BYQ28X-200,127
  • Share:

WeEn Semiconductors BYQ28X-200,127

Manufacturer No:
BYQ28X-200,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE ARRAY GP 200V 10A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28X-200,127 is a dual ultrafast power diode produced by WeEn Semiconductors. This component is designed for high-frequency switched-mode power supplies, particularly as output rectifiers. It is known for its low forward voltage and rugged construction, making it suitable for demanding applications.

Key Specifications

ParameterValue
Voltage Rating (V)200V
Current Rating (I)10A per diode
Maximum Forward Voltage (Ufmax)1.25V
Peak Surge Current (Ifsm)55A
Package TypeThrough Hole TO-220-3
Configuration1 Pair Common Cathode

Key Features

  • Ultrafast recovery time, making it suitable for high-frequency applications.
  • Low forward voltage drop, reducing power losses.
  • Rugged construction to handle high surge currents.
  • Isolated tab for improved thermal performance and electrical isolation.
  • Through Hole TO-220-3 package for easy mounting and heat dissipation.

Applications

The BYQ28X-200,127 is primarily used in high-frequency switched-mode power supplies, including but not limited to:

  • SMPS (Switch Mode Power Supplies)
  • DC-DC converters
  • Power factor correction circuits
  • High-frequency rectification applications

Q & A

  1. What is the voltage rating of the BYQ28X-200,127?
    The voltage rating is 200V.
  2. What is the current rating per diode?
    The current rating is 10A per diode.
  3. What is the maximum forward voltage of the diode?
    The maximum forward voltage is 1.25V.
  4. What is the peak surge current rating?
    The peak surge current rating is 55A.
  5. What package type does the BYQ28X-200,127 use?
    The package type is Through Hole TO-220-3.
  6. What configuration does the diode array come in?
    The diode array comes in a 1 Pair Common Cathode configuration.
  7. What are the primary applications of the BYQ28X-200,127?
    The primary applications include high-frequency switched-mode power supplies, DC-DC converters, and power factor correction circuits.
  8. Why is the BYQ28X-200,127 considered ultrafast?
    It is considered ultrafast due to its quick recovery time, making it suitable for high-frequency applications.
  9. What are the benefits of the isolated tab in the TO-220-3 package?
    The isolated tab improves thermal performance and provides electrical isolation.
  10. Where can I find detailed specifications for the BYQ28X-200,127?
    Detailed specifications can be found in the datasheet available on Mouser Electronics, Digi-Key, or other authorized distributors.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:TO-220F
0 Remaining View Similar

In Stock

$0.89
322

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYQ28X-200,127 BYQ28E-200,127
Manufacturer WeEn Semiconductors WeEn Semiconductors
Product Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) (per Diode) 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 10 A 1.25 V @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V 10 µA @ 200 V
Operating Temperature - Junction 150°C (Max) 150°C (Max)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3
Supplier Device Package TO-220F TO-220AB

Related Product By Categories

BAT54V-7
BAT54V-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT563
BAV170-7-F
BAV170-7-F
Diodes Incorporated
DIODE ARRAY GP 85V 125MA SOT23-3
BAT5404WH6327XTSA1
BAT5404WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT323
BAT54S,215
BAT54S,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT23
BAS16VY,165
BAS16VY,165
Nexperia USA Inc.
DIODE ARRAY GP 100V 200MA 6TSSOP
BAV99STB6-AU_R1_000A1
BAV99STB6-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
BAV23C-G3-18
BAV23C-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
MUR3060WT
MUR3060WT
onsemi
DIODE ARRAY GP 600V 15A TO247
BAW56SB6327XT
BAW56SB6327XT
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS 40-05 B5003
BAS 40-05 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
MBRB2545CTG
MBRB2545CTG
onsemi
DIODE ARRAY SCHOTTKY 45V D2PAK
BAW56W/DG/B3X
BAW56W/DG/B3X
Nexperia USA Inc.
DIODE SWITCHING SOT363

Related Product By Brand

BYV29X-600,127
BYV29X-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 9A TO220FP
BYC8-600,127
BYC8-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 8A TO220AC
BYT79-600,127
BYT79-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 15A TO220AC
BT169G-LML
BT169G-LML
WeEn Semiconductors
SCR 600V 800MA TO92-3
BT145-800RTQ
BT145-800RTQ
WeEn Semiconductors
SCR 800V 25A TO220AB
BTA416Y-800B,127
BTA416Y-800B,127
WeEn Semiconductors
TRIAC 800V 16A TO220AB
BTA312X-600C,127
BTA312X-600C,127
WeEn Semiconductors
TRIAC 600V 12A TO220F
BT136S-800E,118
BT136S-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 4A DPAK
BT139B-800E,118
BT139B-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 16A D2PAK
BT131-800E/L01EP
BT131-800E/L01EP
WeEn Semiconductors
BT131-800E/L01/TO-92/STANDARD
BT138-600G0Q
BT138-600G0Q
WeEn Semiconductors
BT138-600G0/SIL3P/STANDARD MAR
BTA206X-800CT/L03Q
BTA206X-800CT/L03Q
WeEn Semiconductors
BTA206X-800CT/L03/TO-220F/STAN