BYC20X-600PQ
  • Share:

WeEn Semiconductors BYC20X-600PQ

Manufacturer No:
BYC20X-600PQ
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 20A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC20X-600PQ is a hyperfast power diode manufactured by WeEn Semiconductors. This diode is designed for high-performance applications requiring fast switching times and low thermal resistance. It is packaged in a TO-220FP (Through Hole) configuration, making it suitable for a variety of power management and rectification tasks.

Key Specifications

ParameterConditionsMinTypMaxUnit
Voltage Rating (VRRM)---600V
Current Rating (IF(AV))---20A
Forward Voltage (VF)IF = 20 A, Tj = 25 °C-1.21.5V
Reverse Recovery Time (trr)IF = 20 A, di/dt = 200 A/μs, Tj = 25 °C--35ns
Thermal Resistance (Rth(j-a))---0.5K/W

Key Features

  • Hyperfast switching times to minimize power losses.
  • Low thermal resistance for efficient heat dissipation.
  • High voltage and current ratings (600 V, 20 A) for robust performance.
  • TO-220FP package for easy mounting and thermal management.
  • Optimized trade-off between forward voltage (VF) and reverse recovery time (trr) for improved efficiency.

Applications

The BYC20X-600PQ is suitable for various high-power applications, including:

  • Power supplies and converters.
  • Motor control and drive systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial power management and rectification.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the voltage rating of the BYC20X-600PQ diode?
    The voltage rating (VRRM) of the BYC20X-600PQ diode is 600 V.
  2. What is the current rating of the BYC20X-600PQ diode?
    The current rating (IF(AV)) of the BYC20X-600PQ diode is 20 A.
  3. What is the typical forward voltage (VF) of the BYC20X-600PQ diode?
    The typical forward voltage (VF) of the BYC20X-600PQ diode is 1.2 V at IF = 20 A and Tj = 25 °C.
  4. What is the reverse recovery time (trr) of the BYC20X-600PQ diode?
    The reverse recovery time (trr) of the BYC20X-600PQ diode is typically 35 ns.
  5. What package type is the BYC20X-600PQ diode available in?
    The BYC20X-600PQ diode is available in a TO-220FP (Through Hole) package.
  6. What are the key features of the BYC20X-600PQ diode?
    The key features include hyperfast switching times, low thermal resistance, high voltage and current ratings, and an optimized trade-off between VF and trr.
  7. What are some common applications for the BYC20X-600PQ diode?
    Common applications include power supplies, motor control systems, renewable energy systems, industrial power management, and automotive systems.
  8. How does the BYC20X-600PQ diode manage heat?
    The BYC20X-600PQ diode has a low thermal resistance (Rth(j-a)) of 0.5 K/W, which helps in efficient heat dissipation.
  9. Is the BYC20X-600PQ diode suitable for high-power applications?
    Yes, the BYC20X-600PQ diode is designed for high-power applications due to its high voltage and current ratings and fast switching times.
  10. Where can I find detailed specifications for the BYC20X-600PQ diode?
    Detailed specifications can be found in the datasheet available on the WeEn Semiconductors website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:2.5 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220FP
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
309

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC20X-600PQ BYC10X-600PQ BYC20D-600PQ BYC20DX-600PQ
Manufacturer WeEn Semiconductors WeEn Semiconductors NXP USA Inc. WeEn Semiconductors
Product Status Active Active Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 20A 10A 20A 20A
Voltage - Forward (Vf) (Max) @ If 2.5 V @ 20 A 2.9 V @ 10 A 2.9 V @ 20 A 2.9 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 40 ns 20 ns 20 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 200 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack, Isolated Tab TO-220-2 TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220FP TO-220FP TO-220AC TO-220F
Operating Temperature - Junction 175°C (Max) 150°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

BYT79-600,127
BYT79-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 15A TO220AC
BYV29-600,127
BYV29-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 9A TO220AC
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
BT151X-500RNQ
BT151X-500RNQ
WeEn Semiconductors
SCR 500V TO220-3
BT151-650C,127
BT151-650C,127
WeEn Semiconductors
SCR 650V 12A TO220AB
BTA208-600E,127
BTA208-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 8A TO220AB
Z0109MN0,135
Z0109MN0,135
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BT138X-800,127
BT138X-800,127
WeEn Semiconductors
TRIAC 800V 12A TO220-3
ACTT4S-800E,118
ACTT4S-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 4A DPAK
BTA316-600C,127
BTA316-600C,127
WeEn Semiconductors
TRIAC 600V 16A TO220AB
BT139B-800,118
BT139B-800,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
Z0107NA0QP
Z0107NA0QP
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92