BYV29X-600,127
  • Share:

WeEn Semiconductors BYV29X-600,127

Manufacturer No:
BYV29X-600,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 9A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV29X-600,127 is a high-performance ultrafast rectifier diode manufactured by WeEn Semiconductors. This component is designed for use in high-frequency switched-mode power supplies and other applications requiring fast recovery times and high efficiency. The diode features a through-hole TO-220FP package with an isolated tab, making it suitable for a variety of power management and rectification tasks.

Key Specifications

Parameter Value
Voltage Rating (V) 600 V
Current Rating (A) 9 A
Forward Voltage (V) 1.26 V @ 8 A
Reverse Current (μA) 50 μA @ 600 V
Recovery Time (ns) <= 500 ns
Package Type TO-220FP (Through Hole, Isolated Tab)
Terminal Finish Tin (Sn)
RoHS Compliance Yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Ultrafast recovery time of <= 500 ns, making it ideal for high-frequency applications.
  • Low forward voltage drop of 1.26 V at 8 A, enhancing efficiency in power supplies.
  • High current rating of 9 A and voltage rating of 600 V, suitable for demanding power management tasks.
  • Through-hole TO-220FP package with an isolated tab, providing good thermal dissipation and ease of mounting.
  • Tin (Sn) terminal finish for improved solderability and corrosion resistance.
  • RoHS compliant, ensuring environmental safety and regulatory compliance.

Applications

  • High-frequency switched-mode power supplies.
  • Power rectification in industrial and consumer electronics.
  • Automotive and telecommunications systems requiring fast recovery diodes.
  • Medical devices and equipment needing high-efficiency rectifiers.

Q & A

  1. What is the voltage rating of the BYV29X-600,127 diode?

    The voltage rating of the BYV29X-600,127 diode is 600 V.

  2. What is the current rating of this diode?

    The current rating of the BYV29X-600,127 diode is 9 A.

  3. What is the recovery time of this diode?

    The recovery time of the BYV29X-600,127 diode is <= 500 ns.

  4. What type of package does this diode use?

    The BYV29X-600,127 diode uses a through-hole TO-220FP package with an isolated tab.

  5. Is the BYV29X-600,127 diode RoHS compliant?

    Yes, the BYV29X-600,127 diode is RoHS compliant.

  6. What is the terminal finish of this diode?

    The terminal finish of the BYV29X-600,127 diode is Tin (Sn).

  7. What are the typical applications of this diode?

    The BYV29X-600,127 diode is typically used in high-frequency switched-mode power supplies, power rectification in industrial and consumer electronics, automotive systems, and medical devices.

  8. What is the moisture sensitivity level (MSL) of this diode?

    The moisture sensitivity level (MSL) of the BYV29X-600,127 diode is 1 (Unlimited).

  9. What is the forward voltage drop of this diode at 8 A?

    The forward voltage drop of the BYV29X-600,127 diode at 8 A is 1.26 V.

  10. Is the BYV29X-600,127 diode suitable for high-frequency applications?

    Yes, the BYV29X-600,127 diode is designed for high-frequency applications due to its ultrafast recovery time.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):9A
Voltage - Forward (Vf) (Max) @ If:1.26 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220FP
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$1.00
150

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYV29X-600,127 BYV25X-600,127 BYV29-600,127 BYV29F-600,127 BYV29FX-600,127 BYV29G-600,127 BYV29X-500,127
Manufacturer WeEn Semiconductors NXP USA Inc. WeEn Semiconductors NXP Semiconductors WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Average Rectified (Io) 9A 5A 9A 9A 9A 9A 9A
Voltage - Forward (Vf) (Max) @ If 1.26 V @ 8 A 1.3 V @ 5 A 1.25 V @ 8 A 1.9 V @ 8 A 1.9 V @ 8 A 1.25 V @ 8 A 1.25 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 60 ns 60 ns 35 ns 35 ns 60 ns 60 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 600 V 50 µA @ 500 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack TO-220-2 TO-220-2 TO-220-2 Full Pack, Isolated Tab TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220FP TO-220F TO-220AC TO-220AC TO-220FP I2PAK TO-220FP
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
NXPSC10650Q
NXPSC10650Q
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A TO220AC
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
BT169D/01,112
BT169D/01,112
WeEn Semiconductors
SCR 400V 800MA TO92-3
Z0107NA/DG,116
Z0107NA/DG,116
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT137X-600D,127
BT137X-600D,127
WeEn Semiconductors
TRIAC SENS GATE 600V 8A TO220-3
BTA206X-800CT/DGQ
BTA206X-800CT/DGQ
WeEn Semiconductors
TRIAC STND 800V 6A TO220F
BTA204S-800C,118
BTA204S-800C,118
WeEn Semiconductors
TRIAC 800V 4A DPAK
BT134-600G,127
BT134-600G,127
WeEn Semiconductors
TRIAC 600V 4A SOT82-3
BT137-600/DG,127
BT137-600/DG,127
WeEn Semiconductors
TRIAC 600V 8A TO220AB
BT138-600-0Q
BT138-600-0Q
WeEn Semiconductors
BT138-600-0/SIL3P/STANDARD MAR