BYV29X-600,127
  • Share:

WeEn Semiconductors BYV29X-600,127

Manufacturer No:
BYV29X-600,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 9A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV29X-600,127 is a high-performance ultrafast rectifier diode manufactured by WeEn Semiconductors. This component is designed for use in high-frequency switched-mode power supplies and other applications requiring fast recovery times and high efficiency. The diode features a through-hole TO-220FP package with an isolated tab, making it suitable for a variety of power management and rectification tasks.

Key Specifications

Parameter Value
Voltage Rating (V) 600 V
Current Rating (A) 9 A
Forward Voltage (V) 1.26 V @ 8 A
Reverse Current (μA) 50 μA @ 600 V
Recovery Time (ns) <= 500 ns
Package Type TO-220FP (Through Hole, Isolated Tab)
Terminal Finish Tin (Sn)
RoHS Compliance Yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Ultrafast recovery time of <= 500 ns, making it ideal for high-frequency applications.
  • Low forward voltage drop of 1.26 V at 8 A, enhancing efficiency in power supplies.
  • High current rating of 9 A and voltage rating of 600 V, suitable for demanding power management tasks.
  • Through-hole TO-220FP package with an isolated tab, providing good thermal dissipation and ease of mounting.
  • Tin (Sn) terminal finish for improved solderability and corrosion resistance.
  • RoHS compliant, ensuring environmental safety and regulatory compliance.

Applications

  • High-frequency switched-mode power supplies.
  • Power rectification in industrial and consumer electronics.
  • Automotive and telecommunications systems requiring fast recovery diodes.
  • Medical devices and equipment needing high-efficiency rectifiers.

Q & A

  1. What is the voltage rating of the BYV29X-600,127 diode?

    The voltage rating of the BYV29X-600,127 diode is 600 V.

  2. What is the current rating of this diode?

    The current rating of the BYV29X-600,127 diode is 9 A.

  3. What is the recovery time of this diode?

    The recovery time of the BYV29X-600,127 diode is <= 500 ns.

  4. What type of package does this diode use?

    The BYV29X-600,127 diode uses a through-hole TO-220FP package with an isolated tab.

  5. Is the BYV29X-600,127 diode RoHS compliant?

    Yes, the BYV29X-600,127 diode is RoHS compliant.

  6. What is the terminal finish of this diode?

    The terminal finish of the BYV29X-600,127 diode is Tin (Sn).

  7. What are the typical applications of this diode?

    The BYV29X-600,127 diode is typically used in high-frequency switched-mode power supplies, power rectification in industrial and consumer electronics, automotive systems, and medical devices.

  8. What is the moisture sensitivity level (MSL) of this diode?

    The moisture sensitivity level (MSL) of the BYV29X-600,127 diode is 1 (Unlimited).

  9. What is the forward voltage drop of this diode at 8 A?

    The forward voltage drop of the BYV29X-600,127 diode at 8 A is 1.26 V.

  10. Is the BYV29X-600,127 diode suitable for high-frequency applications?

    Yes, the BYV29X-600,127 diode is designed for high-frequency applications due to its ultrafast recovery time.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):9A
Voltage - Forward (Vf) (Max) @ If:1.26 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220FP
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$1.00
150

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYV29X-600,127 BYV25X-600,127 BYV29-600,127 BYV29F-600,127 BYV29FX-600,127 BYV29G-600,127 BYV29X-500,127
Manufacturer WeEn Semiconductors NXP USA Inc. WeEn Semiconductors NXP Semiconductors WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Average Rectified (Io) 9A 5A 9A 9A 9A 9A 9A
Voltage - Forward (Vf) (Max) @ If 1.26 V @ 8 A 1.3 V @ 5 A 1.25 V @ 8 A 1.9 V @ 8 A 1.9 V @ 8 A 1.25 V @ 8 A 1.25 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 60 ns 60 ns 35 ns 35 ns 60 ns 60 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 500 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack TO-220-2 TO-220-2 TO-220-2 Full Pack, Isolated Tab TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220FP TO-220F TO-220AC TO-220AC TO-220FP I2PAK TO-220FP
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

NXPSC10650B6J
NXPSC10650B6J
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A D2PAK
BYW29E-200,127
BYW29E-200,127
WeEn Semiconductors
DIODE GEN PURP 200V 8A TO220AC
BTA201-800ER,116
BTA201-800ER,116
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT131-600D,412
BT131-600D,412
WeEn Semiconductors
TRIAC SENS GATE 600V 1A TO92-3
BT134W-600E,115
BT134W-600E,115
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BTA41-800BQ
BTA41-800BQ
WeEn Semiconductors
BTA41-800BQ/II TO3P/STANDARD MAR
ACTT2X-800E/DGQ
ACTT2X-800E/DGQ
WeEn Semiconductors
TRIAC SENS GATE 800V 2A TO220F
BT139-800G,127
BT139-800G,127
WeEn Semiconductors
TRIAC 800V 16A TO220AB
BT139B-800E,118
BT139B-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 16A D2PAK
BT137-800G0TQ
BT137-800G0TQ
WeEn Semiconductors
TRIAC 800V 8A
BT139-600-0Q
BT139-600-0Q
WeEn Semiconductors
BT139-600-0/SIL3P/STANDARD MAR
BTA316X-800CTQ
BTA316X-800CTQ
WeEn Semiconductors
BTA316X-800CTQ/TO-220F/STANDARD