BYV25FD-600,118
  • Share:

WeEn Semiconductors BYV25FD-600,118

Manufacturer No:
BYV25FD-600,118
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV25FD-600,118 is an enhanced ultrafast power diode manufactured by WeEn Semiconductors. This component is designed for high-efficiency and fast recovery applications, making it suitable for various power management and switching circuits. The diode is packaged in a TO-252-2 (DPAK) surface mount configuration, which is compact and ideal for modern electronic designs.

Key Specifications

ParameterValue
Voltage Rating (VRRM)600 V
Current Rating (IF(AV))5 A
Forward Voltage Drop (VF)1.3 V @ 5 A
Reverse Recovery Time (trr)17.5 ns
Package TypeTO-252-2 (DPAK)
RoHS ComplianceYes

Key Features

  • Enhanced ultrafast recovery time of 17.5 ns, ensuring high efficiency in switching applications.
  • High voltage rating of 600 V and current rating of 5 A, making it suitable for demanding power management tasks.
  • Low forward voltage drop of 1.3 V at 5 A, reducing power losses.
  • Compact TO-252-2 (DPAK) surface mount package for space-saving designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The BYV25FD-600,118 is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching power circuits and inverters.
  • Renewable energy systems, such as solar and wind power.
  • Automotive and industrial power management systems.

Q & A

  1. What is the voltage rating of the BYV25FD-600,118 diode? The voltage rating is 600 V.
  2. What is the current rating of the BYV25FD-600,118 diode? The current rating is 5 A.
  3. What is the forward voltage drop of the BYV25FD-600,118 diode at 5 A? The forward voltage drop is 1.3 V at 5 A.
  4. What is the reverse recovery time of the BYV25FD-600,118 diode? The reverse recovery time is 17.5 ns.
  5. What package type is the BYV25FD-600,118 diode available in? The diode is available in a TO-252-2 (DPAK) surface mount package.
  6. Is the BYV25FD-600,118 diode RoHS compliant? Yes, the diode is RoHS compliant.
  7. What are some common applications for the BYV25FD-600,118 diode? Common applications include power supplies, motor control systems, switching power circuits, renewable energy systems, and automotive/industrial power management.
  8. Why is the BYV25FD-600,118 diode considered ultrafast? The diode is considered ultrafast due to its enhanced recovery time of 17.5 ns.
  9. How does the BYV25FD-600,118 diode reduce power losses? The diode reduces power losses through its low forward voltage drop of 1.3 V at 5 A.
  10. What are the benefits of using a TO-252-2 (DPAK) package for the BYV25FD-600,118 diode? The TO-252-2 (DPAK) package is compact and ideal for space-saving designs.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:1.9 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.86
214

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYV25FD-600,118 BYV29FD-600,118 BYV25D-600,118 BYV25FB-600,118
Manufacturer WeEn Semiconductors NXP USA Inc. WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 5A 9A 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 5 A 1.9 V @ 8 A 1.3 V @ 5 A 1.9 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 35 ns 60 ns 35 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package DPAK DPAK DPAK D2PAK
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

BYC15X-600,127
BYC15X-600,127
WeEn Semiconductors
DIODE GEN PURP 500V 15A TO220F
BYV29X-600PQ
BYV29X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 9A TO220F
BT169GEP
BT169GEP
WeEn Semiconductors
SCR 600V 800MA TO92-3
BT139-600E/DG,127
BT139-600E/DG,127
WeEn Semiconductors
TRIAC SENS GATE 600V 16A TO220AB
BT134-600E,127
BT134-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A SOT82-3
BT136-600D/DG,127
BT136-600D/DG,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A TO220AB
BTA316B-800C,118
BTA316B-800C,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
BT139B-600G,118
BT139B-600G,118
WeEn Semiconductors
TRIAC 600V 16A D2PAK
BT139-600-0Q
BT139-600-0Q
WeEn Semiconductors
BT139-600-0/SIL3P/STANDARD MAR
Z0109MAML
Z0109MAML
WeEn Semiconductors
Z0109MA/TO-92/STANDARD MARKING
ACTT2S-800ETNJ
ACTT2S-800ETNJ
WeEn Semiconductors
ACTT2S-800ETNJ/DPAK
BUJ100LR,412
BUJ100LR,412
WeEn Semiconductors
TRANS NPN 400V 1A TO92-3