BYV29X-600AQ
  • Share:

WeEn Semiconductors BYV29X-600AQ

Manufacturer No:
BYV29X-600AQ
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYV29X-600AQ rectifier diode, produced by WeEn Semiconductors, is an ultrafast rectifier designed for high-efficiency applications. This diode is housed in a TO-220F package, which includes an isolated heatsink for improved thermal management. The BYV29X-600AQ is characterized by its low leakage current, low thermal resistance, and fast recovery times, making it suitable for a variety of power conversion and rectification tasks.

Key Specifications

Parameter Conditions Min Typ Max Unit
VRRM (Repetitive Peak Reverse Voltage) - - 600 V
IF(AV) (Average Forward Current) square waveform; δ = 0.5; Th ≤85 °C - - 9 A
IFRM (Repetitive Peak Forward Current) t = 25 µs; square waveform; δ = 0.5; Th ≤85 °C - - 18 A
IFSM (Non-Repetitive Peak Forward Current) t = 10 ms; sinusoidal waveform - - 91 A
Tstg (Storage Temperature) - -40 150 °C
Tj (Junction Temperature) - - 150 °C
VF (Forward Voltage) IF = 8 A; Tj = 150 °C - 1.12 1.26 V
IR (Reverse Current) VR = 600 V; Tj = 100 °C 0.1 - 0.35 mA
trr (Reverse Recovery Time) IF = 1 A to VR ≥30 V; dIF/dt = 100 A/µs 50 - 60 ns
Rth(j-h) (Thermal Resistance from Junction to Heatsink) with heatsink compound - - 5.5 K/W

Key Features

  • Ultrafast Recovery Time: The BYV29X-600AQ features a fast recovery time of 50-60 ns, making it suitable for high-frequency applications.
  • Low Leakage Current: Designed with platinum doped technology (SABER), this diode exhibits low leakage current even at high temperatures.
  • Low Thermal Resistance: The TO-220F package with an isolated heatsink ensures low thermal resistance, enhancing the diode's thermal management capabilities.
  • High Efficiency: The diode is optimized for high-efficiency applications, with a forward voltage drop as low as 1.12 V at 8 A.
  • High Surge Current Capability: The diode can handle non-repetitive peak forward currents up to 91 A for 10 ms, ensuring robust performance under transient conditions.

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and AC-DC converters due to its fast recovery and low forward voltage drop.
  • Motor Control: Can be used in motor control circuits where high efficiency and fast switching times are critical.
  • Renewable Energy Systems: Applicable in solar and wind power systems for rectification and power conversion.
  • Industrial Power Systems: Used in various industrial power systems requiring high reliability and efficiency.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BYV29X-600AQ?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the average forward current rating of the BYV29X-600AQ?

    The average forward current rating is 9 A.

  3. What is the reverse recovery time of the BYV29X-600AQ?

    The reverse recovery time is between 50-60 ns.

  4. What is the thermal resistance from junction to heatsink for the BYV29X-600AQ?

    The thermal resistance from junction to heatsink is 5.5 K/W with heatsink compound.

  5. What technology is used to achieve low leakage current in the BYV29X-600AQ?

    The diode is designed with platinum doped technology (SABER) to achieve low leakage current.

  6. What is the storage temperature range for the BYV29X-600AQ?

    The storage temperature range is from -40 °C to 150 °C.

  7. What is the maximum junction temperature for the BYV29X-600AQ?

    The maximum junction temperature is 150 °C.

  8. What is the forward voltage drop at 8 A for the BYV29X-600AQ?

    The forward voltage drop at 8 A is between 1.12 V and 1.26 V.

  9. Can the BYV29X-600AQ handle high surge currents?

    Yes, it can handle non-repetitive peak forward currents up to 91 A for 10 ms.

  10. In what types of applications is the BYV29X-600AQ commonly used?

    It is commonly used in power supplies, motor control circuits, renewable energy systems, and industrial power systems.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
151

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

BYV32EB-200,118
BYV32EB-200,118
WeEn Semiconductors
DIODE ARRAY GP 200V 20A D2PAK
BT151U-500C,127
BT151U-500C,127
WeEn Semiconductors
SCR 500V 12A IPAK
BT137-800E,127
BT137-800E,127
WeEn Semiconductors
TRIAC SENS GATE 800V 8A TO220AB
BT138-600E,127
BT138-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 12A TO220AB
Z0103NN,135
Z0103NN,135
WeEn Semiconductors
TRIAC SENS GATE 800V 1A SC73
Z0109MA0,412
Z0109MA0,412
WeEn Semiconductors
TRIAC SENS GATE 600V 1A TO92-3
BTA225-800B,127
BTA225-800B,127
WeEn Semiconductors
TRIAC 800V 25A TO220AB
BT136-600D/DG,127
BT136-600D/DG,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A TO220AB
BT136S-600E,118
BT136S-600E,118
WeEn Semiconductors
TRIAC SENS GATE 600V 4A DPAK
BTA420X-800CT/L02Q
BTA420X-800CT/L02Q
WeEn Semiconductors
TRIAC 800V 20A
BTA420X-800CT/L03Q
BTA420X-800CT/L03Q
WeEn Semiconductors
BTA420X-800CT/L03/TO-220F/STAN
PHE13005,127
PHE13005,127
WeEn Semiconductors
TRANS NPN 400V 4A TO220AB