BYQ28X-200,127
  • Share:

WeEn Semiconductors BYQ28X-200,127

Manufacturer No:
BYQ28X-200,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE ARRAY GP 200V 10A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28X-200,127 is a dual ultrafast power diode produced by WeEn Semiconductors. This component is designed for high-frequency switched-mode power supplies, particularly as output rectifiers. It is known for its low forward voltage and rugged construction, making it suitable for demanding applications.

Key Specifications

ParameterValue
Voltage Rating (V)200V
Current Rating (I)10A per diode
Maximum Forward Voltage (Ufmax)1.25V
Peak Surge Current (Ifsm)55A
Package TypeThrough Hole TO-220-3
Configuration1 Pair Common Cathode

Key Features

  • Ultrafast recovery time, making it suitable for high-frequency applications.
  • Low forward voltage drop, reducing power losses.
  • Rugged construction to handle high surge currents.
  • Isolated tab for improved thermal performance and electrical isolation.
  • Through Hole TO-220-3 package for easy mounting and heat dissipation.

Applications

The BYQ28X-200,127 is primarily used in high-frequency switched-mode power supplies, including but not limited to:

  • SMPS (Switch Mode Power Supplies)
  • DC-DC converters
  • Power factor correction circuits
  • High-frequency rectification applications

Q & A

  1. What is the voltage rating of the BYQ28X-200,127?
    The voltage rating is 200V.
  2. What is the current rating per diode?
    The current rating is 10A per diode.
  3. What is the maximum forward voltage of the diode?
    The maximum forward voltage is 1.25V.
  4. What is the peak surge current rating?
    The peak surge current rating is 55A.
  5. What package type does the BYQ28X-200,127 use?
    The package type is Through Hole TO-220-3.
  6. What configuration does the diode array come in?
    The diode array comes in a 1 Pair Common Cathode configuration.
  7. What are the primary applications of the BYQ28X-200,127?
    The primary applications include high-frequency switched-mode power supplies, DC-DC converters, and power factor correction circuits.
  8. Why is the BYQ28X-200,127 considered ultrafast?
    It is considered ultrafast due to its quick recovery time, making it suitable for high-frequency applications.
  9. What are the benefits of the isolated tab in the TO-220-3 package?
    The isolated tab improves thermal performance and provides electrical isolation.
  10. Where can I find detailed specifications for the BYQ28X-200,127?
    Detailed specifications can be found in the datasheet available on Mouser Electronics, Digi-Key, or other authorized distributors.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:TO-220F
0 Remaining View Similar

In Stock

$0.89
322

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYQ28X-200,127 BYQ28E-200,127
Manufacturer WeEn Semiconductors WeEn Semiconductors
Product Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) (per Diode) 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 10 A 1.25 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 200 V
Operating Temperature - Junction 150°C (Max) 150°C (Max)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3
Supplier Device Package TO-220F TO-220AB

Related Product By Categories

BAT54BRW-TP
BAT54BRW-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT363
MBRB10100CT
MBRB10100CT
SMC Diode Solutions
DIODE ARRAY SCHOTTKY 100V D2PAK
STPS3045CP
STPS3045CP
STMicroelectronics
DIODE ARRAY SCHOTTKY 45V SOT93
MBRD640CTT4G
MBRD640CTT4G
onsemi
DIODE ARRAY SCHOTTKY 40V 3A DPAK
STPS20L60CT
STPS20L60CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 60V TO220AB
BAV99W/DG/B3135
BAV99W/DG/B3135
NXP USA Inc.
NEXPERIA BAV99 - DUAL HIGH-SPEE
BAW56TA
BAW56TA
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
BAW56-7
BAW56-7
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
MBR1545CT/45
MBR1545CT/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 45V TO220AB
BAS21SLT1
BAS21SLT1
onsemi
DIODE ARRAY GP 250V 225MA SOT23
BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAT54AD REG
BAT54AD REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363

Related Product By Brand

BYQ28E-200E,127
BYQ28E-200E,127
WeEn Semiconductors
DIODE ARRAY GP 200V 10A TO220AB
NXPSC10650Q
NXPSC10650Q
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A TO220AC
BYW29E-200,127
BYW29E-200,127
WeEn Semiconductors
DIODE GEN PURP 200V 8A TO220AC
NXPSC10650BJ
NXPSC10650BJ
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A D2PAK
BT169D/DG,126
BT169D/DG,126
WeEn Semiconductors
SCR 400V 800MA TO92-3
BT131-600D,412
BT131-600D,412
WeEn Semiconductors
TRIAC SENS GATE 600V 1A TO92-3
BT134-600E,127
BT134-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A SOT82-3
Z0103MN,135
Z0103MN,135
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BT136S-800E,118
BT136S-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 4A DPAK
BT139-800G,127
BT139-800G,127
WeEn Semiconductors
TRIAC 800V 16A TO220AB
BT131-800D,116
BT131-800D,116
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT139-600G0Q
BT139-600G0Q
WeEn Semiconductors
BT139-600G0/SIL3P/STANDARD MAR