BYV29X-600,127
  • Share:

WeEn Semiconductors BYV29X-600,127

Manufacturer No:
BYV29X-600,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 9A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV29X-600,127 is a high-performance ultrafast rectifier diode manufactured by WeEn Semiconductors. This component is designed for use in high-frequency switched-mode power supplies and other applications requiring fast recovery times and high efficiency. The diode features a through-hole TO-220FP package with an isolated tab, making it suitable for a variety of power management and rectification tasks.

Key Specifications

Parameter Value
Voltage Rating (V) 600 V
Current Rating (A) 9 A
Forward Voltage (V) 1.26 V @ 8 A
Reverse Current (μA) 50 μA @ 600 V
Recovery Time (ns) <= 500 ns
Package Type TO-220FP (Through Hole, Isolated Tab)
Terminal Finish Tin (Sn)
RoHS Compliance Yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Ultrafast recovery time of <= 500 ns, making it ideal for high-frequency applications.
  • Low forward voltage drop of 1.26 V at 8 A, enhancing efficiency in power supplies.
  • High current rating of 9 A and voltage rating of 600 V, suitable for demanding power management tasks.
  • Through-hole TO-220FP package with an isolated tab, providing good thermal dissipation and ease of mounting.
  • Tin (Sn) terminal finish for improved solderability and corrosion resistance.
  • RoHS compliant, ensuring environmental safety and regulatory compliance.

Applications

  • High-frequency switched-mode power supplies.
  • Power rectification in industrial and consumer electronics.
  • Automotive and telecommunications systems requiring fast recovery diodes.
  • Medical devices and equipment needing high-efficiency rectifiers.

Q & A

  1. What is the voltage rating of the BYV29X-600,127 diode?

    The voltage rating of the BYV29X-600,127 diode is 600 V.

  2. What is the current rating of this diode?

    The current rating of the BYV29X-600,127 diode is 9 A.

  3. What is the recovery time of this diode?

    The recovery time of the BYV29X-600,127 diode is <= 500 ns.

  4. What type of package does this diode use?

    The BYV29X-600,127 diode uses a through-hole TO-220FP package with an isolated tab.

  5. Is the BYV29X-600,127 diode RoHS compliant?

    Yes, the BYV29X-600,127 diode is RoHS compliant.

  6. What is the terminal finish of this diode?

    The terminal finish of the BYV29X-600,127 diode is Tin (Sn).

  7. What are the typical applications of this diode?

    The BYV29X-600,127 diode is typically used in high-frequency switched-mode power supplies, power rectification in industrial and consumer electronics, automotive systems, and medical devices.

  8. What is the moisture sensitivity level (MSL) of this diode?

    The moisture sensitivity level (MSL) of the BYV29X-600,127 diode is 1 (Unlimited).

  9. What is the forward voltage drop of this diode at 8 A?

    The forward voltage drop of the BYV29X-600,127 diode at 8 A is 1.26 V.

  10. Is the BYV29X-600,127 diode suitable for high-frequency applications?

    Yes, the BYV29X-600,127 diode is designed for high-frequency applications due to its ultrafast recovery time.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):9A
Voltage - Forward (Vf) (Max) @ If:1.26 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220FP
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$1.00
150

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYV29X-600,127 BYV25X-600,127 BYV29-600,127 BYV29F-600,127 BYV29FX-600,127 BYV29G-600,127 BYV29X-500,127
Manufacturer WeEn Semiconductors NXP USA Inc. WeEn Semiconductors NXP Semiconductors WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Average Rectified (Io) 9A 5A 9A 9A 9A 9A 9A
Voltage - Forward (Vf) (Max) @ If 1.26 V @ 8 A 1.3 V @ 5 A 1.25 V @ 8 A 1.9 V @ 8 A 1.9 V @ 8 A 1.25 V @ 8 A 1.25 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 60 ns 60 ns 35 ns 35 ns 60 ns 60 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 500 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack TO-220-2 TO-220-2 TO-220-2 Full Pack, Isolated Tab TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220FP TO-220F TO-220AC TO-220AC TO-220FP I2PAK TO-220FP
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB

Related Product By Brand

BYV415W-600PQ
BYV415W-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 15A TO247
BYT79-600,127
BYT79-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 15A TO220AC
BT151S-800R,118
BT151S-800R,118
WeEn Semiconductors
SCR 800V 12A DPAK
BTA201-800ER,116
BTA201-800ER,116
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT139-600E,127
BT139-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 16A TO220AB
Z0107NN,135
Z0107NN,135
WeEn Semiconductors
TRIAC SENS GATE 800V 1A SC73
BTA204S-800E,118
BTA204S-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 4A DPAK
BT137-600E/L01,127
BT137-600E/L01,127
WeEn Semiconductors
TRIAC 600V 8A TO220AB
BT139B-800F,118
BT139B-800F,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
BT131W-600,135
BT131W-600,135
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BT131-800D/L01EP
BT131-800D/L01EP
WeEn Semiconductors
TRIAC SENS GATE 800V 1A
BUJ100LR,126
BUJ100LR,126
WeEn Semiconductors
TRANS NPN 400V 1A TO92-3