Overview
The BT169DEP is a logic-level thyristor produced by WeEn Semiconductors Co., Ltd. This component is part of the BT169 series, which was originally developed by NXP Semiconductors and later transferred to WeEn Semiconductors in 2017. The BT169DEP is designed to be interfaced directly with microcontrollers, logic integrated circuits, and other low-power gate trigger circuits, making it versatile for various electronic applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
VDRM (Maximum Repetitive Peak Reverse Voltage) | 400 | V |
IT(RMS) (Root Mean Square On-State Current) | 0.5 | A |
ITSM (Non-Repetitive Peak On-State Current) | 8 | A |
IGT (Gate Trigger Current) | 25 | mA |
tgt (Gate Controlled Turn-On Time) | 2 | μs |
tq (Circuit Commuted Turn-Off Time) | 100 | μs |
Tstg (Storage Temperature) | -40 to +150 | °C |
Tj (Junction Temperature) | -125 | °C |
Package | TO-92 |
Key Features
- Passivated, sensitive gate thyristors in a TO-92 plastic package.
- Designed to be interfaced directly with microcontrollers, logic integrated circuits, and other low-power gate trigger circuits.
- High voltage ratings up to 400 V and current ratings up to 0.5 A RMS.
- Low gate trigger current and voltage, making it suitable for logic-level applications.
- High non-repetitive peak on-state current capability.
- Wide operating temperature range.
Applications
- General purpose switching and phase control applications.
- Automotive systems, including ignition and fuel pump control.
- Telecommunications equipment for power management and control.
- Consumer electronics, such as lighting and appliance control.
- Industrial control systems for motor control and power management.
Q & A
- What is the BT169DEP used for?
The BT169DEP is used for general purpose switching and phase control applications, particularly in systems that require direct interface with microcontrollers and logic circuits.
- What is the maximum repetitive peak reverse voltage (VDRM) of the BT169DEP?
The maximum repetitive peak reverse voltage (VDRM) of the BT169DEP is 400 V.
- What is the root mean square on-state current (IT(RMS)) of the BT169DEP?
The root mean square on-state current (IT(RMS)) of the BT169DEP is 0.5 A.
- What is the non-repetitive peak on-state current (ITSM) of the BT169DEP?
The non-repetitive peak on-state current (ITSM) of the BT169DEP is 8 A.
- What is the gate trigger current (IGT) of the BT169DEP?
The gate trigger current (IGT) of the BT169DEP is 25 mA.
- What is the package type of the BT169DEP?
The BT169DEP comes in a TO-92 plastic package.
- What are the typical applications of the BT169DEP?
The BT169DEP is typically used in automotive systems, telecommunications equipment, consumer electronics, and industrial control systems.
- Who is the manufacturer of the BT169DEP?
The BT169DEP is manufactured by WeEn Semiconductors Co., Ltd.
- What was the origin of the BT169 series before it was transferred to WeEn Semiconductors?
The BT169 series was originally developed by NXP Semiconductors before being transferred to WeEn Semiconductors in 2017.
- What is the storage temperature range for the BT169DEP?
The storage temperature range for the BT169DEP is -40 to +150 °C.