BYC10X-600,127
  • Share:

NXP USA Inc. BYC10X-600,127

Manufacturer No:
BYC10X-600,127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW WEEN - BYC10X-600 - HYPERFAS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC10X-600,127 is a hyperfast rectifier diode produced by NXP USA Inc. This component is designed for high-performance applications requiring fast recovery times and high current handling capabilities. It is packaged in a TO-220F plastic single-ended package, which is isolated and has a mounting hole, making it suitable for various power management and rectification needs.

Key Specifications

ParameterConditionsMinTypMaxUnit
VRRM (Repetitive Peak Reverse Voltage)---600V
VRWM (Crest Working Reverse Voltage)---600V
IF(AV) (Average Forward Current)square waveform; δ = 0.5; Th ≤37 °C--10A
IFRM (Repetitive Peak Forward Current)square waveform; δ = 0.5; Th ≤37 °C--20A
IFSM (Non-Repetitive Peak Forward Current)t = 10 ms; sinusoidal waveform--91A
Tstg (Storage Temperature)--40-+150°C
Tj (Junction Temperature)---150°C
VF (Forward Voltage)IF = 10 A; Tj = 150 °C-1.322.03V
IR (Reverse Current)VR = 600 V--200µA
trr (Reverse Recovery Time)IF = 10 A to VR = 400 V; dIF/dt = 500 A/µs-19-ns

Key Features

  • Hyperfast recovery time, making it suitable for high-frequency applications.
  • High repetitive peak reverse voltage (VRRM) of 600 V and crest working reverse voltage (VRWM) of 600 V.
  • High average forward current (IF(AV)) of 10 A and repetitive peak forward current (IFRM) of 20 A.
  • Low forward voltage drop (VF) with typical values ranging from 1.32 V to 2.03 V at different current and temperature conditions.
  • Low reverse recovery time (trr) of 19 ns to 40 ns depending on the conditions.
  • Wide operating junction temperature range up to 150 °C.

Applications

The BYC10X-600,127 is versatile and can be used in various applications, including:

  • Power supplies and rectifier circuits.
  • Switch-mode power supplies (SMPS).
  • Motor control and drive systems.
  • High-frequency inverters and converters.
  • General-purpose rectification in industrial and automotive systems.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the BYC10X-600,127?
    The VRRM is 600 V.
  2. What is the average forward current (IF(AV)) of this diode?
    The IF(AV) is 10 A under specified conditions.
  3. What is the typical forward voltage drop (VF) at 10 A and 150 °C?
    The typical VF is 1.32 V to 2.03 V.
  4. What is the reverse recovery time (trr) of the BYC10X-600,127?
    The trr ranges from 19 ns to 40 ns depending on the conditions.
  5. What is the maximum junction temperature (Tj) for this diode?
    The maximum Tj is 150 °C.
  6. In what package is the BYC10X-600,127 available?
    The diode is available in a TO-220F plastic single-ended package.
  7. What are some common applications of the BYC10X-600,127?
    Common applications include power supplies, SMPS, motor control systems, high-frequency inverters, and general-purpose rectification.
  8. What is the storage temperature range for this component?
    The storage temperature range is from -40 °C to +150 °C.
  9. How much non-repetitive peak forward current (IFSM) can the diode handle?
    The IFSM is 91 A for a 10 ms sinusoidal waveform.
  10. What is the peak reverse recovery current (IRM) under specified conditions?
    The IRM is 3.0 A to 12 A depending on the conditions.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):500 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:200 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:TO-220F
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.52
175

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC10X-600,127 BYC20X-600,127 BYC15X-600,127 BYC10-600,127 BYC10D-600,127 BYC10DX-600,127
Manufacturer NXP USA Inc. WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors NXP USA Inc. WeEn Semiconductors
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 500 V 500 V 500 V 500 V 500 V 500 V
Current - Average Rectified (Io) 10A 20A 15A 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 10 A 2.9 V @ 20 A 2.9 V @ 15 A 2.9 V @ 10 A 2.5 V @ 10 A 2.5 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 55 ns 55 ns 55 ns 55 ns 18 ns 18 ns
Current - Reverse Leakage @ Vr 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack, Isolated Tab TO-220-2 TO-220-2 TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220F TO-220FP TO-220FP TO-220AC TO-220AC TO-220FP
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

BAT54S/6215
BAT54S/6215
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BC807-25/L215
BC807-25/L215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PCF85063TP/1Z
PCF85063TP/1Z
NXP USA Inc.
IC RTC CLK/CALENDAR I2C 8-SON
LPC2194HBD64/01,15
LPC2194HBD64/01,15
NXP USA Inc.
IC MCU 16/32B 256KB FLASH 64LQFP
LPC11U24FBD48/301,
LPC11U24FBD48/301,
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
MKL26Z128VLH4
MKL26Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
S9S12G48ACLF
S9S12G48ACLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
74HC4852D,112
74HC4852D,112
NXP USA Inc.
74HC4852D - DIFFERENTIAL MULTIP
IP4786CZ32518
IP4786CZ32518
NXP USA Inc.
IP4786CZ32S - CONSUMER CIRCUIT
SC28L198A1A,529
SC28L198A1A,529
NXP USA Inc.
IC UART OCTAL SOT189-3
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC