BYC15-600,127
  • Share:

WeEn Semiconductors BYC15-600,127

Manufacturer No:
BYC15-600,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 500V 15A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC15-600,127 is a hyperfast power diode manufactured by WeEn Semiconductors, a global joint venture between NXP Semiconductors and Beijing JianGuang Asset Management Co. Ltd. This diode is designed to offer high performance and efficiency in various power management applications. It is packaged in a TO-220AC (SOD59) plastic single-ended package, which is heatsink mounted with a single mounting hole.

Key Specifications

ParameterConditionsMinTypMaxUnit
VRRM (Repetitive Peak Reverse Voltage)--600V
VRWM (Crest Working Reverse Voltage)--600V
VR (Reverse Voltage)Tmb ≤ 100 °C; DC-500V
IF(AV) (Average Forward Current)Square-wave pulse; δ = 0.5; Tmb ≤ 98 °C--15A
IFRM (Repetitive Peak Forward Current)Square-wave pulse; δ = 0.5; tp = 25 µs; Tmb ≤ 98 °C--30A
IFSM (Non-Repetitive Peak Forward Current)tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C--200A
Tstg (Storage Temperature)--40150°C
Tj (Junction Temperature)--150°C
VF (Forward Voltage)IF = 15 A; Tj = 150 °C-1.42V
trr (Reverse Recovery Time)IF = 15 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C-19-ns

Key Features

  • Extremely fast switching times, reducing switching losses in associated MOSFETs.
  • Low reverse recovery current and low thermal resistance.
  • Designed with platinum doped technology (SABER) for low-leakage current at high temperatures.
  • High reliability and durability in a TO-220AC package.
  • Compliant with RoHS standards.

Applications

  • Continuous Current Mode (CCM) power applications.
  • Half-bridge and full-bridge switched-mode power supplies.
  • Lighting ballasts, particularly in half-bridge configurations.
  • Automotive, telecommunications, computers, and consumer electronics.
  • Intelligent home appliances and power management systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYC15-600,127 diode?
    The maximum repetitive peak reverse voltage is 600 V.
  2. What is the average forward current rating of the BYC15-600,127?
    The average forward current rating is 15 A.
  3. What is the reverse recovery time of the BYC15-600,127?
    The reverse recovery time is approximately 19 ns under specified conditions.
  4. In what package is the BYC15-600,127 diode available?
    The diode is available in a TO-220AC (SOD59) package.
  5. What are the key benefits of using the BYC15-600,127 diode?
    The key benefits include extremely fast switching times, low reverse recovery current, and low thermal resistance.
  6. Is the BYC15-600,127 RoHS compliant?
    Yes, the BYC15-600,127 is RoHS compliant.
  7. What are some common applications for the BYC15-600,127 diode?
    Common applications include CCM power supplies, half-bridge and full-bridge switched-mode power supplies, and lighting ballasts.
  8. What is the junction temperature rating of the BYC15-600,127?
    The junction temperature rating is up to 150 °C.
  9. What technology is used to reduce leakage current in the BYC15-600,127?
    The diode uses platinum doped technology (SABER) to reduce leakage current at high temperatures.
  10. Who manufactures the BYC15-600,127 diode?
    The BYC15-600,127 diode is manufactured by WeEn Semiconductors.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):500 V
Current - Average Rectified (Io):15A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:200 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$1.55
514

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC15-600,127 BYC15-600P127 BYC5-600,127 BYC15X-600,127 BYC10-600,127
Manufacturer WeEn Semiconductors NXP USA Inc. WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 500 V 600 V 500 V 500 V 500 V
Current - Average Rectified (Io) 15A - 5A 15A 10A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 15 A 3.2 V @ 15 A 2.9 V @ 5 A 2.9 V @ 15 A 2.9 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 55 ns 18 ns 50 ns 55 ns 55 ns
Current - Reverse Leakage @ Vr 200 µA @ 600 V 10 µA @ 600 V 100 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 Full Pack, Isolated Tab TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220FP TO-220AC
Operating Temperature - Junction 150°C (Max) 175°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL

Related Product By Brand

BYW29ED-200,118
BYW29ED-200,118
WeEn Semiconductors
DIODE GEN PURP 200V 8A DPAK
BYT79-500,127
BYT79-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 14A TO220AC
BT151-650LTNQ
BT151-650LTNQ
WeEn Semiconductors
SCR 650V 12A TO220AB
BT151-800R,127
BT151-800R,127
WeEn Semiconductors
SCR 800V 12A TO220AB
BT151X-500C,127
BT151X-500C,127
WeEn Semiconductors
SCR 500V 12A TO220-3
BT169H/01U
BT169H/01U
WeEn Semiconductors
SCR 800V 800MA TO92-3
BTA225-800B,127
BTA225-800B,127
WeEn Semiconductors
TRIAC 800V 25A TO220AB
BTA208S-800E,118
BTA208S-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 8A DPAK
BT139X-600,127
BT139X-600,127
WeEn Semiconductors
TRIAC 600V 16A TO220-3
BTA316X-600B,127
BTA316X-600B,127
WeEn Semiconductors
TRIAC 600V 16A TO220-3
BT137-600/DG,127
BT137-600/DG,127
WeEn Semiconductors
TRIAC 600V 8A TO220AB
BTA225B-800BTJ
BTA225B-800BTJ
WeEn Semiconductors
BTA225B-800BT/D2PAK/REEL 13" Q