BUJ100,412
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WeEn Semiconductors BUJ100,412

Manufacturer No:
BUJ100,412
Manufacturer:
WeEn Semiconductors
Package:
Bulk
Description:
TRANS NPN 400V 1A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUJ100,412 is a bipolar junction transistor (BJT) produced by WeEn Semiconductors. It is an NPN general-purpose transistor, designed for a wide range of applications requiring high voltage and current handling capabilities. The transistor is packaged in a TO-92-3 through-hole configuration, making it suitable for various electronic circuits and systems.

Key Specifications

ParameterValue
Collector-Emitter Breakdown Voltage (Vceo)400V
Collector Current (Ic)1A
Power Dissipation (Pd)2.1W
DC Current Gain (hFE@Ic,Vce)10@400mA,5V
Package TypeTO-92-3 Through Hole

Key Features

  • High collector-emitter breakdown voltage of 400V, making it suitable for high-voltage applications.
  • Collector current of 1A, allowing for substantial current handling.
  • Power dissipation of 2.1W, ensuring reliable operation under various load conditions.
  • General-purpose NPN transistor, versatile for use in a wide range of electronic circuits.
  • TO-92-3 through-hole package, easy to integrate into existing designs.

Applications

The BUJ100,412 transistor is suitable for various applications, including:

  • Power amplifiers and switching circuits due to its high voltage and current capabilities.
  • Industrial control systems where reliability and robustness are crucial.
  • Automotive electronics, such as in ignition systems and other high-voltage applications.
  • Consumer electronics, including audio amplifiers and other general-purpose circuits.

Q & A

  1. What is the collector-emitter breakdown voltage of the BUJ100,412 transistor?
    The collector-emitter breakdown voltage (Vceo) is 400V.
  2. What is the maximum collector current of the BUJ100,412 transistor?
    The maximum collector current (Ic) is 1A.
  3. What is the power dissipation of the BUJ100,412 transistor?
    The power dissipation (Pd) is 2.1W.
  4. What is the DC current gain of the BUJ100,412 transistor?
    The DC current gain (hFE@Ic,Vce) is 10 at 400mA and 5V.
  5. What package type does the BUJ100,412 transistor use?
    The transistor is packaged in a TO-92-3 through-hole configuration.
  6. What are some common applications of the BUJ100,412 transistor?
    Common applications include power amplifiers, industrial control systems, automotive electronics, and consumer electronics.
  7. Is the BUJ100,412 transistor suitable for high-voltage applications?
    Yes, it is suitable for high-voltage applications due to its 400V collector-emitter breakdown voltage.
  8. Can the BUJ100,412 transistor be used in audio amplifiers?
    Yes, it can be used in audio amplifiers and other general-purpose circuits.
  9. Where can I find the datasheet for the BUJ100,412 transistor?
    The datasheet can be found on the manufacturer's website or through distributors like Mouser, Digi-Key, and TME.
  10. What is the typical use case for the BUJ100,412 transistor in industrial settings?
    In industrial settings, it is often used in control systems where reliability and robustness are essential.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1V @ 150mA, 750mA
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:9 @ 750mA, 5V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:TO-92-3
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