BYV79E-200,127
  • Share:

WeEn Semiconductors BYV79E-200,127

Manufacturer No:
BYV79E-200,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 200V 14A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV79E-200127 is an ultrafast rectifier diode produced by WeEn Semiconductors. This component is designed for high-frequency switched-mode power applications, leveraging advanced gold doping technology to achieve a very soft recovery characteristic. This technology helps minimize ElectroMagnetic Interference (EMI), making it suitable for a variety of high-performance electronic systems.

Key Specifications

ParameterValue
Voltage Rating (VRRM)200 V
Current Rating (IF(AV))14 A
Package TypeThrough Hole TO-220AC
Reverse Recovery Time (trr)35 ns (Typical)
Forward Voltage Drop (VF)1.2 V (Typical at IF = 14 A)
Operating Junction Temperature-40°C to +150°C

Key Features

  • Ultrafast recovery time, reducing EMI and improving system efficiency.
  • Rugged construction suitable for high-frequency switched-mode power applications.
  • Low forward voltage drop, minimizing power losses.
  • Wide operating junction temperature range, enhancing reliability in various environments.

Applications

The BYV79E-200127 is ideal for use in high-frequency switched-mode power supplies, DC-DC converters, and other applications requiring fast recovery and low EMI. It is also suitable for use in motor control circuits, power factor correction (PFC) circuits, and other high-power electronic systems.

Q & A

  1. What is the voltage rating of the BYV79E-200127?
    The voltage rating (VRRM) of the BYV79E-200127 is 200 V.
  2. What is the current rating of the BYV79E-200127?
    The current rating (IF(AV)) of the BYV79E-200127 is 14 A.
  3. What package type does the BYV79E-200127 use?
    The BYV79E-200127 uses a Through Hole TO-220AC package.
  4. What is the typical reverse recovery time of the BYV79E-200127?
    The typical reverse recovery time (trr) of the BYV79E-200127 is 35 ns.
  5. What is the typical forward voltage drop of the BYV79E-200127?
    The typical forward voltage drop (VF) of the BYV79E-200127 is 1.2 V at IF = 14 A.
  6. What is the operating junction temperature range of the BYV79E-200127?
    The operating junction temperature range of the BYV79E-200127 is -40°C to +150°C.
  7. Why is the BYV79E-200127 suitable for high-frequency applications?
    The BYV79E-200127 is suitable for high-frequency applications due to its ultrafast recovery time and low EMI characteristics.
  8. What are some common applications of the BYV79E-200127?
    The BYV79E-200127 is commonly used in high-frequency switched-mode power supplies, DC-DC converters, motor control circuits, and power factor correction (PFC) circuits.
  9. How does the gold doping technology benefit the BYV79E-200127?
    The gold doping technology in the BYV79E-200127 helps achieve a very soft recovery characteristic, minimizing EMI and improving system efficiency.
  10. Where can I purchase the BYV79E-200127?
    The BYV79E-200127 can be purchased from electronic component distributors such as Mouser Electronics and Digi-Key.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):14A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 14 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:50 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
85

Please send RFQ , we will respond immediately.

Related Product By Categories

MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

BYV25FD-600,118
BYV25FD-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 5A DPAK
BT151X-800R/DG,127
BT151X-800R/DG,127
WeEn Semiconductors
SCR 800V 12A TO220F
BT151X-800C,127
BT151X-800C,127
WeEn Semiconductors
SCR 800V 12A TO220-3
BT169DEP
BT169DEP
WeEn Semiconductors
SCR 400V 800MA TO92-3
BT145-800RTQ
BT145-800RTQ
WeEn Semiconductors
SCR 800V 25A TO220AB
ACT108W-600E,135
ACT108W-600E,135
WeEn Semiconductors
TRIAC SENS GATE 600V 0.8A SC73
BT139B-800F,118
BT139B-800F,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
Z0107NA,126
Z0107NA,126
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
Z0107NA0QP
Z0107NA0QP
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92
BT138X-800/L02Q
BT138X-800/L02Q
WeEn Semiconductors
BT138X-800/L02/TO-220F/STANDAR
Z0109MAQP
Z0109MAQP
WeEn Semiconductors
Z0109MA/TO-92/STANDARD MARKING
ACTT2S-800ETNJ
ACTT2S-800ETNJ
WeEn Semiconductors
ACTT2S-800ETNJ/DPAK