current per diode is 10 A).

  3. What is the peak forward surge current capacity of the device?

    The device can handle a peak forward surge current of up to 150 A for 8.3 ms).

  4. What is the typical forward voltage drop at 10 A and 125°C?

    The typical forward voltage drop at 10 A and 125°C is 0.64 V).

  5. What is the operating junction temperature range of the MBR20H100CTG-E3/45?

    The operating junction temperature range is -65°C to +175°C).

  6. Is the MBR20H100CTG-E3/45 RoHS compliant and Pb-free?

    Yes, the device is RoHS compliant and Pb-free).

  7. What type of package does the MBR20H100CTG-E3/45 come in?

    The device is packaged in a TO-220AB case).

  8. What are some common applications for the MBR20H100CTG-E3/45?

    Common applications include power supply output rectification, power management, instrumentation, and automotive and industrial applications).

  9. Does the MBR20H100CTG-E3/45 have any special protection features?

    Yes, it includes a guard-ring for overvoltage protection).

  10. What is the typical thermal resistance per diode?

    The typical thermal resistance per diode is 2.0 °C/W).

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:3.5 µA @ 100 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

$1.73
27

Please send RFQ , we will respond immediately.

Same Series
MBR20H100CTGHE3/45
MBR20H100CTGHE3/45
DIODE ARRAY SCHOTTKY 100V TO220
MBR20H90CTG-E3/45
MBR20H90CTG-E3/45
DIODE SCHOTTKY TO-220AC

Similar Products

Part Number MBR20H100CTG-E3/45 MBR20H100CTGHE3/45 MBR20H100CTG-E3/4W MBR20H100CT-E3/45
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Obsolete Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) (per Diode) 10A 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 850 mV @ 10 A 850 mV @ 10 A 850 mV @ 10 A 770 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 3.5 µA @ 100 V 3.5 µA @ 100 V 3.5 µA @ 100 V 4.5 µA @ 100 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BAV199,215
BAV199,215
Nexperia USA Inc.
DIODE ARRAY GP 75V 160MA SOT23
1PS70SB84,115
1PS70SB84,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 15V SOT323
BAT54A-TP
BAT54A-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT23
BAW56S,115
BAW56S,115
Nexperia USA Inc.
DIODE ARRAY GP 90V 250MA 6TSSOP
PMEG4005CT,215
PMEG4005CT,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT23
BAT54BRW-TP
BAT54BRW-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT363
BAT721AC_R1_00001
BAT721AC_R1_00001
Panjit International Inc.
SCHOTTKY BARRIER (DOUBLE) DIODES
STPS20150CG-TR
STPS20150CG-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
MBR2060CT-G
MBR2060CT-G
Comchip Technology
DIODE ARRAY SCHOTTKY 60V TO220AB
MUR3060WT
MUR3060WT
onsemi
DIODE ARRAY GP 600V 15A TO247
BAS7004TC
BAS7004TC
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
MBRB2545CTG
MBRB2545CTG
onsemi
DIODE ARRAY SCHOTTKY 45V D2PAK

Related Product By Brand

SM15T30A-E3/9AT
SM15T30A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM6T150AHE3_A/I
SM6T150AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T30CAHM3_A/H
SM6T30CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM15T36AHE3_A/H
SM15T36AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM6T220CAHE3/5B
SM6T220CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T18AHM3/H
SM15T18AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
1N4148WS-HE3-08
1N4148WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
BAS20-G3-08
BAS20-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
BZX84C22-E3-18
BZX84C22-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX84C4V3-E3-18
BZX84C4V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3
BZX84B3V6-E3-18
BZX84B3V6-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 300MW SOT23-3
BZX84B24-G3-08
BZX84B24-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3