BYV25D-600,118
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WeEn Semiconductors BYV25D-600,118

Manufacturer No:
BYV25D-600,118
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV25D-600,118 is a high-efficiency, fast recovery diode manufactured by WeEn Semiconductors. This component is designed for high-voltage and high-current applications, making it suitable for various industrial and electronic systems. The diode features a surface mount DPAK package, enhancing its thermal performance and ease of integration into modern circuit designs.

Key Specifications

ParameterValueUnit
Voltage Rating (V)600V
Current Rating (I)5A
Forward Voltage Drop (Vf)1.11V
Reverse Recovery Time (trr)50ns
Peak Surge Current (Ifsm)66A
Package TypeDPAK (TO-252-2)
Thermal ResistanceLow

Key Features

  • Low leakage current, especially at high temperatures, thanks to platinum doped technology (SABER).
  • Low thermal resistance, enhancing heat dissipation and reliability.
  • Low recovery current, reducing switching losses and improving overall efficiency.
  • Fast recovery time of 50 ns, suitable for high-frequency applications.
  • Surface mount DPAK package for easy integration and improved thermal performance.

Applications

The BYV25D-600,118 diode is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Renewable energy systems, such as solar and wind power.
  • Industrial automation and control systems.

Q & A

  1. What is the voltage rating of the BYV25D-600,118 diode? The voltage rating is 600 V.
  2. What is the current rating of the BYV25D-600,118 diode? The current rating is 5 A.
  3. What is the forward voltage drop (Vf) of the BYV25D-600,118 diode? The forward voltage drop is 1.11 V.
  4. What is the reverse recovery time (trr) of the BYV25D-600,118 diode? The reverse recovery time is 50 ns.
  5. What package type does the BYV25D-600,118 diode use? The diode uses a DPAK (TO-252-2) package.
  6. What technology is used to reduce leakage current in the BYV25D-600,118 diode? Platinum doped technology (SABER) is used to reduce leakage current.
  7. What is the peak surge current (Ifsm) of the BYV25D-600,118 diode? The peak surge current is 66 A.
  8. In what types of applications is the BYV25D-600,118 diode commonly used? It is commonly used in power supplies, motor control systems, high-frequency switching circuits, renewable energy systems, and industrial automation.
  9. Is the BYV25D-600,118 diode RoHS compliant? Yes, the BYV25D-600,118 diode is RoHS compliant.
  10. What are the key benefits of using the BYV25D-600,118 diode in high-frequency applications? The key benefits include low thermal resistance, low recovery current, and fast recovery time, which improve efficiency and reliability.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:150°C (Max)
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In Stock

$0.97
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Similar Products

Part Number BYV25D-600,118 BYV25FD-600,118
Manufacturer WeEn Semiconductors WeEn Semiconductors
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V
Current - Average Rectified (Io) 5A 5A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 5 A 1.9 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 35 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK
Operating Temperature - Junction 150°C (Max) 150°C (Max)

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