MUR820G
  • Share:

onsemi MUR820G

Manufacturer No:
MUR820G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE GEN PURP 200V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR820G is a high-performance, ultrafast rectifier diode produced by ON Semiconductor. This device is part of the MUR/SUR8 series, designed for use in switching power supplies, inverters, and as free-wheeling diodes. The MUR820G is known for its fast recovery time, high operating junction temperature, and robust electrical characteristics, making it suitable for a wide range of applications.

Key Specifications

Characteristic Symbol Unit MUR820G
Peak Repetitive Reverse Voltage VRRM V 200
Working Peak Reverse Voltage VRWM V 200
DC Blocking Voltage VR V 200
Average Rectified Forward Current IF(AV) A 8.0
Peak Repetitive Forward Current IFM A 16
Nonrepetitive Peak Surge Current IFSM A 100
Operating Junction Temperature and Storage Temperature Range TJ, Tstg °C -65 to +175
Maximum Instantaneous Forward Voltage (iF = 8.0 A, TC = 150°C) vF V 1.30
Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/μs) trr ns 50
Thermal Resistance, Junction-to-Case RJC °C/W 2.0
Thermal Resistance, Junction-to-Ambient RJA °C/W 73

Key Features

  • Ultrafast Recovery Time: 50 nanoseconds, making it ideal for high-frequency applications.
  • High Operating Junction Temperature: Up to 175°C, ensuring reliability in demanding environments.
  • Low Forward Voltage: Reduces power losses and improves efficiency.
  • Low Leakage Current: Minimizes standby power consumption.
  • High Reverse Voltage: Up to 600 V, providing robust protection against reverse voltage spikes.
  • ESD Ratings: Machine Model > 400 V and Human Body Model > 16,000 V, ensuring protection against electrostatic discharge.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality standards.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with global regulations.
  • Corrosion Resistant and Solderable Leads: Enhances durability and ease of assembly.

Applications

  • Switching Power Supplies: Ideal for use in high-efficiency power supply designs.
  • Inverters: Suitable for inverter applications requiring fast recovery times.
  • Free-Wheeling Diodes: Used in motor control and other applications where fast recovery is critical.
  • Automotive Systems: Qualified for use in automotive applications due to its AEC-Q101 qualification.
  • Industrial Power Systems: Used in various industrial power systems requiring high reliability and performance.

Q & A

  1. What is the peak repetitive reverse voltage of the MUR820G?

    The peak repetitive reverse voltage (VRRM) of the MUR820G is 200 V.

  2. What is the average rectified forward current rating of the MUR820G?

    The average rectified forward current (IF(AV)) of the MUR820G is 8.0 A.

  3. What is the maximum operating junction temperature of the MUR820G?

    The maximum operating junction temperature (TJ) of the MUR820G is 175°C.

  4. What is the typical reverse recovery time of the MUR820G?

    The typical reverse recovery time (trr) of the MUR820G is 50 ns.

  5. Is the MUR820G Pb-Free and RoHS compliant?
  6. What are the thermal resistance values for the MUR820G?

    The thermal resistance from junction to case (RJC) is 2.0°C/W, and from junction to ambient (RJA) is 73°C/W.

  7. What are the ESD ratings for the MUR820G?

    The ESD ratings for the MUR820G are Machine Model > 400 V and Human Body Model > 16,000 V.

  8. Is the MUR820G suitable for automotive applications?
  9. What is the maximum instantaneous forward voltage of the MUR820G at 8.0 A and 150°C?

    The maximum instantaneous forward voltage (vF) at 8.0 A and 150°C is 1.30 V.

  10. What is the nonrepetitive peak surge current rating of the MUR820G?

    The nonrepetitive peak surge current (IFSM) rating of the MUR820G is 100 A.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:975 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$1.08
431

Please send RFQ , we will respond immediately.

Same Series
MUR815
MUR815
DIODE GEN PURP 150V 8A TO220AC
MUR810
MUR810
RECTIFIER DIODE
MUR840
MUR840
DIODE SWITCHING 400V 8A
MUR805G
MUR805G
DIODE GEN PURP 50V 8A TO220AC
MUR820G
MUR820G
DIODE GEN PURP 200V 8A TO220AC
MUR860G
MUR860G
DIODE GEN PURP 600V 8A TO220AC
MUR815G
MUR815G
DIODE GEN PURP 150V 8A TO220AC
MUR840G
MUR840G
DIODE GEN PURP 400V 8A TO220AC
MUR810G
MUR810G
DIODE GEN PURP 100V 8A TO220-2

Similar Products

Part Number MUR820G MUR860G MUR840G MUR820H MUR810G MUR820
Manufacturer onsemi onsemi onsemi onsemi onsemi Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 400 V 200 V 100 V 200 V
Current - Average Rectified (Io) 8A 8A 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 8 A 1.5 V @ 8 A 1.3 V @ 8 A 975 mV @ 8 A 975 mV @ 8 A 975 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 60 ns 60 ns 35 ns 35 ns 35 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 600 V 10 µA @ 400 V 5 µA @ 200 V 5 µA @ 100 V 5 µA @ 200 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220AC
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223