BYC8-600,127
  • Share:

WeEn Semiconductors BYC8-600,127

Manufacturer No:
BYC8-600,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC8-600,127 hyperfast power diode from WeEn Semiconductors is a high-performance semiconductor component designed to offer a cost-efficient solution compared to Schottky technology. This diode is optimized for applications requiring fast switching times and low forward voltage drop, making it suitable for various power management and conversion systems.

Key Specifications

ParameterSymbolMinTypMaxUnit
Average Forward CurrentIF(AV)--8A
Maximum Off-State VoltageVRRM--600V
Forward VoltageVF1.41.852.3V
Reverse CurrentIR--3mA
Thermal Resistance (Junction to Mounting Base)Rth(j-mb)--2.2K/W
Thermal Resistance (Junction to Ambient)Rth(j-a)-60-K/W
Package Type---TO-220AC (SOD59)-

Key Features

  • Hyperfast recovery time, suitable for high-frequency applications.
  • Low forward voltage drop, reducing power losses.
  • High average forward current rating of up to 8 A.
  • Maximum off-state voltage of 600 V.
  • Thermal resistance from junction to mounting base of up to 2.2 K/W.
  • TO-220AC (SOD59) package with heatsink mounting and 1 mounting hole.

Applications

The BYC8-600,127 hyperfast power diode is ideal for various power management and conversion applications, including:

  • Switch-mode power supplies.
  • DC-DC converters.
  • Motor control systems.
  • Power factor correction circuits.
  • High-frequency inverters.

Q & A

  1. What is the maximum average forward current of the BYC8-600,127 diode?
    The maximum average forward current is 8 A.
  2. What is the maximum off-state voltage of the BYC8-600,127 diode?
    The maximum off-state voltage is 600 V.
  3. What is the typical forward voltage drop of the BYC8-600,127 diode?
    The typical forward voltage drop is 1.85 V.
  4. What is the thermal resistance from junction to mounting base of the BYC8-600,127 diode?
    The thermal resistance from junction to mounting base is up to 2.2 K/W.
  5. In what package is the BYC8-600,127 diode available?
    The diode is available in a TO-220AC (SOD59) package.
  6. What are some common applications of the BYC8-600,127 diode?
    Common applications include switch-mode power supplies, DC-DC converters, motor control systems, power factor correction circuits, and high-frequency inverters.
  7. What is the reverse current of the BYC8-600,127 diode at 100°C?
    The reverse current at 100°C is up to 3 mA.
  8. How does the BYC8-600,127 diode compare to Schottky diodes in terms of cost?
    The BYC8-600,127 diode offers a cost-efficient solution compared to Schottky technology.
  9. What is the typical thermal resistance from junction to ambient for the BYC8-600,127 diode?
    The typical thermal resistance from junction to ambient is 60 K/W.
  10. What is the recovery time of the BYC8-600,127 diode?
    The recovery time is typically around 19-52 ns depending on the conditions.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):52 ns
Current - Reverse Leakage @ Vr:150 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.94
99

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC8-600,127 BYC8X-600,127 BYC8-600P,127 BYC8D-600,127 BYC5-600,127
Manufacturer WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 500 V
Current - Average Rectified (Io) 8A 8A 8A 8A 5A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 8 A 2.9 V @ 8 A 1.9 V @ 8 A 2.9 V @ 8 A 2.9 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 52 ns 52 ns 18 ns 20 ns 50 ns
Current - Reverse Leakage @ Vr 150 µA @ 600 V 150 µA @ 600 V 20 µA @ 600 V 40 µA @ 600 V 100 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 Full Pack, Isolated Tab TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220FP TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction 150°C (Max) 150°C (Max) 175°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK

Related Product By Brand

BYV79E-200,127
BYV79E-200,127
WeEn Semiconductors
DIODE GEN PURP 200V 14A TO220AC
BYV29-600PQ
BYV29-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 9A TO220AB
BT169HML
BT169HML
WeEn Semiconductors
SCR 800V 800MA TO92-3
Z0109MN0,135
Z0109MN0,135
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BT137X-600D,127
BT137X-600D,127
WeEn Semiconductors
TRIAC SENS GATE 600V 8A TO220-3
BT137S-600,118
BT137S-600,118
WeEn Semiconductors
TRIAC STANDARD 600V 8A DPAK
Z0109MA,412
Z0109MA,412
WeEn Semiconductors
TRIAC SENS GATE 600V 1A TO92-3
BT137S-800E,118
BT137S-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 8A DPAK
BT138B-800E,118
BT138B-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 12A D2PAK
BT138-800E/DG,127
BT138-800E/DG,127
WeEn Semiconductors
TRIAC SENS GATE 800V 12A TO220AB
ACTT2S-800ETNJ
ACTT2S-800ETNJ
WeEn Semiconductors
ACTT2S-800ETNJ/DPAK
PHD13005,127
PHD13005,127
WeEn Semiconductors
TRANS NPN 400V 4A TO220AB