BYC8-600,127
  • Share:

WeEn Semiconductors BYC8-600,127

Manufacturer No:
BYC8-600,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC8-600,127 hyperfast power diode from WeEn Semiconductors is a high-performance semiconductor component designed to offer a cost-efficient solution compared to Schottky technology. This diode is optimized for applications requiring fast switching times and low forward voltage drop, making it suitable for various power management and conversion systems.

Key Specifications

ParameterSymbolMinTypMaxUnit
Average Forward CurrentIF(AV)--8A
Maximum Off-State VoltageVRRM--600V
Forward VoltageVF1.41.852.3V
Reverse CurrentIR--3mA
Thermal Resistance (Junction to Mounting Base)Rth(j-mb)--2.2K/W
Thermal Resistance (Junction to Ambient)Rth(j-a)-60-K/W
Package Type---TO-220AC (SOD59)-

Key Features

  • Hyperfast recovery time, suitable for high-frequency applications.
  • Low forward voltage drop, reducing power losses.
  • High average forward current rating of up to 8 A.
  • Maximum off-state voltage of 600 V.
  • Thermal resistance from junction to mounting base of up to 2.2 K/W.
  • TO-220AC (SOD59) package with heatsink mounting and 1 mounting hole.

Applications

The BYC8-600,127 hyperfast power diode is ideal for various power management and conversion applications, including:

  • Switch-mode power supplies.
  • DC-DC converters.
  • Motor control systems.
  • Power factor correction circuits.
  • High-frequency inverters.

Q & A

  1. What is the maximum average forward current of the BYC8-600,127 diode?
    The maximum average forward current is 8 A.
  2. What is the maximum off-state voltage of the BYC8-600,127 diode?
    The maximum off-state voltage is 600 V.
  3. What is the typical forward voltage drop of the BYC8-600,127 diode?
    The typical forward voltage drop is 1.85 V.
  4. What is the thermal resistance from junction to mounting base of the BYC8-600,127 diode?
    The thermal resistance from junction to mounting base is up to 2.2 K/W.
  5. In what package is the BYC8-600,127 diode available?
    The diode is available in a TO-220AC (SOD59) package.
  6. What are some common applications of the BYC8-600,127 diode?
    Common applications include switch-mode power supplies, DC-DC converters, motor control systems, power factor correction circuits, and high-frequency inverters.
  7. What is the reverse current of the BYC8-600,127 diode at 100°C?
    The reverse current at 100°C is up to 3 mA.
  8. How does the BYC8-600,127 diode compare to Schottky diodes in terms of cost?
    The BYC8-600,127 diode offers a cost-efficient solution compared to Schottky technology.
  9. What is the typical thermal resistance from junction to ambient for the BYC8-600,127 diode?
    The typical thermal resistance from junction to ambient is 60 K/W.
  10. What is the recovery time of the BYC8-600,127 diode?
    The recovery time is typically around 19-52 ns depending on the conditions.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:2.9 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):52 ns
Current - Reverse Leakage @ Vr:150 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.94
99

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC8-600,127 BYC8X-600,127 BYC8-600P,127 BYC8D-600,127 BYC5-600,127
Manufacturer WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 500 V
Current - Average Rectified (Io) 8A 8A 8A 8A 5A
Voltage - Forward (Vf) (Max) @ If 2.9 V @ 8 A 2.9 V @ 8 A 1.9 V @ 8 A 2.9 V @ 8 A 2.9 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 52 ns 52 ns 18 ns 20 ns 50 ns
Current - Reverse Leakage @ Vr 150 µA @ 600 V 150 µA @ 600 V 20 µA @ 600 V 40 µA @ 600 V 100 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 Full Pack, Isolated Tab TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220AC TO-220FP TO-220AC TO-220AC TO-220AC
Operating Temperature - Junction 150°C (Max) 150°C (Max) 175°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

BYV32E-200PQ
BYV32E-200PQ
WeEn Semiconductors
DIODE ARRAY GP 200V 10A TO220AB
NXPSC10650B6J
NXPSC10650B6J
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A D2PAK
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
BT151-500R,127
BT151-500R,127
WeEn Semiconductors
SCR 500V 12A TO220AB
BT148W-600R,115
BT148W-600R,115
WeEn Semiconductors
SCR 600V 1A SC73
BT151Y-650LTFQ
BT151Y-650LTFQ
WeEn Semiconductors
PLANAR PASSIVATED SILICON CONTRO
BTA208-600E,127
BTA208-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 8A TO220AB
BTA416Y-600C,127
BTA416Y-600C,127
WeEn Semiconductors
TRIAC 600V 16A TO220AB
BTA201-800ER,112
BTA201-800ER,112
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT136-600D,127
BT136-600D,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A TO220AB
BT138X-800/L02Q
BT138X-800/L02Q
WeEn Semiconductors
BT138X-800/L02/TO-220F/STANDAR
BT139-600-0TQ
BT139-600-0TQ
WeEn Semiconductors
BT139-600-0T/SIL3P/STANDARD MA