BYC10X-600,127
  • Share:

NXP USA Inc. BYC10X-600,127

Manufacturer No:
BYC10X-600,127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW WEEN - BYC10X-600 - HYPERFAS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC10X-600,127 is a hyperfast rectifier diode produced by NXP USA Inc. This component is designed for high-performance applications requiring fast recovery times and high current handling capabilities. It is packaged in a TO-220F plastic single-ended package, which is isolated and has a mounting hole, making it suitable for various power management and rectification needs.

Key Specifications

ParameterConditionsMinTypMaxUnit
VRRM (Repetitive Peak Reverse Voltage)---600V
VRWM (Crest Working Reverse Voltage)---600V
IF(AV) (Average Forward Current)square waveform; δ = 0.5; Th ≤37 °C--10A
IFRM (Repetitive Peak Forward Current)square waveform; δ = 0.5; Th ≤37 °C--20A
IFSM (Non-Repetitive Peak Forward Current)t = 10 ms; sinusoidal waveform--91A
Tstg (Storage Temperature)--40-+150°C
Tj (Junction Temperature)---150°C
VF (Forward Voltage)IF = 10 A; Tj = 150 °C-1.322.03V
IR (Reverse Current)VR = 600 V--200µA
trr (Reverse Recovery Time)IF = 10 A to VR = 400 V; dIF/dt = 500 A/µs-19-ns

Key Features

  • Hyperfast recovery time, making it suitable for high-frequency applications.
  • High repetitive peak reverse voltage (VRRM) of 600 V and crest working reverse voltage (VRWM) of 600 V.
  • High average forward current (IF(AV)) of 10 A and repetitive peak forward current (IFRM) of 20 A.
  • Low forward voltage drop (VF) with typical values ranging from 1.32 V to 2.03 V at different current and temperature conditions.
  • Low reverse recovery time (trr) of 19 ns to 40 ns depending on the conditions.
  • Wide operating junction temperature range up to 150 °C.

Applications

The BYC10X-600,127 is versatile and can be used in various applications, including:

  • Power supplies and rectifier circuits.
  • Switch-mode power supplies (SMPS).
  • Motor control and drive systems.
  • High-frequency inverters and converters.
  • General-purpose rectification in industrial and automotive systems.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the BYC10X-600,127?
    The VRRM is 600 V.
  2. What is the average forward current (IF(AV)) of this diode?
    The IF(AV) is 10 A under specified conditions.
  3. What is the typical forward voltage drop (VF) at 10 A and 150 °C?
    The typical VF is 1.32 V to 2.03 V.
  4. What is the reverse recovery time (trr) of the BYC10X-600,127?
    The trr ranges from 19 ns to 40 ns depending on the conditions.
  5. What is the maximum junction temperature (Tj) for this diode?
    The maximum Tj is 150 °C.
  6. In what package is the BYC10X-600,127 available?
    The diode is available in a TO-220F plastic single-ended package.
  7. What are some common applications of the BYC10X-600,127?
    Common applications include power supplies, SMPS, motor control systems, high-frequency inverters, and general-purpose rectification.
  8. What is the storage temperature range for this component?
    The storage temperature range is from -40 °C to +150 °C.
  9. How much non-repetitive peak forward current (IFSM) can the diode handle?
    The IFSM is 91 A for a 10 ms sinusoidal waveform.
  10. What is the peak reverse recovery current (IRM) under specified conditions?
    The IRM is 3.0 A to 12 A depending on the conditions.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):500 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:200 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:TO-220F
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.52
175

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC10X-600,127 BYC20X-600,127 BYC15X-600,127 BYC10-600,127 BYC10D-600,127 BYC10DX-600,127
Manufacturer NXP USA Inc. WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors NXP USA Inc. WeEn Semiconductors
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 500 V 500 V 500 V 500 V 500 V 500 V
Current - Average Rectified (Io) 10A 20A 15A 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 10 A 2.9 V @ 20 A 2.9 V @ 15 A 2.9 V @ 10 A 2.5 V @ 10 A 2.5 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 55 ns 55 ns 55 ns 55 ns 18 ns 18 ns
Current - Reverse Leakage @ Vr 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V 200 µA @ 600 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack, Isolated Tab TO-220-2 TO-220-2 TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220F TO-220FP TO-220FP TO-220AC TO-220AC TO-220FP
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80

Related Product By Brand

BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
ADC1004S030TS/C1:1
ADC1004S030TS/C1:1
NXP USA Inc.
IC ADC 10BIT 28SSOP
MKE04Z128VLH4
MKE04Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MK24FN1M0VLL12
MK24FN1M0VLL12
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 100LQFP
MKL26Z128VLH4
MKL26Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MIMXRT1176CVM8A
MIMXRT1176CVM8A
NXP USA Inc.
IC MCU 32BIT EXT MEM 289MAPBGA
MCHC908QT2CDWER
MCHC908QT2CDWER
NXP USA Inc.
IC MCU 8BIT 1.5KB FLASH 8SO
LPC4330FET100Y
LPC4330FET100Y
NXP USA Inc.
IC MCU 32BIT ROMLESS 100TFBGA
74HCT4851PW/S400118
74HCT4851PW/S400118
NXP USA Inc.
SINGLE-ENDED MUX, 8 CHANNEL
TJA1051T/3/1U
TJA1051T/3/1U
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
N74F07D,602
N74F07D,602
NXP USA Inc.
IC BUFFER NON-INVERT 5.5V 14SO
MFRC53001T/0FE,112
MFRC53001T/0FE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO