Overview
The NXPSC10650Q is a Silicon Carbide (SiC) Schottky diode produced by WeEn Semiconductors Co., Ltd. This component is part of WeEn Semiconductors' extensive portfolio of bipolar power products, which includes silicon controlled rectifiers, power diodes, high voltage transistors, and silicon carbide devices. WeEn Semiconductors is a joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd (JAC Capital), focusing on advanced bipolar power technology and strong manufacturing and distribution resources in China and globally.
Key Specifications
| Attribute Name | Attribute Value |
|---|---|
| Category | Rectifiers - Single Diodes |
| Manufacturer | WeEn Semiconductors Co., Ltd |
| Packaging | Tube |
| Part Status | Discontinued |
| Technology | Silicon Carbide (SiC) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10 A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 250 µA @ 650 V |
| Capacitance @ Vr, F | 300 pF @ 1 V, 1 MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
Key Features
- High Voltage Capability: The NXPSC10650Q can handle a maximum DC reverse voltage of 650 V, making it suitable for high-voltage applications.
- High Current Rating: With an average rectified current of 10 A, this diode is designed for applications requiring significant current handling.
- Low Forward Voltage Drop: The diode features a low forward voltage drop of 1.7 V at 10 A, which reduces power losses and improves efficiency.
- No Recovery Time: The SiC Schottky technology ensures no recovery time, which is beneficial for high-frequency applications.
- Low Reverse Leakage Current: The diode has a low reverse leakage current of 250 µA at 650 V, contributing to overall system efficiency.
- High Operating Temperature: The component can operate up to a junction temperature of 175°C, making it robust for various environmental conditions.
Applications
The NXPSC10650Q is widely used in various applications due to its high performance and reliability. Some key areas include:
- Automotive Systems: Used in power management and conversion systems within vehicles.
- Telecommunications: Employed in power supplies and rectification circuits for telecommunications equipment.
- Consumer Electronics: Found in power adapters, chargers, and other consumer electronic devices requiring efficient power conversion.
- Industrial Power Supplies: Used in industrial power supplies and DC-DC converters due to its high voltage and current handling capabilities.
- Lighting Systems: Utilized in LED lighting systems and other high-efficiency lighting solutions.
Q & A
- What is the maximum DC reverse voltage of the NXPSC10650Q?
The maximum DC reverse voltage is 650 V.
- What is the average rectified current rating of the NXPSC10650Q?
The average rectified current rating is 10 A.
- What is the forward voltage drop of the NXPSC10650Q at 10 A?
The forward voltage drop is 1.7 V at 10 A.
- Does the NXPSC10650Q have any recovery time?
No, the SiC Schottky technology ensures no recovery time.
- What is the reverse leakage current of the NXPSC10650Q at 650 V?
The reverse leakage current is 250 µA at 650 V.
- What is the operating temperature range of the NXPSC10650Q?
The junction temperature can operate up to 175°C.
- What is the packaging type of the NXPSC10650Q?
The packaging type is TO-220-2 (TO-220AC).
- Is the NXPSC10650Q still in production?
No, the part is discontinued.
- What are some common applications of the NXPSC10650Q?
Common applications include automotive systems, telecommunications, consumer electronics, industrial power supplies, and lighting systems.
- Who is the manufacturer of the NXPSC10650Q?
The manufacturer is WeEn Semiconductors Co., Ltd.
