BT169D/DG,126
  • Share:

WeEn Semiconductors BT169D/DG,126

Manufacturer No:
BT169D/DG,126
Manufacturer:
WeEn Semiconductors
Package:
Tape & Box (TB)
Description:
SCR 400V 800MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BT169D/DG,126 is a Silicon Controlled Rectifier (SCR) produced by WeEn Semiconductors. This component is designed with a sensitive gate and is packaged in a TO-92 (SOT54) plastic package. It is engineered to be interfaced directly with microcontrollers, logic ICs, and other low power gate trigger circuits, making it versatile for various electronic applications.

Key Specifications

Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT169D VDRM repetitive peak off-state voltage - - - 400 V
BT169D VRRM repetitive peak reverse voltage - - - 400 V
BT169D IT(AV) average on-state current half sine wave; Tlead ≤ 83 °C - - 0.5 A
BT169D IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C - - 0.8 A
BT169D ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms - - 8 A
BT169D ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 8.3 ms - - 9 A
BT169D IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C 50 - 200 µA
BT169D IL latching current VD = 12 V; IG = 0.5 mA; Tj = 25 °C 2 - 6 mA
BT169D IH holding current VD = 12 V; Tj = 25 °C 2 - 5 mA
BT169D dVD/dt rate of rise of off-state voltage VDM = 268 V; Tj = 125 °C; RGK = 1 kΩ; exponential waveform 500 - 800 V/µs

Key Features

  • Planar Passivation: Ensures voltage ruggedness and reliability.
  • Sensitive Gate: Allows direct triggering from low power gate circuits and logic ICs.
  • Low Power Interface: Can be interfaced directly with microcontrollers and other low power gate trigger circuits.
  • Compliance: Compliant with EU Directives RoHS, ELV, and China RoHS.
  • Packaging: Available in various packaging options including Bulk Pack, Ammopack, and Reel.

Applications

  • Ignition Circuits: Suitable for use in ignition systems due to its high voltage and current handling capabilities.
  • Lighting Ballasts: Used in lighting ballast circuits to control the flow of electrical current.
  • Protection Circuits: Employed in protection circuits to safeguard against overvoltage and overcurrent conditions.
  • Switched Mode Power Supplies (SMPS): Utilized in SMPS for efficient power management.

Q & A

  1. What is the BT169D/DG,126 used for?

    The BT169D/DG,126 is a Silicon Controlled Rectifier (SCR) used in various applications such as ignition circuits, lighting ballasts, protection circuits, and switched mode power supplies.

  2. What is the maximum off-state voltage of the BT169D/DG,126?

    The maximum off-state voltage (VDRM) is 400 V.

  3. What is the average on-state current of the BT169D/DG,126?

    The average on-state current (IT(AV)) is 0.5 A.

  4. What is the gate trigger current of the BT169D/DG,126?

    The gate trigger current (IGT) ranges from 50 µA to 200 µA.

  5. Is the BT169D/DG,126 RoHS compliant?
  6. What are the packaging options for the BT169D/DG,126?

    The component is available in Bulk Pack, Ammopack, and Reel packaging options.

  7. What is the junction temperature of the BT169D/DG,126?

    The junction temperature (Tj) is up to 125 °C.

  8. Can the BT169D/DG,126 be triggered directly by microcontrollers?
  9. What is the non-repetitive peak on-state current of the BT169D/DG,126?

    The non-repetitive peak on-state current (ITSM) is up to 9 A for a half sine wave with Tj(init) = 25 °C and tp = 8.3 ms.

  10. What is the rate of rise of off-state voltage for the BT169D/DG,126?

    The rate of rise of off-state voltage (dVD/dt) is between 500 V/µs and 800 V/µs under specified conditions.

Product Attributes

Voltage - Off State:400 V
Voltage - Gate Trigger (Vgt) (Max):800 mV
Current - Gate Trigger (Igt) (Max):200 µA
Voltage - On State (Vtm) (Max):1.7 V
Current - On State (It (AV)) (Max):500 mA
Current - On State (It (RMS)) (Max):800 mA
Current - Hold (Ih) (Max):5 mA
Current - Off State (Max):100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm):8A, 9A
SCR Type:Sensitive Gate
Operating Temperature:- 
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
0 Remaining View Similar

In Stock

-
246

Please send RFQ , we will respond immediately.

Same Series
BT169G-L,412
BT169G-L,412
SCR 600V SOT54
BT169D/01,112
BT169D/01,112
SCR 400V 800MA TO92-3
BT169D/DG,126
BT169D/DG,126
SCR 400V 800MA TO92-3
BT169G/DG,126
BT169G/DG,126
SCR 600V 800MA TO92-3

Similar Products

Part Number BT169D/DG,126 BT169G/DG,126
Manufacturer WeEn Semiconductors WeEn Semiconductors
Product Status Active Active
Voltage - Off State 400 V 600 V
Voltage - Gate Trigger (Vgt) (Max) 800 mV 800 mV
Current - Gate Trigger (Igt) (Max) 200 µA 200 µA
Voltage - On State (Vtm) (Max) 1.7 V 1.7 V
Current - On State (It (AV)) (Max) 500 mA 500 mA
Current - On State (It (RMS)) (Max) 800 mA 800 mA
Current - Hold (Ih) (Max) 5 mA 5 mA
Current - Off State (Max) 100 µA 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm) 8A, 9A 8A, 9A
SCR Type Sensitive Gate Sensitive Gate
Operating Temperature - -
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3

Related Product By Categories

MCR08MT1G
MCR08MT1G
Littelfuse Inc.
SCR 600V 800MA SOT223
X0202NN 5BA4
X0202NN 5BA4
STMicroelectronics
SCR 800V 1.25A SOT223
BT151-650LTNQ
BT151-650LTNQ
WeEn Semiconductors
SCR 650V 12A TO220AB
MCR12DSNT4G
MCR12DSNT4G
Littelfuse Inc.
SCR 800V 12A DPAK
BT258-600R,127
BT258-600R,127
WeEn Semiconductors
SCR 600V 8A TO220AB
MCR8SNG
MCR8SNG
Littelfuse Inc.
SCR 800V 8A TO220AB
BT168GWF,115
BT168GWF,115
WeEn Semiconductors
SCR 600V 1A SC73
P0102AL 5AA4
P0102AL 5AA4
STMicroelectronics
SCR 100V 250MA SOT23-3
TN5050H-12WY
TN5050H-12WY
STMicroelectronics
SCR 1.2KV 80A TO247-3
TN1215-800H
TN1215-800H
STMicroelectronics
SCR 800V 12A IPAK
MCR22-6RLRAG
MCR22-6RLRAG
onsemi
SCR 400V 1.5A TO92-3
BT151S-650L,118
BT151S-650L,118
WeEn Semiconductors
SCR 650V 12A DPAK

Related Product By Brand

NXPSC10650DJ
NXPSC10650DJ
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A DPAK
BT152-800R,127
BT152-800R,127
WeEn Semiconductors
SCR 800V 20A TO220AB
BT152B-600R,118
BT152B-600R,118
WeEn Semiconductors
SCR 650V 20A D2PAK
BT169HML
BT169HML
WeEn Semiconductors
SCR 800V 800MA TO92-3
BTA201-800ER,412
BTA201-800ER,412
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT134-600E,127
BT134-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A SOT82-3
BT139B-800G,118
BT139B-800G,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
BT137-600/DG,127
BT137-600/DG,127
WeEn Semiconductors
TRIAC 600V 8A TO220AB
BTA225B-800BTJ
BTA225B-800BTJ
WeEn Semiconductors
BTA225B-800BT/D2PAK/REEL 13" Q
PHD13005,127
PHD13005,127
WeEn Semiconductors
TRANS NPN 400V 4A TO220AB
PHE13003C,412
PHE13003C,412
WeEn Semiconductors
TRANS NPN 400V 1.5A TO92-3
PHE13005,127
PHE13005,127
WeEn Semiconductors
TRANS NPN 400V 4A TO220AB