PHD13005,127
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WeEn Semiconductors PHD13005,127

Manufacturer No:
PHD13005,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
TRANS NPN 400V 4A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PHD13005,127 is an NPN power transistor produced by WeEn Semiconductors. This bipolar junction transistor (BJT) is designed for high-power applications and features an integrated diode, enhancing its performance and reliability. The transistor is packaged in a TO-220AB plastic single-ended package, which is heatsink mounted and includes a mounting hole for secure installation. This design makes it suitable for various industrial and automotive applications where high current and voltage handling are required.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (Vce)400V
Collector Current (Ic)4A
Power Dissipation (Ptot)75W
Package TypeTO-220AB
Thermal Resistance (Rth(j-mb))1.67K/W
Thermal Resistance (Rth(j-a))60K/W
Collector-Emitter Saturation Voltage (Vce(sat))Typically 1.5 V at Ic = 2 A, Vce = 5 VV

Key Features

  • High collector-emitter voltage of 400 V, making it suitable for high-voltage applications.
  • High collector current of 4 A, enabling it to handle significant current loads.
  • Integrated diode for improved performance and reliability.
  • TO-220AB package with heatsink mounting for efficient thermal management.
  • Low collector-emitter saturation voltage, typically 1.5 V at Ic = 2 A, Vce = 5 V, for reduced power losses.

Applications

The PHD13005,127 is designed for various high-power applications, including:

  • Automotive systems: Suitable for use in automotive power systems due to its high voltage and current handling capabilities.
  • Industrial power supplies: Ideal for use in industrial power supplies where reliability and high performance are critical.
  • Motor control: Can be used in motor control circuits due to its ability to handle high current and voltage.
  • Switching applications: Suitable for inductive and resistive load switching applications.

Q & A

  1. What is the collector-emitter voltage rating of the PHD13005,127?
    The collector-emitter voltage rating is 400 V.
  2. What is the maximum collector current of the PHD13005,127?
    The maximum collector current is 4 A.
  3. What is the power dissipation capability of the PHD13005,127?
    The power dissipation capability is 75 W.
  4. What type of package does the PHD13005,127 use?
    The PHD13005,127 is packaged in a TO-220AB plastic single-ended package.
  5. What is the thermal resistance from junction to mounting base?
    The thermal resistance from junction to mounting base (Rth(j-mb)) is 1.67 K/W.
  6. What is the typical collector-emitter saturation voltage?
    The typical collector-emitter saturation voltage is 1.5 V at Ic = 2 A, Vce = 5 V.
  7. Is the PHD13005,127 suitable for automotive applications?
    Yes, it is suitable for automotive applications due to its high voltage and current handling capabilities.
  8. Can the PHD13005,127 be used in motor control circuits?
    Yes, it can be used in motor control circuits due to its ability to handle high current and voltage.
  9. What types of load switching can the PHD13005,127 handle?
    The PHD13005,127 can handle both inductive and resistive load switching applications.
  10. Does the PHD13005,127 have an integrated diode?
    Yes, the PHD13005,127 features an integrated diode for improved performance and reliability.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1V @ 1A, 4A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 2A, 5V
Power - Max:75 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
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Similar Products

Part Number PHD13005,127 PHE13005,127
Manufacturer WeEn Semiconductors WeEn Semiconductors
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 4A 1V @ 1A, 4A
Current - Collector Cutoff (Max) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A, 5V 10 @ 2A, 5V
Power - Max 75 W 75 W
Frequency - Transition - -
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220AB TO-220AB

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