PHE13005,127
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WeEn Semiconductors PHE13005,127

Manufacturer No:
PHE13005,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
TRANS NPN 400V 4A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The WeEn Semiconductors PHE13005,127 is a high-performance NPN bipolar junction transistor (BJT) designed for power applications. This transistor is part of the PHE series and is packaged in a TO-220AB flange mount configuration, making it suitable for a variety of power management and control systems. With its robust specifications, it is ideal for use in industrial, automotive, and consumer electronics.

Key Specifications

Parameter Description
Manufacturer WeEn Semiconductors
Part Number PHE13005,127
Package TO-220AB
Transistor Type NPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (Vce) 400V
Collector Current (Ic) 4A
Power Dissipation (Pd) 75W
Compliance ROHS compliant

Key Features

  • High Voltage and Current Capability: The PHE13005,127 can handle up to 400V and 4A, making it suitable for high-power applications.
  • High Power Dissipation: With a power dissipation of 75W, this transistor can manage significant thermal loads.
  • TO-220AB Package: The flange mount TO-220AB package provides good thermal conductivity and ease of mounting.
  • ROHS Compliance: This transistor is compliant with the Restriction of Hazardous Substances (ROHS) directive, ensuring environmental safety.

Applications

  • Power Management Systems: Suitable for use in power supplies, motor control, and other high-power management systems.
  • Automotive Electronics: Can be used in automotive applications such as engine control, lighting systems, and other high-current devices.
  • Industrial Control Systems: Ideal for industrial automation, including control of motors, pumps, and other high-power equipment.
  • Consumer Electronics: Used in various consumer electronics requiring high-power handling, such as audio amplifiers and power adapters.

Q & A

  1. What is the collector-emitter voltage rating of the PHE13005,127 transistor?

    The collector-emitter voltage rating is 400V.

  2. What is the maximum collector current for the PHE13005,127 transistor?

    The maximum collector current is 4A.

  3. What is the power dissipation capability of the PHE13005,127 transistor?

    The power dissipation capability is 75W.

  4. What package type is the PHE13005,127 transistor available in?

    The transistor is available in the TO-220AB package.

  5. Is the PHE13005,127 transistor ROHS compliant?

    Yes, the transistor is ROHS compliant.

  6. What are some common applications for the PHE13005,127 transistor?

    Common applications include power management systems, automotive electronics, industrial control systems, and consumer electronics.

  7. Where can I find the datasheet for the PHE13005,127 transistor?

    The datasheet can be found on the manufacturer's website or through distributors like LCSC, TME, and Mouser Electronics.

  8. What is the ECCN code for the PHE13005,127 transistor?

    The ECCN code is EAR99.

  9. How many pieces are in the standard packaging of the PHE13005,127 transistor?

    The standard packaging includes 50 pieces per tube.

  10. Is the PHE13005,127 transistor suitable for high-temperature applications?

    While it has good thermal management due to its TO-220AB package, specific temperature limits should be checked in the datasheet for detailed information.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1V @ 1A, 4A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 2A, 5V
Power - Max:75 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
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Similar Products

Part Number PHE13005,127 PHE13007,127 PHE13009,127 PHE13005X,127 PHD13005,127
Manufacturer WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Obsolete Active
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 4 A 8 A 12 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 400 V 400 V 400 V
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 4A 350mV @ 1A, 5A 2V @ 1.6A, 8A 1V @ 1A, 4A 1V @ 1A, 4A
Current - Collector Cutoff (Max) 100µA 200µA 100µA 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V 8 @ 2A, 5V 8 @ 5A, 5V 10 @ 2A, 5V 10 @ 2A, 5V
Power - Max 75 W 80 W 80 W 26 W 75 W
Frequency - Transition - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220F TO-220AB

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