BYC15X-600,127
  • Share:

WeEn Semiconductors BYC15X-600,127

Manufacturer No:
BYC15X-600,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 500V 15A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC15X-600,127 from WeEn Semiconductors is a high-performance, hyperfast power diode designed for various power management and switching applications. This diode is housed in a TO-220AC (SOD59) plastic package, which is suitable for through-hole mounting and features a heatsink for efficient thermal management.

It is characterized by its fast switching capabilities, low reverse recovery current, and low thermal resistance, making it an ideal component for reducing switching losses in associated MOSFETs and other power electronics.

Key Specifications

Parameter Conditions Min Typ Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - 600 V
IF(AV) (Average Forward Current) square-wave pulse; δ = 0.5; Tmb ≤ 98 °C - - 15 A
IFRM (Repetitive Peak Forward Current) square-wave pulse; δ = 0.5; tp = 25 µs; Tmb ≤ 98 °C - - 30 A
IFSM (Non-Repetitive Peak Forward Current) tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C - - 200 A
VF (Forward Voltage) IF = 15 A; Tj = 150 °C - - 2 V
trr (Reverse Recovery Time) IF = 15 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C - - 19 ns
Tstg (Storage Temperature) - -40 150 °C
Tj (Junction Temperature) - - 150 °C

Key Features

  • Hyperfast Switching: Extremely fast switching times, reducing switching losses in associated MOSFETs and other power electronics.
  • Low Reverse Recovery Current: Minimizes the current during the reverse recovery phase, enhancing overall efficiency.
  • Low Thermal Resistance: Efficient thermal management due to the TO-220AC package with a heatsink.
  • High Reliability: Designed with platinum doped technology (SABER) for low-leakage current at high temperatures.
  • Through-Hole Mounting: Suitable for TO-220AC (SOD59) packages, facilitating easy integration into various applications).

Applications

  • Continuous Current Mode (CCM) Power Supplies: Ideal for high-efficiency power supply designs.
  • Half-Bridge and Full-Bridge Switched-Mode Power Supplies: Suitable for use in half-bridge and full-bridge configurations).
  • Lighting Ballasts: Used in half-bridge lighting ballast applications due to its fast switching and low recovery characteristics).

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYC15X-600,127 diode?

    The maximum repetitive peak reverse voltage (VRRM) is 600 V).

  2. What is the average forward current rating of this diode?

    The average forward current (IF(AV)) is 15 A).

  3. What is the reverse recovery time of the BYC15X-600,127 diode?

    The reverse recovery time (trr) is 19 ns under specified conditions).

  4. What type of package does the BYC15X-600,127 come in?

    The diode is housed in a TO-220AC (SOD59) plastic package).

  5. What are the key features of the BYC15X-600,127 diode?

    Key features include hyperfast switching, low reverse recovery current, low thermal resistance, and high reliability due to platinum doped technology).

  6. What are the typical applications for the BYC15X-600,127 diode?

    Typical applications include CCM power supplies, half-bridge and full-bridge switched-mode power supplies, and lighting ballasts).

  7. What is the maximum junction temperature for this diode?

    The maximum junction temperature (Tj) is 150 °C).

  8. What is the maximum forward voltage drop of the BYC15X-600,127 diode?

    The maximum forward voltage (VF) is 2 V at IF = 15 A and Tj = 150 °C).

  9. Is the BYC15X-600,127 diode suitable for high-temperature operations?

    Yes, it is designed with platinum doped technology for low-leakage current at high temperatures).

  10. What is the storage temperature range for the BYC15X-600,127 diode?

    The storage temperature range (Tstg) is from -40 °C to 150 °C).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):500 V
Current - Average Rectified (Io):15A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:200 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220FP
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
271

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC15X-600,127 BYC5X-600,127 BYC10X-600,127 BYC15-600,127
Manufacturer WeEn Semiconductors NXP USA Inc. NXP USA Inc. WeEn Semiconductors
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 500 V 500 V 500 V 500 V
Current - Average Rectified (Io) 15A 5A 10A 15A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 15 A 2.9 V @ 5 A 2.9 V @ 10 A 2.9 V @ 15 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 55 ns 50 ns 55 ns 55 ns
Current - Reverse Leakage @ Vr 200 µA @ 600 V 100 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack TO-220-2 Full Pack TO-220-2
Supplier Device Package TO-220FP TO-220F TO-220F TO-220AC
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123

Related Product By Brand

BYV29X-600,127
BYV29X-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 9A TO220FP
BT169D,112
BT169D,112
WeEn Semiconductors
SCR 400V 800MA TO92-3
Z0107NA/DG,116
Z0107NA/DG,116
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BTA201W-800E,115
BTA201W-800E,115
WeEn Semiconductors
TRIAC SENS GATE 800V 1A SC73
BTA2008W-600D,135
BTA2008W-600D,135
WeEn Semiconductors
TRIAC SENS GATE 600V 0.8A SC73
Z0103NN0,135
Z0103NN0,135
WeEn Semiconductors
TRIAC SENS GATE 800V 1A SC73
BT139B-800G,118
BT139B-800G,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
BT138-800G,127
BT138-800G,127
WeEn Semiconductors
TRIAC 800V 12A TO220AB
Z0107NA,126
Z0107NA,126
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT137B-800F,118
BT137B-800F,118
WeEn Semiconductors
TRIAC 800V 8A D2PAK
BT137-600E/DG
BT137-600E/DG
WeEn Semiconductors
TRIAC SENS GATE 600V 8A TO220AB
BT131-800D/L01EP
BT131-800D/L01EP
WeEn Semiconductors
TRIAC SENS GATE 800V 1A