BYC20X-600PQ
  • Share:

WeEn Semiconductors BYC20X-600PQ

Manufacturer No:
BYC20X-600PQ
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 20A TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC20X-600PQ is a hyperfast power diode manufactured by WeEn Semiconductors. This diode is designed for high-performance applications requiring fast switching times and low thermal resistance. It is packaged in a TO-220FP (Through Hole) configuration, making it suitable for a variety of power management and rectification tasks.

Key Specifications

ParameterConditionsMinTypMaxUnit
Voltage Rating (VRRM)---600V
Current Rating (IF(AV))---20A
Forward Voltage (VF)IF = 20 A, Tj = 25 °C-1.21.5V
Reverse Recovery Time (trr)IF = 20 A, di/dt = 200 A/μs, Tj = 25 °C--35ns
Thermal Resistance (Rth(j-a))---0.5K/W

Key Features

  • Hyperfast switching times to minimize power losses.
  • Low thermal resistance for efficient heat dissipation.
  • High voltage and current ratings (600 V, 20 A) for robust performance.
  • TO-220FP package for easy mounting and thermal management.
  • Optimized trade-off between forward voltage (VF) and reverse recovery time (trr) for improved efficiency.

Applications

The BYC20X-600PQ is suitable for various high-power applications, including:

  • Power supplies and converters.
  • Motor control and drive systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial power management and rectification.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the voltage rating of the BYC20X-600PQ diode?
    The voltage rating (VRRM) of the BYC20X-600PQ diode is 600 V.
  2. What is the current rating of the BYC20X-600PQ diode?
    The current rating (IF(AV)) of the BYC20X-600PQ diode is 20 A.
  3. What is the typical forward voltage (VF) of the BYC20X-600PQ diode?
    The typical forward voltage (VF) of the BYC20X-600PQ diode is 1.2 V at IF = 20 A and Tj = 25 °C.
  4. What is the reverse recovery time (trr) of the BYC20X-600PQ diode?
    The reverse recovery time (trr) of the BYC20X-600PQ diode is typically 35 ns.
  5. What package type is the BYC20X-600PQ diode available in?
    The BYC20X-600PQ diode is available in a TO-220FP (Through Hole) package.
  6. What are the key features of the BYC20X-600PQ diode?
    The key features include hyperfast switching times, low thermal resistance, high voltage and current ratings, and an optimized trade-off between VF and trr.
  7. What are some common applications for the BYC20X-600PQ diode?
    Common applications include power supplies, motor control systems, renewable energy systems, industrial power management, and automotive systems.
  8. How does the BYC20X-600PQ diode manage heat?
    The BYC20X-600PQ diode has a low thermal resistance (Rth(j-a)) of 0.5 K/W, which helps in efficient heat dissipation.
  9. Is the BYC20X-600PQ diode suitable for high-power applications?
    Yes, the BYC20X-600PQ diode is designed for high-power applications due to its high voltage and current ratings and fast switching times.
  10. Where can I find detailed specifications for the BYC20X-600PQ diode?
    Detailed specifications can be found in the datasheet available on the WeEn Semiconductors website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):20A
Voltage - Forward (Vf) (Max) @ If:2.5 V @ 20 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220FP
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
309

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC20X-600PQ BYC10X-600PQ BYC20D-600PQ BYC20DX-600PQ
Manufacturer WeEn Semiconductors WeEn Semiconductors NXP USA Inc. WeEn Semiconductors
Product Status Active Active Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 20A 10A 20A 20A
Voltage - Forward (Vf) (Max) @ If 2.5 V @ 20 A 2.9 V @ 10 A 2.9 V @ 20 A 2.9 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 40 ns 20 ns 20 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 200 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack, Isolated Tab TO-220-2 Full Pack, Isolated Tab TO-220-2 TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220FP TO-220FP TO-220AC TO-220F
Operating Temperature - Junction 175°C (Max) 150°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
MURS110T3G
MURS110T3G
onsemi
DIODE GEN PURP 100V 1A SMB
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

NXPSC10650Q
NXPSC10650Q
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A TO220AC
BYC8B-600PJ
BYC8B-600PJ
WeEn Semiconductors
DIODE GEN PURP 600V 8A D2PAK
BT169B,126
BT169B,126
WeEn Semiconductors
SCR 200V 800MA TO92-3
BT169G-MQP
BT169G-MQP
WeEn Semiconductors
SCR 600V 800MA TO92-3
BT138X-800,127
BT138X-800,127
WeEn Semiconductors
TRIAC 800V 12A TO220-3
Z0109MN,135
Z0109MN,135
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BTA41-600BQ
BTA41-600BQ
WeEn Semiconductors
BTA41-600BQ/II TO3P/STANDARD MAR
BT139X-600,127
BT139X-600,127
WeEn Semiconductors
TRIAC 600V 16A TO220-3
BTA316B-800C,118
BTA316B-800C,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
Z0109MA,412
Z0109MA,412
WeEn Semiconductors
TRIAC SENS GATE 600V 1A TO92-3
Z0107NA,126
Z0107NA,126
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
Z0107NA0QP
Z0107NA0QP
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92