Overview
The PHE13005X,127 is a high-voltage, high-speed NPN power switching transistor manufactured by WeEn Semiconductors. This transistor is designed in a TO-220F package, making it suitable for various high-power applications. It is characterized by its planar-passivated structure, which enhances its reliability and performance in high-frequency electronic circuits.
Key Specifications
| Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|
| VCESM (Collector-Emitter Peak Voltage) | VBE = 0 V | - | 700 | V |
| VCBO (Collector-Base Voltage) | IE = 0 A | - | 700 | V |
| VCEO (Collector-Emitter Voltage) | IB = 0 A | - | 400 | V |
| IC (Collector Current) | DC; see Figure 3 | - | 4 | A |
| ICM (Peak Collector Current) | - | - | 8 | A |
| IB (Base Current) | - | - | 2 | A |
| IBM (Peak Base Current) | - | - | 4 | A |
| Ptot (Total Power Dissipation) | Th ≤ 25 °C; see Figure 4 | - | 26 | W |
| Tstg (Storage Temperature) | - | -65 | 150 | °C |
| Tj (Junction Temperature) | - | - | 150 | °C |
| Rth(j-h) (Thermal Resistance from Junction to Heatsink) | with heatsink compound; see Figure 5 | - | 4.8 | K/W |
| Rth(j-a) (Thermal Resistance from Junction to Ambient) | - | - | 55 | K/W |
Key Features
- High-Voltage Capability: The PHE13005X,127 can handle high voltages up to 700 V, making it suitable for applications requiring robust voltage handling.
- High-Speed Switching: This transistor is designed for high-speed switching applications, ensuring efficient and rapid switching times.
- Planar-Passivated Structure: The planar-passivated structure enhances the transistor's reliability and performance in high-frequency electronic circuits.
- High Power Dissipation: With a total power dissipation of up to 26 W, this transistor can handle high-power requirements effectively.
- Wide Operating Temperature Range: The transistor can operate within a storage temperature range of -65°C to 150°C and a junction temperature of up to 150°C.
Applications
- Electronic Lighting Systems: Suitable for use in high-frequency electronic lighting systems due to its high-speed switching capabilities.
- Power Supplies: Can be used in power supply circuits that require high voltage and current handling.
- Motor Control: Applicable in motor control circuits where high current and voltage are necessary.
- Automotive Systems: Can be used in various automotive applications requiring robust and reliable power switching.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the PHE13005X,127 transistor?
The maximum collector-emitter voltage (VCEO) is 400 V.
- What is the total power dissipation (Ptot) of the transistor at 25°C?
The total power dissipation (Ptot) at 25°C is up to 26 W.
- What is the thermal resistance from junction to heatsink (Rth(j-h))?
The thermal resistance from junction to heatsink (Rth(j-h)) is up to 4.8 K/W.
- What is the maximum junction temperature (Tj) of the transistor?
The maximum junction temperature (Tj) is 150°C.
- What type of package does the PHE13005X,127 transistor come in?
The transistor comes in a TO-220F package.
- What are the typical applications of the PHE13005X,127 transistor?
Typical applications include electronic lighting systems, power supplies, motor control, and automotive systems.
- What is the maximum collector current (IC) of the transistor?
The maximum collector current (IC) is 4 A.
- What is the maximum peak collector current (ICM) of the transistor?
The maximum peak collector current (ICM) is 8 A.
- What is the collector-emitter saturation voltage (VCE(sat)) of the transistor?
The collector-emitter saturation voltage (VCE(sat)) is 300 mV.
- Is the PHE13005X,127 transistor RoHS compliant?
Yes, the transistor is RoHS compliant.
