BYC15-600,127
  • Share:

WeEn Semiconductors BYC15-600,127

Manufacturer No:
BYC15-600,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 500V 15A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC15-600,127 is a hyperfast power diode manufactured by WeEn Semiconductors, a global joint venture between NXP Semiconductors and Beijing JianGuang Asset Management Co. Ltd. This diode is designed to offer high performance and efficiency in various power management applications. It is packaged in a TO-220AC (SOD59) plastic single-ended package, which is heatsink mounted with a single mounting hole.

Key Specifications

ParameterConditionsMinTypMaxUnit
VRRM (Repetitive Peak Reverse Voltage)--600V
VRWM (Crest Working Reverse Voltage)--600V
VR (Reverse Voltage)Tmb ≤ 100 °C; DC-500V
IF(AV) (Average Forward Current)Square-wave pulse; δ = 0.5; Tmb ≤ 98 °C--15A
IFRM (Repetitive Peak Forward Current)Square-wave pulse; δ = 0.5; tp = 25 µs; Tmb ≤ 98 °C--30A
IFSM (Non-Repetitive Peak Forward Current)tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C--200A
Tstg (Storage Temperature)--40150°C
Tj (Junction Temperature)--150°C
VF (Forward Voltage)IF = 15 A; Tj = 150 °C-1.42V
trr (Reverse Recovery Time)IF = 15 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C-19-ns

Key Features

  • Extremely fast switching times, reducing switching losses in associated MOSFETs.
  • Low reverse recovery current and low thermal resistance.
  • Designed with platinum doped technology (SABER) for low-leakage current at high temperatures.
  • High reliability and durability in a TO-220AC package.
  • Compliant with RoHS standards.

Applications

  • Continuous Current Mode (CCM) power applications.
  • Half-bridge and full-bridge switched-mode power supplies.
  • Lighting ballasts, particularly in half-bridge configurations.
  • Automotive, telecommunications, computers, and consumer electronics.
  • Intelligent home appliances and power management systems.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYC15-600,127 diode?
    The maximum repetitive peak reverse voltage is 600 V.
  2. What is the average forward current rating of the BYC15-600,127?
    The average forward current rating is 15 A.
  3. What is the reverse recovery time of the BYC15-600,127?
    The reverse recovery time is approximately 19 ns under specified conditions.
  4. In what package is the BYC15-600,127 diode available?
    The diode is available in a TO-220AC (SOD59) package.
  5. What are the key benefits of using the BYC15-600,127 diode?
    The key benefits include extremely fast switching times, low reverse recovery current, and low thermal resistance.
  6. Is the BYC15-600,127 RoHS compliant?
    Yes, the BYC15-600,127 is RoHS compliant.
  7. What are some common applications for the BYC15-600,127 diode?
    Common applications include CCM power supplies, half-bridge and full-bridge switched-mode power supplies, and lighting ballasts.
  8. What is the junction temperature rating of the BYC15-600,127?
    The junction temperature rating is up to 150 °C.
  9. What technology is used to reduce leakage current in the BYC15-600,127?
    The diode uses platinum doped technology (SABER) to reduce leakage current at high temperatures.
  10. Who manufactures the BYC15-600,127 diode?
    The BYC15-600,127 diode is manufactured by WeEn Semiconductors.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):500 V
Current - Average Rectified (Io):15A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:200 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$1.55
514

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC15-600,127 BYC15-600P127 BYC5-600,127 BYC15X-600,127 BYC10-600,127
Manufacturer WeEn Semiconductors NXP USA Inc. WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 500 V 600 V 500 V 500 V 500 V
Current - Average Rectified (Io) 15A - 5A 15A 10A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 15 A 3.2 V @ 15 A 2.9 V @ 5 A 2.9 V @ 15 A 2.9 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 55 ns 18 ns 50 ns 55 ns 55 ns
Current - Reverse Leakage @ Vr 200 µA @ 600 V 10 µA @ 600 V 100 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 Full Pack, Isolated Tab TO-220-2
Supplier Device Package TO-220AC TO-220AC TO-220AC TO-220FP TO-220AC
Operating Temperature - Junction 150°C (Max) 175°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

BYQ28E-200,127
BYQ28E-200,127
WeEn Semiconductors
DIODE ARRAY GP 200V 10A TO220AB
BYQ28ED-200PLJ
BYQ28ED-200PLJ
WeEn Semiconductors
DIODE ARRAY GP 200V 10A DPAK
BYW29ED-200,118
BYW29ED-200,118
WeEn Semiconductors
DIODE GEN PURP 200V 8A DPAK
BT151X-500C,127
BT151X-500C,127
WeEn Semiconductors
SCR 500V 12A TO220-3
BT169H/01U
BT169H/01U
WeEn Semiconductors
SCR 800V 800MA TO92-3
BT169G-MQP
BT169G-MQP
WeEn Semiconductors
SCR 600V 800MA TO92-3
BTA201-800ER,412
BTA201-800ER,412
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT134W-600,135
BT134W-600,135
WeEn Semiconductors
TRIAC 600V 1A SC73
BTA16-600BQ
BTA16-600BQ
WeEn Semiconductors
BTA16-600B/IITO220/STANDARD MARK
BTA316-800ET,127
BTA316-800ET,127
WeEn Semiconductors
TRIAC SENS GATE 800V 16A TO220AB
Z0107NA,126
Z0107NA,126
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT131-800E/L01EP
BT131-800E/L01EP
WeEn Semiconductors
BT131-800E/L01/TO-92/STANDARD