BUJ100,126
  • Share:

WeEn Semiconductors BUJ100,126

Manufacturer No:
BUJ100,126
Manufacturer:
WeEn Semiconductors
Package:
Tape & Box (TB)
Description:
TRANS NPN 400V 1A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUJ100,126 is a high voltage, high speed planar passivated NPN power switching transistor manufactured by WeEn Semiconductors. This transistor is packaged in a SOT54 (TO92) plastic package, making it suitable for various high-frequency electronic applications. It is designed to offer fast switching capabilities, high voltage handling, and very low switching and conduction losses, which are critical for efficient performance in modern electronic systems.

Key Specifications

ParameterConditionsMinTyp/NomMaxUnit
VCESM (Collector-Emitter Peak Voltage)VBE = 0 V700V
IC (Collector Current)1A
hFE (DC Current Gain)IC = 0.75 A; VCE = 5 V; Tlead = 25 °C91420
tf (Fall Time)IC = 1 A; IBon = 200 mA; VBB = -5 V; LB = 1 µH; Tlead = 25 °C; inductive load5070ns

Key Features

  • Fast switching capabilities
  • High voltage handling (up to 700 V)
  • Very low switching and conduction losses
  • Planar passivated for high reliability
  • SOT54 (TO92) plastic package for compact design

Applications

  • High frequency electronic lighting ballasts
  • DC-to-DC converters
  • Inverters
  • Switching regulators
  • Motor control systems

Q & A

  1. What is the BUJ100,126 transistor used for?
    The BUJ100,126 is used in high-frequency electronic applications such as lighting ballasts, DC-to-DC converters, inverters, switching regulators, and motor control systems.
  2. What is the maximum collector-emitter peak voltage of the BUJ100,126?
    The maximum collector-emitter peak voltage is 700 V.
  3. What is the typical DC current gain of the BUJ100,126?
    The typical DC current gain (hFE) is 14.
  4. What is the fall time of the BUJ100,126 transistor?
    The fall time (tf) is typically 70 ns.
  5. What package type does the BUJ100,126 come in?
    The BUJ100,126 comes in a SOT54 (TO92) plastic package.
  6. Is the BUJ100,126 RoHS compliant?
    Yes, the BUJ100,126 is RoHS compliant and lead-free.
  7. What is the maximum collector current of the BUJ100,126?
    The maximum collector current is 1 A.
  8. What are the typical applications of the BUJ100,126 transistor?
    Typical applications include high frequency electronic lighting ballasts, DC-to-DC converters, inverters, switching regulators, and motor control systems.
  9. How does the planar passivation of the BUJ100,126 enhance its performance?
    The planar passivation enhances the reliability and performance of the transistor by reducing the risk of surface contamination and improving the overall durability.
  10. Where can I purchase the BUJ100,126 transistor?
    The BUJ100,126 can be purchased from distributors such as Avnet, Digi-Key, and directly from WeEn Semiconductors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1V @ 150mA, 750mA
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:9 @ 750mA, 5V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
0 Remaining View Similar

In Stock

-
201

Please send RFQ , we will respond immediately.

Same Series
BUJ100,126
BUJ100,126
TRANS NPN 400V 1A TO92-3

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
PMBTA06,235
PMBTA06,235
Nexperia USA Inc.
TRANS NPN 80V 0.5A TO236AB
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
PHN203,518
PHN203,518
NXP Semiconductors
NEXPERIA PHN203 - SMALL SIGNAL F
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
BC859C_R1_00001
BC859C_R1_00001
Panjit International Inc.
TRANS PNP 30V 0.1A SOT23
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
BU508AFTBTU
BU508AFTBTU
onsemi
TRANS NPN 700V 5A TO3PF
BC846AWT1
BC846AWT1
onsemi
TRANS NPN 65V 0.1A SC70-3
MMBT2222A_D87Z
MMBT2222A_D87Z
onsemi
TRANS NPN 40V 1A SOT23-3
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
BT151X-500RNQ
BT151X-500RNQ
WeEn Semiconductors
SCR 500V TO220-3
BT151X-650LTNQ
BT151X-650LTNQ
WeEn Semiconductors
SCR 650V 12A TO220F
BT151-650LTFQ
BT151-650LTFQ
WeEn Semiconductors
PLANAR PASSIVATED SILICON CONTRO
BT169D,116
BT169D,116
WeEn Semiconductors
SCR 400V 800MA TO92-3
BT151U-500C,127
BT151U-500C,127
WeEn Semiconductors
SCR 500V 12A IPAK
BTA41-800BQ
BTA41-800BQ
WeEn Semiconductors
BTA41-800BQ/II TO3P/STANDARD MAR
Z0107NN,135
Z0107NN,135
WeEn Semiconductors
TRIAC SENS GATE 800V 1A SC73
BTA316-600C,127
BTA316-600C,127
WeEn Semiconductors
TRIAC 600V 16A TO220AB
BT132-600D,116
BT132-600D,116
WeEn Semiconductors
TRIAC SENS GATE 600V 1A TO92-3
BT139B-800,118
BT139B-800,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
BT138-600E/DGQ
BT138-600E/DGQ
WeEn Semiconductors
TRIAC SENS GATE 600V 12A TO220F