NXPSC10650BJ
  • Share:

WeEn Semiconductors NXPSC10650BJ

Manufacturer No:
NXPSC10650BJ
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 650V 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NXPSC10650BJ is a Silicon Carbide (SiC) Schottky diode produced by WeEn Semiconductors. This diode is designed for high-efficiency and high-power applications, leveraging the advantages of SiC technology such as low forward voltage drop, fast switching times, and high thermal stability. The NXPSC10650BJ is particularly suited for use in power conversion systems, including DC-DC converters, power supplies, and motor drives, where high reliability and performance are critical.

Key Specifications

ParameterValue
Part NumberNXPSC10650BJ
ManufacturerWeEn Semiconductors
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Average Rectified (Io)10 A
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Reverse Recovery Time (trr)0 ns
Operating Temperature - Junction-55°C to 175°C
Current - Reverse Leakage @ Vr250 µA @ 650 V
Capacitance @ Vr, F300 pF @ 1 V, 1 MHz
Mounting TypeSurface Mount
TechnologySilicon Carbide (SiC) Schottky

Key Features

  • Low Forward Voltage Drop: The NXPSC10650BJ features a low forward voltage drop of 1.7 V at 10 A, reducing power losses and increasing efficiency.
  • Fast Switching Times: With zero reverse recovery time, this diode ensures fast and efficient switching, making it ideal for high-frequency applications.
  • High Thermal Stability: The diode operates over a wide temperature range from -55°C to 175°C, ensuring reliable performance in various environmental conditions.
  • High Power Handling: Capable of handling 10 A of average rectified current and 650 V of DC reverse voltage, this diode is suitable for high-power applications.
  • Surface Mount Package: The TO-263-3, D²Pak package facilitates easy integration into surface mount designs.

Applications

  • DC-DC Converters: Ideal for use in high-efficiency DC-DC converters due to its low forward voltage drop and fast switching times.
  • Power Supplies: Suitable for power supply units requiring high reliability and efficiency.
  • Motor Drives: Used in motor drive systems where high power handling and fast switching are necessary.
  • Renewable Energy Systems: Applicable in solar and wind power systems to enhance efficiency and reliability.

Q & A

  1. What is the maximum DC reverse voltage of the NXPSC10650BJ?
    The maximum DC reverse voltage is 650 V.
  2. What is the average rectified current (Io) of the NXPSC10650BJ?
    The average rectified current (Io) is 10 A.
  3. What is the forward voltage drop (Vf) of the NXPSC10650BJ at 10 A?
    The forward voltage drop (Vf) is 1.7 V at 10 A.
  4. What is the reverse recovery time (trr) of the NXPSC10650BJ?
    The reverse recovery time (trr) is 0 ns.
  5. What is the operating temperature range of the NXPSC10650BJ?
    The operating temperature range is from -55°C to 175°C.
  6. What type of package does the NXPSC10650BJ use?
    The package type is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
  7. What technology is used in the NXPSC10650BJ?
    The technology used is Silicon Carbide (SiC) Schottky.
  8. What is the capacitance of the NXPSC10650BJ at 1 V and 1 MHz?
    The capacitance is 300 pF at 1 V and 1 MHz.
  9. Is the NXPSC10650BJ suitable for surface mount applications?
    Yes, it is suitable for surface mount applications.
  10. What are some common applications of the NXPSC10650BJ?
    Common applications include DC-DC converters, power supplies, motor drives, and renewable energy systems.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:250 µA @ 650 V
Capacitance @ Vr, F:300pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
508

Please send RFQ , we will respond immediately.

Same Series
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NXPSC10650BJ NXPSC10650B6J
Manufacturer WeEn Semiconductors WeEn Semiconductors
Product Status Discontinued at Digi-Key Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V
Current - Average Rectified (Io) 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 250 µA @ 650 V 250 µA @ 650 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz 300pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK
Operating Temperature - Junction 175°C (Max) 175°C (Max)

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23

Related Product By Brand

BYV32EB-200PQ
BYV32EB-200PQ
WeEn Semiconductors
DIODE ARRAY GP 200V 20A D2PAK
BYC8X-600,127
BYC8X-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 8A TO220FP
BYC8B-600PJ
BYC8B-600PJ
WeEn Semiconductors
DIODE GEN PURP 600V 8A D2PAK
BYV29X-600PQ
BYV29X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 9A TO220F
BT152-600R,127
BT152-600R,127
WeEn Semiconductors
SCR 650V 20A TO220AB
BT151S-650SJ
BT151S-650SJ
WeEn Semiconductors
SCR 650V 12A DPAK
BT139B-800G,118
BT139B-800G,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
BT139X-600,127
BT139X-600,127
WeEn Semiconductors
TRIAC 600V 16A TO220-3
BT138B-800E,118
BT138B-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 12A D2PAK
BT138X-800E,127
BT138X-800E,127
WeEn Semiconductors
TRIAC SENS GATE 800V 12A TO220-3
BT131-800EQP
BT131-800EQP
WeEn Semiconductors
BT131-800E/TO-92/STANDARD MARK
Z0109MAQP
Z0109MAQP
WeEn Semiconductors
Z0109MA/TO-92/STANDARD MARKING