BT168GWF,115
  • Share:

WeEn Semiconductors BT168GWF,115

Manufacturer No:
BT168GWF,115
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
SCR 600V 1A SC73
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BT168GWF,115 is a planar passivated Silicon Controlled Rectifier (SCR) produced by WeEn Semiconductors. It is designed to offer faster switching performance and a sensitive gate, making it suitable for various high-performance applications. The component is packaged in a SOT223 surface-mounted plastic package, which is compact and suitable for modern electronic designs.

Key Specifications

ParameterValue
VDRM (Repetitive Peak Off-State Voltage)600 V
VGT (Gate Trigger Voltage)1.5 V
IGT (Gate Trigger Current)200 μA
ITSM (Non-Repetitive Peak On-State Current)160 A
tq (Turn-Off Time)50 μs
Tj (Junction Temperature)-40°C to 150°C
PackageSOT223

Key Features

  • Planar passivated technology for enhanced reliability and performance.
  • Faster switching performance.
  • Sensitive gate for easy triggering.
  • Compact SOT223 surface-mounted package.
  • High repetitive peak off-state voltage (VDRM) of 600 V.
  • Low gate trigger voltage (VGT) of 1.5 V and gate trigger current (IGT) of 200 μA.

Applications

The BT168GWF,115 is suitable for a variety of applications that require high-performance and reliable switching, including:

  • Power supplies and converters.
  • Motor control circuits.
  • Lighting control systems.
  • Industrial automation and control systems.
  • Consumer electronics requiring high reliability and efficiency.

Q & A

  1. What is the BT168GWF,115? The BT168GWF,115 is a planar passivated Silicon Controlled Rectifier (SCR) produced by WeEn Semiconductors.
  2. What package type does the BT168GWF,115 use? It is packaged in a SOT223 surface-mounted plastic package.
  3. What is the repetitive peak off-state voltage (VDRM) of the BT168GWF,115? The VDRM is 600 V.
  4. What is the gate trigger voltage (VGT) and current (IGT) of the BT168GWF,115? The VGT is 1.5 V and the IGT is 200 μA.
  5. What is the turn-off time (tq) of the BT168GWF,115? The turn-off time is 50 μs.
  6. What are the typical applications of the BT168GWF,115? It is used in power supplies, motor control circuits, lighting control systems, industrial automation, and consumer electronics.
  7. What is the junction temperature range of the BT168GWF,115? The junction temperature range is -40°C to 150°C.
  8. Why is the planar passivated technology important in the BT168GWF,115? It enhances reliability and performance.
  9. Can the BT168GWF,115 handle high currents? Yes, it can handle a non-repetitive peak on-state current (ITSM) of 160 A.
  10. Where can I find detailed specifications for the BT168GWF,115? Detailed specifications can be found in the datasheet available on the manufacturer's website or through distributors like Mouser and Digi-Key.

Product Attributes

Voltage - Off State:600 V
Voltage - Gate Trigger (Vgt) (Max):800 mV
Current - Gate Trigger (Igt) (Max):450 µA
Voltage - On State (Vtm) (Max):1.7 V
Current - On State (It (AV)) (Max):630 mA
Current - On State (It (RMS)) (Max):1 A
Current - Hold (Ih) (Max):10 mA
Current - Off State (Max):100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm):8A, 9A
SCR Type:Sensitive Gate
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SC-73
0 Remaining View Similar

In Stock

$0.52
452

Please send RFQ , we will respond immediately.

Similar Products

Part Number BT168GWF,115 BT168GW,115
Manufacturer WeEn Semiconductors WeEn Semiconductors
Product Status Active Active
Voltage - Off State 600 V 600 V
Voltage - Gate Trigger (Vgt) (Max) 800 mV 800 mV
Current - Gate Trigger (Igt) (Max) 450 µA 200 µA
Voltage - On State (Vtm) (Max) 1.7 V 1.7 V
Current - On State (It (AV)) (Max) 630 mA 630 mA
Current - On State (It (RMS)) (Max) 1 A 1 A
Current - Hold (Ih) (Max) 10 mA 5 mA
Current - Off State (Max) 100 µA 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm) 8A, 9A 8A, 9A
SCR Type Sensitive Gate Sensitive Gate
Operating Temperature - -40°C ~ 125°C
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SC-73 SC-73

Related Product By Categories

MCR69-3G
MCR69-3G
Littelfuse Inc.
SCR 100V 25A TO220AB
X0202MA 2BL2
X0202MA 2BL2
STMicroelectronics
SCR 600V 1.25A TO92-3
TN2015H-6T
TN2015H-6T
STMicroelectronics
SCR 600V 20A TO220AB
X0202MA 1BA2
X0202MA 1BA2
STMicroelectronics
SCR 600V 1.25A TO92-3
TYN612MFP
TYN612MFP
STMicroelectronics
SCR 600V 12A TO220FPAB
TN1215-800G-TR
TN1215-800G-TR
STMicroelectronics
SCR 800V 12A D2PAK
BT169G,126
BT169G,126
NXP USA Inc.
NOW WEEN - BT169G - SILICON CONT
BT151-500L,127
BT151-500L,127
WeEn Semiconductors
SCR 500V 12A TO220AB
BT151X-500C,127
BT151X-500C,127
WeEn Semiconductors
SCR 500V 12A TO220-3
MCR100-6RLG
MCR100-6RLG
onsemi
SCR 400V 800MA TO92-3
MCR100-6RLRAG
MCR100-6RLRAG
onsemi
SCR 400V 800MA TO92-3
BT169G-LML
BT169G-LML
WeEn Semiconductors
SCR 600V 800MA TO92-3

Related Product By Brand

BYV42EB-200,118
BYV42EB-200,118
WeEn Semiconductors
DIODE ARRAY GP 200V 30A D2PAK
BYV25FD-600,118
BYV25FD-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 5A DPAK
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
BYC8-600P,127
BYC8-600P,127
WeEn Semiconductors
DIODE GEN PURP 600V 8A TO220AC
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
BYC20X-600PQ
BYC20X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 20A TO220F
BYC8B-600PJ
BYC8B-600PJ
WeEn Semiconductors
DIODE GEN PURP 600V 8A D2PAK
BT151X-500RNQ
BT151X-500RNQ
WeEn Semiconductors
SCR 500V TO220-3
BT151-650R,127
BT151-650R,127
WeEn Semiconductors
SCR 650V 12A TO220AB
BT151-800C,127
BT151-800C,127
WeEn Semiconductors
SCR 800V 12A TO220AB
BT169D/DG,126
BT169D/DG,126
WeEn Semiconductors
SCR 400V 800MA TO92-3
ACTT2X-800ETNQ
ACTT2X-800ETNQ
WeEn Semiconductors
ACTT2X-800ETN TO-220F STANDARD