BYV29X-600AQ
  • Share:

WeEn Semiconductors BYV29X-600AQ

Manufacturer No:
BYV29X-600AQ
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV29X-600AQ rectifier diode, produced by WeEn Semiconductors, is an ultrafast rectifier designed for high-efficiency applications. This diode is housed in a TO-220F package, which includes an isolated heatsink for improved thermal management. The BYV29X-600AQ is characterized by its low leakage current, low thermal resistance, and fast recovery times, making it suitable for a variety of power conversion and rectification tasks.

Key Specifications

Parameter Conditions Min Typ Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - 600 V
IF(AV) (Average Forward Current) square waveform; δ = 0.5; Th ≤85 °C - - 9 A
IFRM (Repetitive Peak Forward Current) t = 25 µs; square waveform; δ = 0.5; Th ≤85 °C - - 18 A
IFSM (Non-Repetitive Peak Forward Current) t = 10 ms; sinusoidal waveform - - 91 A
Tstg (Storage Temperature) - -40 150 °C
Tj (Junction Temperature) - - 150 °C
VF (Forward Voltage) IF = 8 A; Tj = 150 °C - 1.12 1.26 V
IR (Reverse Current) VR = 600 V; Tj = 100 °C 0.1 - 0.35 mA
trr (Reverse Recovery Time) IF = 1 A to VR ≥30 V; dIF/dt = 100 A/µs 50 - 60 ns
Rth(j-h) (Thermal Resistance from Junction to Heatsink) with heatsink compound - - 5.5 K/W

Key Features

  • Ultrafast Recovery Time: The BYV29X-600AQ features a fast recovery time of 50-60 ns, making it suitable for high-frequency applications.
  • Low Leakage Current: Designed with platinum doped technology (SABER), this diode exhibits low leakage current even at high temperatures.
  • Low Thermal Resistance: The TO-220F package with an isolated heatsink ensures low thermal resistance, enhancing the diode's thermal management capabilities.
  • High Efficiency: The diode is optimized for high-efficiency applications, with a forward voltage drop as low as 1.12 V at 8 A.
  • High Surge Current Capability: The diode can handle non-repetitive peak forward currents up to 91 A for 10 ms, ensuring robust performance under transient conditions.

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and AC-DC converters due to its fast recovery and low forward voltage drop.
  • Motor Control: Can be used in motor control circuits where high efficiency and fast switching times are critical.
  • Renewable Energy Systems: Applicable in solar and wind power systems for rectification and power conversion.
  • Industrial Power Systems: Used in various industrial power systems requiring high reliability and efficiency.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYV29X-600AQ?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the average forward current rating of the BYV29X-600AQ?

    The average forward current rating is 9 A.

  3. What is the reverse recovery time of the BYV29X-600AQ?

    The reverse recovery time is between 50-60 ns.

  4. What is the thermal resistance from junction to heatsink for the BYV29X-600AQ?

    The thermal resistance from junction to heatsink is 5.5 K/W with heatsink compound.

  5. What technology is used to achieve low leakage current in the BYV29X-600AQ?

    The diode is designed with platinum doped technology (SABER) to achieve low leakage current.

  6. What is the storage temperature range for the BYV29X-600AQ?

    The storage temperature range is from -40 °C to 150 °C.

  7. What is the maximum junction temperature for the BYV29X-600AQ?

    The maximum junction temperature is 150 °C.

  8. What is the forward voltage drop at 8 A for the BYV29X-600AQ?

    The forward voltage drop at 8 A is between 1.12 V and 1.26 V.

  9. Can the BYV29X-600AQ handle high surge currents?

    Yes, it can handle non-repetitive peak forward currents up to 91 A for 10 ms.

  10. In what types of applications is the BYV29X-600AQ commonly used?

    It is commonly used in power supplies, motor control circuits, renewable energy systems, and industrial power systems.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
151

Please send RFQ , we will respond immediately.

Same Series
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP

Related Product By Categories

PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
BAS21Q-7-F
BAS21Q-7-F
Diodes Incorporated
DIODE GP SW SOT23
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F

Related Product By Brand

NXPSC10650B6J
NXPSC10650B6J
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A D2PAK
BYC15-600,127
BYC15-600,127
WeEn Semiconductors
DIODE GEN PURP 500V 15A TO220AC
BT151Y-650LTFQ
BT151Y-650LTFQ
WeEn Semiconductors
PLANAR PASSIVATED SILICON CONTRO
BTA416Y-600B,127
BTA416Y-600B,127
WeEn Semiconductors
TRIAC 600V 16A TO220AB
BTA225-800B,127
BTA225-800B,127
WeEn Semiconductors
TRIAC 800V 25A TO220AB
BTA140-800,127
BTA140-800,127
WeEn Semiconductors
TRIAC 800V 25A TO220AB
BT139B-800F,118
BT139B-800F,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
BT136-600,127
BT136-600,127
WeEn Semiconductors
TRIAC 600V 4A TO220AB
BT138X-800E,127
BT138X-800E,127
WeEn Semiconductors
TRIAC SENS GATE 800V 12A TO220-3
ACTT2X-800ETNQ
ACTT2X-800ETNQ
WeEn Semiconductors
ACTT2X-800ETN TO-220F STANDARD
BTA316-800C/L05Q
BTA316-800C/L05Q
WeEn Semiconductors
BTA316-800C L05Q SIL3P STANDARD
BTA316X-800CTQ
BTA316X-800CTQ
WeEn Semiconductors
BTA316X-800CTQ/TO-220F/STANDARD