MUR860G
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onsemi MUR860G

Manufacturer No:
MUR860G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 600V 8A TO220AC
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The MUR860G is an ultrafast recovery rectifier produced by onsemi, designed for use in various high-performance applications. This component is part of a series that includes other models like the MUR820G, MUR840G, and MURF860G. The MUR860G is optimized for switching power supplies, inverters, and as free-wheeling diodes, making it a versatile choice for power management systems.

Key Specifications

Characteristic Symbol Unit Value
Peak Repetitive Reverse Voltage VRRM V 600
Average Rectified Forward Current IF(AV) A 8.0
Peak Repetitive Forward Current IFM A 16
Nonrepetitive Peak Surge Current IFSM A 100
Operating Junction Temperature and Storage Temperature Range TJ, Tstg °C -65 to +175
Maximum Instantaneous Forward Voltage vF V 1.5 (at IF = 8.0 A, TC = 150°C)
Maximum Reverse Recovery Time trr ns 60
Thermal Resistance, Junction-to-Case RJC °C/W 2.0
Thermal Resistance, Junction-to-Ambient RJA °C/W 73

Key Features

  • Ultrafast recovery time of 25, 50, and 75 nanoseconds
  • Operating junction temperature up to 175°C
  • Epoxy case that meets UL94 V-0 standards
  • Low forward voltage and low leakage current
  • Reverse voltage capability up to 600 V
  • ESD ratings: Machine Model > 400 V, Human Body Model > 16,000 V
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-free and RoHS compliant

Applications

  • Switching power supplies (SMPS): DCM, CRM, PFC
  • Inverters
  • Free-wheeling diodes
  • ATX power supplies
  • Notebook adapters
  • Flat panel displays
  • Servers

Q & A

  1. What is the peak repetitive reverse voltage of the MUR860G?

    The peak repetitive reverse voltage (VRRM) of the MUR860G is 600 V.

  2. What is the average rectified forward current of the MUR860G?

    The average rectified forward current (IF(AV)) of the MUR860G is 8.0 A.

  3. What is the maximum operating junction temperature of the MUR860G?

    The maximum operating junction temperature (TJ) of the MUR860G is 175°C.

  4. What are the ESD ratings for the MUR860G?

    The ESD ratings for the MUR860G are Machine Model > 400 V and Human Body Model > 16,000 V.

  5. Is the MUR860G AEC-Q101 qualified?
  6. What are some common applications of the MUR860G?
  7. What is the thermal resistance, junction-to-case (RJC) of the MUR860G?

    The thermal resistance, junction-to-case (RJC) of the MUR860G is 2.0 °C/W.

  8. Is the MUR860G Pb-free and RoHS compliant?
  9. What is the maximum instantaneous forward voltage of the MUR860G?

    The maximum instantaneous forward voltage (vF) of the MUR860G is 1.5 V at IF = 8.0 A and TC = 150°C.

  10. What is the maximum reverse recovery time of the MUR860G?

    The maximum reverse recovery time (trr) of the MUR860G is 60 ns.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number MUR860G MUR860J MURF860G MUR860H MUR460G MUR810G MUR820G MUR840G MUR860
Manufacturer onsemi WeEn Semiconductors onsemi onsemi onsemi onsemi onsemi onsemi Harris Corporation
Product Status Active Active Active Obsolete Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 8A 8A 8A 8A 4A 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 8 A 1.25 V @ 8 A 1.5 V @ 8 A 1.5 V @ 8 A 1.28 V @ 4 A 975 mV @ 8 A 975 mV @ 8 A 1.3 V @ 8 A 1.5 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 90 ns 60 ns 60 ns 75 ns 35 ns 35 ns 60 ns 60 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V
Capacitance @ Vr, F - - - - - - - - -
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 DO-214AB, SMC TO-220-2 Full Pack TO-220-2 DO-201AA, DO-27, Axial TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 SMC TO-220FP TO-220-2 Axial TO-220-2 TO-220-2 TO-220-2 TO-220-2
Operating Temperature - Junction -65°C ~ 175°C 175°C (Max) -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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