BYV79E-200,127
  • Share:

WeEn Semiconductors BYV79E-200,127

Manufacturer No:
BYV79E-200,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 200V 14A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV79E-200127 is an ultrafast rectifier diode produced by WeEn Semiconductors. This component is designed for high-frequency switched-mode power applications, leveraging advanced gold doping technology to achieve a very soft recovery characteristic. This technology helps minimize ElectroMagnetic Interference (EMI), making it suitable for a variety of high-performance electronic systems.

Key Specifications

ParameterValue
Voltage Rating (VRRM)200 V
Current Rating (IF(AV))14 A
Package TypeThrough Hole TO-220AC
Reverse Recovery Time (trr)35 ns (Typical)
Forward Voltage Drop (VF)1.2 V (Typical at IF = 14 A)
Operating Junction Temperature-40°C to +150°C

Key Features

  • Ultrafast recovery time, reducing EMI and improving system efficiency.
  • Rugged construction suitable for high-frequency switched-mode power applications.
  • Low forward voltage drop, minimizing power losses.
  • Wide operating junction temperature range, enhancing reliability in various environments.

Applications

The BYV79E-200127 is ideal for use in high-frequency switched-mode power supplies, DC-DC converters, and other applications requiring fast recovery and low EMI. It is also suitable for use in motor control circuits, power factor correction (PFC) circuits, and other high-power electronic systems.

Q & A

  1. What is the voltage rating of the BYV79E-200127?
    The voltage rating (VRRM) of the BYV79E-200127 is 200 V.
  2. What is the current rating of the BYV79E-200127?
    The current rating (IF(AV)) of the BYV79E-200127 is 14 A.
  3. What package type does the BYV79E-200127 use?
    The BYV79E-200127 uses a Through Hole TO-220AC package.
  4. What is the typical reverse recovery time of the BYV79E-200127?
    The typical reverse recovery time (trr) of the BYV79E-200127 is 35 ns.
  5. What is the typical forward voltage drop of the BYV79E-200127?
    The typical forward voltage drop (VF) of the BYV79E-200127 is 1.2 V at IF = 14 A.
  6. What is the operating junction temperature range of the BYV79E-200127?
    The operating junction temperature range of the BYV79E-200127 is -40°C to +150°C.
  7. Why is the BYV79E-200127 suitable for high-frequency applications?
    The BYV79E-200127 is suitable for high-frequency applications due to its ultrafast recovery time and low EMI characteristics.
  8. What are some common applications of the BYV79E-200127?
    The BYV79E-200127 is commonly used in high-frequency switched-mode power supplies, DC-DC converters, motor control circuits, and power factor correction (PFC) circuits.
  9. How does the gold doping technology benefit the BYV79E-200127?
    The gold doping technology in the BYV79E-200127 helps achieve a very soft recovery characteristic, minimizing EMI and improving system efficiency.
  10. Where can I purchase the BYV79E-200127?
    The BYV79E-200127 can be purchased from electronic component distributors such as Mouser Electronics and Digi-Key.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):14A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 14 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:50 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
85

Please send RFQ , we will respond immediately.

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA

Related Product By Brand

BYC20X-600,127
BYC20X-600,127
WeEn Semiconductors
DIODE GEN PURP 500V 20A TO220FP
BT151X-800R,127
BT151X-800R,127
WeEn Semiconductors
SCR 800V 12A TO220-3
BT145-800R,127
BT145-800R,127
WeEn Semiconductors
SCR 800V 25A TO220AB
BT151X-500R,127
BT151X-500R,127
WeEn Semiconductors
SCR 500V 12A TO220-3
BT139-800,127
BT139-800,127
WeEn Semiconductors
TRIAC 800V 16A TO220AB
Z0109MN0,135
Z0109MN0,135
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
Z0109MN,135
Z0109MN,135
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
ACTT2X-800E/DGQ
ACTT2X-800E/DGQ
WeEn Semiconductors
TRIAC SENS GATE 800V 2A TO220F
BTA416Y-600B,127
BTA416Y-600B,127
WeEn Semiconductors
TRIAC 600V 16A TO220AB
BTA316-800B,127
BTA316-800B,127
WeEn Semiconductors
TRIAC 800V 16A TO220AB
BT138-600E/DGQ
BT138-600E/DGQ
WeEn Semiconductors
TRIAC SENS GATE 600V 12A TO220F
Z0109MA/L01EP
Z0109MA/L01EP
WeEn Semiconductors
Z0109MA/L01/TO-92/STANDARD MAR