BYC10X-600,127
  • Share:

NXP USA Inc. BYC10X-600,127

Manufacturer No:
BYC10X-600,127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW WEEN - BYC10X-600 - HYPERFAS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC10X-600,127 is a hyperfast rectifier diode produced by NXP USA Inc. This component is designed for high-performance applications requiring fast recovery times and high current handling capabilities. It is packaged in a TO-220F plastic single-ended package, which is isolated and has a mounting hole, making it suitable for various power management and rectification needs.

Key Specifications

ParameterConditionsMinTypMaxUnit
VRRM (Repetitive Peak Reverse Voltage)---600V
VRWM (Crest Working Reverse Voltage)---600V
IF(AV) (Average Forward Current)square waveform; δ = 0.5; Th ≤37 °C--10A
IFRM (Repetitive Peak Forward Current)square waveform; δ = 0.5; Th ≤37 °C--20A
IFSM (Non-Repetitive Peak Forward Current)t = 10 ms; sinusoidal waveform--91A
Tstg (Storage Temperature)--40-+150°C
Tj (Junction Temperature)---150°C
VF (Forward Voltage)IF = 10 A; Tj = 150 °C-1.322.03V
IR (Reverse Current)VR = 600 V--200µA
trr (Reverse Recovery Time)IF = 10 A to VR = 400 V; dIF/dt = 500 A/µs-19-ns

Key Features

  • Hyperfast recovery time, making it suitable for high-frequency applications.
  • High repetitive peak reverse voltage (VRRM) of 600 V and crest working reverse voltage (VRWM) of 600 V.
  • High average forward current (IF(AV)) of 10 A and repetitive peak forward current (IFRM) of 20 A.
  • Low forward voltage drop (VF) with typical values ranging from 1.32 V to 2.03 V at different current and temperature conditions.
  • Low reverse recovery time (trr) of 19 ns to 40 ns depending on the conditions.
  • Wide operating junction temperature range up to 150 °C.

Applications

The BYC10X-600,127 is versatile and can be used in various applications, including:

  • Power supplies and rectifier circuits.
  • Switch-mode power supplies (SMPS).
  • Motor control and drive systems.
  • High-frequency inverters and converters.
  • General-purpose rectification in industrial and automotive systems.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the BYC10X-600,127?
    The VRRM is 600 V.
  2. What is the average forward current (IF(AV)) of this diode?
    The IF(AV) is 10 A under specified conditions.
  3. What is the typical forward voltage drop (VF) at 10 A and 150 °C?
    The typical VF is 1.32 V to 2.03 V.
  4. What is the reverse recovery time (trr) of the BYC10X-600,127?
    The trr ranges from 19 ns to 40 ns depending on the conditions.
  5. What is the maximum junction temperature (Tj) for this diode?
    The maximum Tj is 150 °C.
  6. In what package is the BYC10X-600,127 available?
    The diode is available in a TO-220F plastic single-ended package.
  7. What are some common applications of the BYC10X-600,127?
    Common applications include power supplies, SMPS, motor control systems, high-frequency inverters, and general-purpose rectification.
  8. What is the storage temperature range for this component?
    The storage temperature range is from -40 °C to +150 °C.
  9. How much non-repetitive peak forward current (IFSM) can the diode handle?
    The IFSM is 91 A for a 10 ms sinusoidal waveform.
  10. What is the peak reverse recovery current (IRM) under specified conditions?
    The IRM is 3.0 A to 12 A depending on the conditions.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):500 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:200 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:TO-220F
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.52
175

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC10X-600,127 BYC20X-600,127 BYC15X-600,127 BYC10-600,127 BYC10D-600,127 BYC10DX-600,127
Manufacturer NXP USA Inc. WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors NXP USA Inc. WeEn Semiconductors
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 500 V 500 V 500 V 500 V 500 V 500 V
Current - Average Rectified (Io) 10A 20A 15A 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 10 A 2.9 V @ 20 A 2.9 V @ 15 A 2.9 V @ 10 A 2.5 V @ 10 A 2.5 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 55 ns 55 ns 55 ns 55 ns 18 ns 18 ns
Current - Reverse Leakage @ Vr 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack, Isolated Tab TO-220-2 TO-220-2 TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220F TO-220FP TO-220FP TO-220AC TO-220AC TO-220FP
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

PESD5V0L5UV/DG125
PESD5V0L5UV/DG125
NXP USA Inc.
TVS DIODE
PMEG4030ER/DG/B2,1
PMEG4030ER/DG/B2,1
NXP USA Inc.
PMEG4030ER/DG/B2,1
BZX84-C13/DG/B3215
BZX84-C13/DG/B3215
NXP USA Inc.
DIODE ZENER
PDTA144EU/ZL115
PDTA144EU/ZL115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
LPC55S28JBD64K
LPC55S28JBD64K
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 64HTQFP
LPC1823JET100E
LPC1823JET100E
NXP USA Inc.
IC MCU 32BIT 512KB FLSH 100TFBGA
MC56F84550VLFR
MC56F84550VLFR
NXP USA Inc.
IC MCU 32BIT 96KB FLASH 48LQFP
LPC11E67JBD48E
LPC11E67JBD48E
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 48LQFP
MIMX8MQ6DVAJZAA,557
MIMX8MQ6DVAJZAA,557
NXP USA Inc.
I.MX 8M: ARM CORTEX A53 QUAD COR
74LV08D/C4118
74LV08D/C4118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
HEF4528BP652
HEF4528BP652
NXP USA Inc.
IC MULTIVIBRATOR