NXPSC10650BJ
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WeEn Semiconductors NXPSC10650BJ

Manufacturer No:
NXPSC10650BJ
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 650V 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NXPSC10650BJ is a Silicon Carbide (SiC) Schottky diode produced by WeEn Semiconductors. This diode is designed for high-efficiency and high-power applications, leveraging the advantages of SiC technology such as low forward voltage drop, fast switching times, and high thermal stability. The NXPSC10650BJ is particularly suited for use in power conversion systems, including DC-DC converters, power supplies, and motor drives, where high reliability and performance are critical.

Key Specifications

ParameterValue
Part NumberNXPSC10650BJ
ManufacturerWeEn Semiconductors
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Average Rectified (Io)10 A
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Reverse Recovery Time (trr)0 ns
Operating Temperature - Junction-55°C to 175°C
Current - Reverse Leakage @ Vr250 µA @ 650 V
Capacitance @ Vr, F300 pF @ 1 V, 1 MHz
Mounting TypeSurface Mount
TechnologySilicon Carbide (SiC) Schottky

Key Features

  • Low Forward Voltage Drop: The NXPSC10650BJ features a low forward voltage drop of 1.7 V at 10 A, reducing power losses and increasing efficiency.
  • Fast Switching Times: With zero reverse recovery time, this diode ensures fast and efficient switching, making it ideal for high-frequency applications.
  • High Thermal Stability: The diode operates over a wide temperature range from -55°C to 175°C, ensuring reliable performance in various environmental conditions.
  • High Power Handling: Capable of handling 10 A of average rectified current and 650 V of DC reverse voltage, this diode is suitable for high-power applications.
  • Surface Mount Package: The TO-263-3, D²Pak package facilitates easy integration into surface mount designs.

Applications

  • DC-DC Converters: Ideal for use in high-efficiency DC-DC converters due to its low forward voltage drop and fast switching times.
  • Power Supplies: Suitable for power supply units requiring high reliability and efficiency.
  • Motor Drives: Used in motor drive systems where high power handling and fast switching are necessary.
  • Renewable Energy Systems: Applicable in solar and wind power systems to enhance efficiency and reliability.

Q & A

  1. What is the maximum DC reverse voltage of the NXPSC10650BJ?
    The maximum DC reverse voltage is 650 V.
  2. What is the average rectified current (Io) of the NXPSC10650BJ?
    The average rectified current (Io) is 10 A.
  3. What is the forward voltage drop (Vf) of the NXPSC10650BJ at 10 A?
    The forward voltage drop (Vf) is 1.7 V at 10 A.
  4. What is the reverse recovery time (trr) of the NXPSC10650BJ?
    The reverse recovery time (trr) is 0 ns.
  5. What is the operating temperature range of the NXPSC10650BJ?
    The operating temperature range is from -55°C to 175°C.
  6. What type of package does the NXPSC10650BJ use?
    The package type is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
  7. What technology is used in the NXPSC10650BJ?
    The technology used is Silicon Carbide (SiC) Schottky.
  8. What is the capacitance of the NXPSC10650BJ at 1 V and 1 MHz?
    The capacitance is 300 pF at 1 V and 1 MHz.
  9. Is the NXPSC10650BJ suitable for surface mount applications?
    Yes, it is suitable for surface mount applications.
  10. What are some common applications of the NXPSC10650BJ?
    Common applications include DC-DC converters, power supplies, motor drives, and renewable energy systems.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:250 µA @ 650 V
Capacitance @ Vr, F:300pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
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Similar Products

Part Number NXPSC10650BJ NXPSC10650B6J
Manufacturer WeEn Semiconductors WeEn Semiconductors
Product Status Discontinued at Digi-Key Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V
Current - Average Rectified (Io) 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 250 µA @ 650 V 250 µA @ 650 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz 300pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK
Operating Temperature - Junction 175°C (Max) 175°C (Max)

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