BYQ28X-200,127
  • Share:

WeEn Semiconductors BYQ28X-200,127

Manufacturer No:
BYQ28X-200,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE ARRAY GP 200V 10A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28X-200,127 is a dual ultrafast power diode produced by WeEn Semiconductors. This component is designed for high-frequency switched-mode power supplies, particularly as output rectifiers. It is known for its low forward voltage and rugged construction, making it suitable for demanding applications.

Key Specifications

ParameterValue
Voltage Rating (V)200V
Current Rating (I)10A per diode
Maximum Forward Voltage (Ufmax)1.25V
Peak Surge Current (Ifsm)55A
Package TypeThrough Hole TO-220-3
Configuration1 Pair Common Cathode

Key Features

  • Ultrafast recovery time, making it suitable for high-frequency applications.
  • Low forward voltage drop, reducing power losses.
  • Rugged construction to handle high surge currents.
  • Isolated tab for improved thermal performance and electrical isolation.
  • Through Hole TO-220-3 package for easy mounting and heat dissipation.

Applications

The BYQ28X-200,127 is primarily used in high-frequency switched-mode power supplies, including but not limited to:

  • SMPS (Switch Mode Power Supplies)
  • DC-DC converters
  • Power factor correction circuits
  • High-frequency rectification applications

Q & A

  1. What is the voltage rating of the BYQ28X-200,127?
    The voltage rating is 200V.
  2. What is the current rating per diode?
    The current rating is 10A per diode.
  3. What is the maximum forward voltage of the diode?
    The maximum forward voltage is 1.25V.
  4. What is the peak surge current rating?
    The peak surge current rating is 55A.
  5. What package type does the BYQ28X-200,127 use?
    The package type is Through Hole TO-220-3.
  6. What configuration does the diode array come in?
    The diode array comes in a 1 Pair Common Cathode configuration.
  7. What are the primary applications of the BYQ28X-200,127?
    The primary applications include high-frequency switched-mode power supplies, DC-DC converters, and power factor correction circuits.
  8. Why is the BYQ28X-200,127 considered ultrafast?
    It is considered ultrafast due to its quick recovery time, making it suitable for high-frequency applications.
  9. What are the benefits of the isolated tab in the TO-220-3 package?
    The isolated tab improves thermal performance and provides electrical isolation.
  10. Where can I find detailed specifications for the BYQ28X-200,127?
    Detailed specifications can be found in the datasheet available on Mouser Electronics, Digi-Key, or other authorized distributors.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:TO-220F
0 Remaining View Similar

In Stock

$0.89
322

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYQ28X-200,127 BYQ28E-200,127
Manufacturer WeEn Semiconductors WeEn Semiconductors
Product Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) (per Diode) 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 10 A 1.25 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 200 V
Operating Temperature - Junction 150°C (Max) 150°C (Max)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3
Supplier Device Package TO-220F TO-220AB

Related Product By Categories

BAV199,215
BAV199,215
Nexperia USA Inc.
DIODE ARRAY GP 75V 160MA SOT23
BAT54V-7
BAT54V-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT563
BAW56WT1G
BAW56WT1G
onsemi
DIODE ARRAY GP 70V 200MA SC70-3
BAV99BRVA-7
BAV99BRVA-7
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT563
BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
SB05W05C-TB-E
SB05W05C-TB-E
onsemi
DIODE ARRAY SCHOTTKY 50V 3CP
STTH16L06CT
STTH16L06CT
STMicroelectronics
DIODE ARRAY GP 600V 10A TO220AB
BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAV23C-G3-18
BAV23C-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
MBRD620CTT4
MBRD620CTT4
onsemi
DIODE ARRAY SCHOTTKY 20V 3A DPAK
BAS40W-06-7
BAS40W-06-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT323

Related Product By Brand

BYV25D-600,118
BYV25D-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 5A DPAK
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
BT151-650LTNQ
BT151-650LTNQ
WeEn Semiconductors
SCR 650V 12A TO220AB
BT151Y-650LTFQ
BT151Y-650LTFQ
WeEn Semiconductors
PLANAR PASSIVATED SILICON CONTRO
BT151X-800R,127
BT151X-800R,127
WeEn Semiconductors
SCR 800V 12A TO220-3
BT169DEP
BT169DEP
WeEn Semiconductors
SCR 400V 800MA TO92-3
BT139-600,127
BT139-600,127
WeEn Semiconductors
TRIAC 600V 16A TO220AB
Z0107NN0,135
Z0107NN0,135
WeEn Semiconductors
TRIAC SENS GATE 800V 1A SC73
BTA208S-800E,118
BTA208S-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 8A DPAK
BT138-600-0Q
BT138-600-0Q
WeEn Semiconductors
BT138-600-0/SIL3P/STANDARD MAR
BTA316-800CTQ
BTA316-800CTQ
WeEn Semiconductors
BTA316-800CTQ/SIL3P/STANDARD MAR