NXPSC10650B6J
  • Share:

WeEn Semiconductors NXPSC10650B6J

Manufacturer No:
NXPSC10650B6J
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 650V 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NXPSC10650B6J is a Silicon Carbide (SiC) Schottky diode produced by WeEn Semiconductors. This component is designed for high-performance applications requiring low forward voltage drop and fast switching times. The SiC technology offers superior characteristics over traditional silicon diodes, including higher voltage ratings, lower losses, and improved thermal management. The NXPSC10650B6J is packaged in a D2PAK (TO-263-3) case, making it suitable for surface mount applications.

Key Specifications

ParameterValue
Part NumberNXPSC10650B6J
ManufacturerWeEn Semiconductors
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Average Rectified (Io)10 A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max)650 V
TechnologySilicon Carbide (SiC) Schottky
Capacitance @ Vr, F300 pF @ 1 V, 1 MHz
Operating Temperature - Junction175°C (Max)
Current - Reverse Leakage @ Vr250 µA @ 650 V
Mounting TypeSurface Mount
Reverse Recovery Time (trr)0 ns

Key Features

  • High Voltage Rating: The NXPSC10650B6J has a maximum DC reverse voltage of 650 V, making it suitable for high-voltage applications.
  • Low Forward Voltage Drop: With a maximum forward voltage drop of 1.7 V at 10 A, this diode minimizes power losses.
  • Fast Switching Times: The SiC technology ensures zero recovery time, enhancing the efficiency and speed of the circuit.
  • High Operating Temperature: The diode can operate up to a junction temperature of 175°C, making it robust for demanding environments.
  • Surface Mount Package: The D2PAK package is ideal for surface mount applications, offering ease of integration and compact design.

Applications

  • Power Supplies: Suitable for high-efficiency power supplies, including switch-mode power supplies and DC-DC converters.
  • Motor Drives: Used in motor drive systems where high voltage and current handling are required.
  • Renewable Energy Systems: Ideal for solar and wind power systems due to its high efficiency and reliability.
  • Automotive Systems: Can be used in various automotive applications requiring high voltage and current handling.
  • Industrial Power Systems: Suitable for industrial power systems, including UPS systems and high-power inverters.

Q & A

  1. What is the maximum DC reverse voltage of the NXPSC10650B6J?
    The maximum DC reverse voltage is 650 V.
  2. What is the forward voltage drop at 10 A for the NXPSC10650B6J?
    The forward voltage drop is 1.7 V at 10 A.
  3. What is the operating temperature range of the NXPSC10650B6J?
    The junction temperature can operate up to 175°C.
  4. What type of package does the NXPSC10650B6J come in?
    The diode is packaged in a D2PAK (TO-263-3) case.
  5. Is the NXPSC10650B6J suitable for surface mount applications?
    Yes, it is designed for surface mount applications.
  6. What is the reverse recovery time of the NXPSC10650B6J?
    The reverse recovery time is 0 ns.
  7. What technology is used in the NXPSC10650B6J?
    The diode uses Silicon Carbide (SiC) Schottky technology.
  8. What is the average rectified current (Io) of the NXPSC10650B6J?
    The average rectified current is 10 A.
  9. What is the capacitance at 1 V and 1 MHz for the NXPSC10650B6J?
    The capacitance is 300 pF at 1 V and 1 MHz.
  10. What are some common applications of the NXPSC10650B6J?
    Common applications include power supplies, motor drives, renewable energy systems, automotive systems, and industrial power systems.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:250 µA @ 650 V
Capacitance @ Vr, F:300pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$6.19
19

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number NXPSC10650B6J NXPSC10650D6J NXPSC10650BJ
Manufacturer WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A 1.7 V @ 10 A 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 250 µA @ 650 V 250 µA @ 650 V 250 µA @ 650 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz 300pF @ 1V, 1MHz 300pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK DPAK D2PAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BYT79-600,127
BYT79-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 15A TO220AC
BT151X-500RNQ
BT151X-500RNQ
WeEn Semiconductors
SCR 500V TO220-3
BT169D,112
BT169D,112
WeEn Semiconductors
SCR 400V 800MA TO92-3
BT151S-500L,118
BT151S-500L,118
WeEn Semiconductors
SCR 500V 12A DPAK
BT131-600,412
BT131-600,412
WeEn Semiconductors
TRIAC SENS GATE 600V 1A TO92-3
BT139-600E/DG,127
BT139-600E/DG,127
WeEn Semiconductors
TRIAC SENS GATE 600V 16A TO220AB
Z0107NA0,412
Z0107NA0,412
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT134-600G,127
BT134-600G,127
WeEn Semiconductors
TRIAC 600V 4A SOT82-3
BT138-600G0TQ
BT138-600G0TQ
WeEn Semiconductors
BT138-600G0T/SIL3P/STANDARD MA
BTA316X-800C/L01Q
BTA316X-800C/L01Q
WeEn Semiconductors
BTA316X-800C/L01/TO-220F/STAND
PHE13003C,412
PHE13003C,412
WeEn Semiconductors
TRANS NPN 400V 1.5A TO92-3
PHE13005X/01,127
PHE13005X/01,127
WeEn Semiconductors
TRANS NPN 400V 4A TO-220F