Overview
The NXPSC10650X6Q is a silicon carbide (SiC) diode produced by WeEn Semiconductors. This component is designed to offer high performance and reliability in various power electronics applications. It features a high repetitive peak reverse voltage (VRRM) of 650V and an average forward current (IF(AV)) of 10A, making it suitable for demanding environments. The diode is packaged in a TO220F-2L plastic single-ended through-hole package with an isolated heatsink, ensuring efficient thermal management.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VRRM (Repetitive Peak Reverse Voltage) | - | - | 650 | V | |
| VRWM (Crest Working Reverse Voltage) | - | - | 650 | V | |
| IF(AV) (Average Forward Current) | δ = 0.5; Th ≤ 25 °C; square-wave pulse | - | - | 10 | A |
| IFRM (Repetitive Peak Forward Current) | δ = 0.5; tp = 25 µs; Th ≤ 25 °C; square-wave pulse | - | - | 20 | A |
| VF (Forward Voltage) | IF = 10 A; Tj = 25 °C | 1.5 | 1.7 | - | V |
| IR (Reverse Current) | VR = 650 V; Tj = 25 °C | - | - | 250 | µA |
| Rth(j-h) (Thermal Resistance from Junction to Heatsink) | with heatsink compound | - | - | 4.6 | K/W |
| Visol(RMS) (RMS Isolation Voltage) | from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; Th = 25 °C; RH = 65% | - | - | 2500 | V |
Key Features
- Highly stable switching performance
- High forward surge capability (IFSM)
- Extremely fast reverse recovery time
- High repetitive peak reverse voltage (VRRM) of 650V
- Average forward current (IF(AV)) of 10A
- Low forward voltage drop (VF) of 1.5V to 1.7V at IF = 10A and Tj = 25°C
- Isolated heatsink for efficient thermal management
- High RMS isolation voltage of up to 2500V
Applications
The NXPSC10650X6Q SiC diode is suitable for various high-power applications, including but not limited to:
- Power supplies and converters
- Motor drives and control systems
- Renewable energy systems (e.g., solar and wind power)
- Electric vehicles and charging infrastructure
- Industrial power electronics and automation systems
Q & A
- What is the repetitive peak reverse voltage (VRRM) of the NXPSC10650X6Q?
The repetitive peak reverse voltage (VRRM) is 650V. - What is the average forward current (IF(AV)) of the NXPSC10650X6Q?
The average forward current (IF(AV)) is 10A. - What is the forward voltage drop (VF) at 10A and 25°C junction temperature?
The forward voltage drop (VF) is between 1.5V and 1.7V. - What is the thermal resistance from junction to heatsink (Rth(j-h))?
The thermal resistance from junction to heatsink (Rth(j-h)) is 4.6 K/W. - What is the RMS isolation voltage from all terminals to the external heatsink?
The RMS isolation voltage is up to 2500V. - In what package is the NXPSC10650X6Q available?
The NXPSC10650X6Q is available in a TO220F-2L plastic single-ended through-hole package with an isolated heatsink. - What are some typical applications of the NXPSC10650X6Q?
Typical applications include power supplies, motor drives, renewable energy systems, electric vehicles, and industrial power electronics. - What is the reverse current (IR) at 650V and 25°C junction temperature?
The reverse current (IR) is up to 250 µA. - Does the NXPSC10650X6Q have fast reverse recovery time?
Yes, the NXPSC10650X6Q has an extremely fast reverse recovery time. - Is the NXPSC10650X6Q suitable for high-power applications?
Yes, the NXPSC10650X6Q is designed for high-power applications due to its high VRRM, IFSM, and low VF.
