PHE13003C,412
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WeEn Semiconductors PHE13003C,412

Manufacturer No:
PHE13003C,412
Manufacturer:
WeEn Semiconductors
Package:
Bulk
Description:
TRANS NPN 400V 1.5A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PHE13003C,412 is a high-performance NPN bipolar junction transistor (BJT) manufactured by WeEn Semiconductors. This transistor is designed for a wide range of applications requiring high current and voltage handling capabilities. It is packaged in the TO-92-3 format, making it suitable for various electronic circuits where space efficiency is crucial.

Key Specifications

Parameter Value
Transistor Type NPN
Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 2.1 V @ 1 A, 2 V
Package Type TO-92-3
Power Dissipation (Max) 2.1 W
Compliance ROHS

Key Features

  • High collector current of up to 1.5 A, making it suitable for high-current applications.
  • High collector-emitter breakdown voltage of 400 V, providing robust protection against voltage spikes.
  • Low Vce saturation voltage, ensuring efficient operation with minimal power loss.
  • Compact TO-92-3 package, ideal for space-constrained designs.
  • ROHS compliance, ensuring environmental sustainability.

Applications

The PHE13003C,412 transistor is versatile and can be used in a variety of applications, including:

  • Power amplifiers and switching circuits.
  • Motor control and driver circuits.
  • High-voltage and high-current industrial control systems.
  • Automotive electronics and lighting systems.
  • General-purpose amplification and switching in electronic devices.

Q & A

  1. What is the maximum collector current of the PHE13003C,412 transistor?

    The maximum collector current is 1.5 A.

  2. What is the maximum collector-emitter breakdown voltage of this transistor?

    The maximum collector-emitter breakdown voltage is 400 V.

  3. What is the package type of the PHE13003C,412 transistor?

    The package type is TO-92-3.

  4. Is the PHE13003C,412 ROHS compliant?

    Yes, it is ROHS compliant.

  5. What is the maximum power dissipation of this transistor?

    The maximum power dissipation is 2.1 W.

  6. What are some common applications for the PHE13003C,412 transistor?

    Common applications include power amplifiers, motor control circuits, high-voltage industrial control systems, automotive electronics, and general-purpose amplification.

  7. What is the Vce saturation voltage for the PHE13003C,412 transistor?

    The Vce saturation voltage is 2.1 V @ 1 A, 2 V.

  8. Can the PHE13003C,412 be used in high-current applications?

    Yes, it is suitable for high-current applications due to its high collector current rating.

  9. Is the PHE13003C,412 suitable for space-constrained designs?

    Yes, the compact TO-92-3 package makes it ideal for space-constrained designs.

  10. Where can I find detailed specifications for the PHE13003C,412 transistor?

    Detailed specifications can be found on the datasheet available from sources like Digi-Key, Mouser, and the manufacturer's official website.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:5 @ 1A, 2V
Power - Max:2.1 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:TO-92-3
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Same Series
PHE13003C,126
PHE13003C,126
TRANS NPN 400V 1.5A TO92-3

Similar Products

Part Number PHE13003C,412 PHD13003C,412 PHE13003A,412
Manufacturer WeEn Semiconductors WeEn Semiconductors NXP USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1 A
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 400 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 1.5A 1.5V @ 500mA, 1.5A 1.5V @ 250mA, 750mA
Current - Collector Cutoff (Max) 100µA 100µA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A, 2V 5 @ 1A, 2V 10 @ 400mA, 5V
Power - Max 2.1 W 2.1 W 2.1 W
Frequency - Transition - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3 TO-92-3 TO-92-3

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