BYC20X-600,127
  • Share:

WeEn Semiconductors BYC20X-600,127

Manufacturer No:
BYC20X-600,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 500V 20A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC20X-600,127 is a hyperfast rectifier diode produced by WeEn Semiconductors. This component is designed for high-performance applications requiring fast switching times and low thermal resistance. It is packaged in a SOD113 (2-lead TO-220F) plastic package, which is isolated and suitable for heatsink mounting. The diode is known for its epitaxial construction, which enhances its switching characteristics and reduces switching losses in associated MOSFETs.

Key Specifications

ParameterConditionsMinTypMaxUnit
VRRM (Repetitive Peak Reverse Voltage)---600V
VRWM (Crest Working Reverse Voltage)---600V
IF(AV) (Average Forward Current)square waveform; δ = 0.5; Th ≤25 °C--20A
IFRM (Repetitive Peak Forward Current)square waveform; δ = 0.5; Th ≤25 °C; tp = 25 µs--40A
IFSM (Non-Repetitive Peak Forward Current)t = 10 ms; sinusoidal waveform--250A
Tstg (Storage Temperature)--40-150°C
Tj (Junction Temperature)---150°C
Vf (Forward Voltage)IF = 20 A; Tj = 150 °C-1.541.97V
trr (Reverse Recovery Time)IF = 20 A to VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C-19-ns

Key Features

  • Hyperfast switching times, reducing switching losses in associated MOSFETs.
  • Low thermal resistance.
  • Low reverse recovery current.
  • Isolated package suitable for heatsink mounting.
  • Epitaxial construction for enhanced performance.

Applications

  • Half-bridge or full-bridge switched-mode power supplies.
  • Continuous Current Mode (CCM) Power Factor Correction (PFC).
  • Half-bridge lighting ballasts.

Q & A

  1. What is the repetitive peak reverse voltage (VRRM) of the BYC20X-600,127?
    The VRRM is 600 V.
  2. What is the average forward current (IF(AV)) rating of this diode?
    The IF(AV) is 20 A.
  3. What is the typical reverse recovery time (trr) of the BYC20X-600,127?
    The typical trr is 19 ns at Tj = 25 °C.
  4. In what type of package is the BYC20X-600,127 available?
    The diode is packaged in a SOD113 (2-lead TO-220F) plastic package.
  5. What are some common applications for the BYC20X-600,127?
    Common applications include half-bridge or full-bridge switched-mode power supplies, CCM Power Factor Correction (PFC), and half-bridge lighting ballasts.
  6. What is the junction temperature (Tj) limit for the BYC20X-600,127?
    The junction temperature limit is 150 °C.
  7. What is the forward voltage (Vf) at 20 A and Tj = 150 °C?
    The forward voltage is typically 1.54 V.
  8. Is the package of the BYC20X-600,127 isolated?
    Yes, the package is isolated and suitable for heatsink mounting.
  9. What is the non-repetitive peak forward current (IFSM) rating for a 10 ms sinusoidal waveform?
    The IFSM rating is 250 A.
  10. What is the storage temperature range for the BYC20X-600,127?
    The storage temperature range is from -40 °C to 150 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):500 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:200 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220FP
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$1.95
376

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC20X-600,127 BYC20X-600P127 BYC10X-600,127 BYC20-600,127
Manufacturer WeEn Semiconductors NXP USA Inc. NXP USA Inc. WeEn Semiconductors
Product Status Active Active Active Active
Diode Type Standard - Standard Standard
Voltage - DC Reverse (Vr) (Max) 500 V - 500 V 500 V
Current - Average Rectified (Io) 20A - 10A 20A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 20 A - 2.9 V @ 10 A 2.9 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) - Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 55 ns - 55 ns 55 ns
Current - Reverse Leakage @ Vr 200 µA @ 600 V - 200 µA @ 600 V 200 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole - Through Hole Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab - TO-220-2 Full Pack TO-220-2
Supplier Device Package TO-220FP - TO-220F TO-220AC
Operating Temperature - Junction 150°C (Max) - 150°C (Max) 150°C (Max)

Related Product By Categories

MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA

Related Product By Brand

BYV29B-600PJ
BYV29B-600PJ
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
BT148W-600R,115
BT148W-600R,115
WeEn Semiconductors
SCR 600V 1A SC73
BT169H-LML
BT169H-LML
WeEn Semiconductors
SCR 800V 800MA TO92-3
BT136-600E/L01,127
BT136-600E/L01,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A TO220AB
ACTT2X-800E/DGQ
ACTT2X-800E/DGQ
WeEn Semiconductors
TRIAC SENS GATE 800V 2A TO220F
BT136S-600E,118
BT136S-600E,118
WeEn Semiconductors
TRIAC SENS GATE 600V 4A DPAK
BTA316B-800C,118
BTA316B-800C,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
BT131-800D,116
BT131-800D,116
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT131W-600,135
BT131W-600,135
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BT137S-800E,118
BT137S-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 8A DPAK
BT138-600G0TQ
BT138-600G0TQ
WeEn Semiconductors
BT138-600G0T/SIL3P/STANDARD MA
BTA316-800C/L05Q
BTA316-800C/L05Q
WeEn Semiconductors
BTA316-800C L05Q SIL3P STANDARD