MBR20H100CTGHE3/45
  • Share:

Vishay General Semiconductor - Diodes Division MBR20H100CTGHE3/45

Manufacturer No:
MBR20H100CTGHE3/45
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 100V TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR20H100CTGHE3/45 is a high-performance dual common cathode Schottky rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed to offer low power loss and high efficiency, making it suitable for various high-frequency applications. The diode features a guardring for overvoltage protection and low forward voltage drop, ensuring reliable operation in demanding environments.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum Average Forward Rectified Current (per diode) IF(AV) 10 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 150 A
Maximum Instantaneous Forward Voltage (per diode) VF 0.70 V (at IF = 10 A, TJ = 25 °C) V
Maximum Reverse Current (per diode) IR 3.5 μA (at TJ = 25 °C) μA
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Thermal Resistance (per diode) RθJC 2.0 °C/W
Package TO-220AB

Key Features

  • Guardring for overvoltage protection
  • Low power loss and high efficiency
  • Low forward voltage drop
  • Low leakage current
  • RoHS-compliant and halogen-free options available
  • Molding compound meets UL 94 V-0 flammability rating
  • Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

Applications

  • High frequency rectifiers in switching mode power supplies
  • Freewheeling diodes
  • DC/DC converters
  • Polarity protection applications

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MBR20H100CTGHE3/45?

    The maximum repetitive peak reverse voltage is 100 V.

  2. What is the maximum average forward rectified current per diode for this component?

    The maximum average forward rectified current per diode is 10 A.

  3. What is the peak forward surge current rating for the MBR20H100CTGHE3/45?

    The peak forward surge current is 150 A for an 8.3 ms single half sine-wave.

  4. What is the typical forward voltage drop at 10 A and 25 °C?

    The typical forward voltage drop is 0.70 V at 10 A and 25 °C.

  5. What is the maximum reverse current at the working peak reverse voltage and 25 °C?

    The maximum reverse current is 3.5 μA at the working peak reverse voltage and 25 °C.

  6. What is the operating junction and storage temperature range for this diode?

    The operating junction and storage temperature range is -65 to +175 °C.

  7. What type of package does the MBR20H100CTGHE3/45 come in?

    The component comes in a TO-220AB package.

  8. Is the MBR20H100CTGHE3/45 RoHS-compliant?

    Yes, the component is RoHS-compliant and halogen-free.

  9. What are some typical applications for the MBR20H100CTGHE3/45?

    Typical applications include high frequency rectifiers, freewheeling diodes, DC/DC converters, and polarity protection.

  10. What is the thermal resistance of the MBR20H100CTGHE3/45 per diode?

    The thermal resistance per diode is 2.0 °C/W.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:3.5 µA @ 100 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

-
560

Please send RFQ , we will respond immediately.

Same Series
MBR20H100CTGHE3/45
MBR20H100CTGHE3/45
DIODE ARRAY SCHOTTKY 100V TO220
MBR20H90CTG-E3/45
MBR20H90CTG-E3/45
DIODE SCHOTTKY TO-220AC

Similar Products

Part Number MBR20H100CTGHE3/45 MBR20H100CTHE3/45 MBR20H100CTG-E3/45
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) (per Diode) 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 850 mV @ 10 A 770 mV @ 10 A 850 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 3.5 µA @ 100 V 4.5 µA @ 100 V 3.5 µA @ 100 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BAT54S-HF
BAT54S-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
MBR20100CT-G1
MBR20100CT-G1
Diodes Incorporated
DIODE SCHOTTKY 100V 10A TO220AB
BAT5404WH6327XTSA1
BAT5404WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT323
BAS4005E6433HTMA1
BAS4005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAV70E6767
BAV70E6767
Infineon Technologies
GENERAL PURPOSE HIGH SPEED SWITC
BYV34-400,127
BYV34-400,127
WeEn Semiconductors
DIODE ARRAY GP 400V 20A TO220AB
BAV70_R1_00001
BAV70_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAV99W/DG/B3115
BAV99W/DG/B3115
NXP USA Inc.
RECTIFIER DIODE
1PS76SB21
1PS76SB21
Nexperia USA Inc.
NOW NEXPERIA 1PS76SB21 - RECTIFI
MBR6045PTG
MBR6045PTG
onsemi
DIODE ARRAY SCHOTTKY 45V SOT93
BAW56T,115
BAW56T,115
NXP USA Inc.
DIODE ARRAY GP 90V 150MA SC75
BAS40-05-7-F-79
BAS40-05-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3

Related Product By Brand

SM15T6V8CA-E3/57T
SM15T6V8CA-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
SM15T36CAHE3/9AT
SM15T36CAHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T18CAHM3/I
SM15T18CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
SM15T6V8AHM3/H
SM15T6V8AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
MBR20H100CTG-E3/45
MBR20H100CTG-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BZX55C15-TR
BZX55C15-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 500MW DO35
BZX84C3V6-E3-08
BZX84C3V6-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 300MW SOT23-3
BZX84C39-E3-08
BZX84C39-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX384C5V1-HE3-08
BZX384C5V1-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 200MW SOD323
BZX384C6V8-HE3-18
BZX384C6V8-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323
BZX84C27-G3-08
BZX84C27-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 300MW SOT23-3