NXPSC10650B6J
  • Share:

WeEn Semiconductors NXPSC10650B6J

Manufacturer No:
NXPSC10650B6J
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 650V 10A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NXPSC10650B6J is a Silicon Carbide (SiC) Schottky diode produced by WeEn Semiconductors. This component is designed for high-performance applications requiring low forward voltage drop and fast switching times. The SiC technology offers superior characteristics over traditional silicon diodes, including higher voltage ratings, lower losses, and improved thermal management. The NXPSC10650B6J is packaged in a D2PAK (TO-263-3) case, making it suitable for surface mount applications.

Key Specifications

ParameterValue
Part NumberNXPSC10650B6J
ManufacturerWeEn Semiconductors
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Average Rectified (Io)10 A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max)650 V
TechnologySilicon Carbide (SiC) Schottky
Capacitance @ Vr, F300 pF @ 1 V, 1 MHz
Operating Temperature - Junction175°C (Max)
Current - Reverse Leakage @ Vr250 µA @ 650 V
Mounting TypeSurface Mount
Reverse Recovery Time (trr)0 ns

Key Features

  • High Voltage Rating: The NXPSC10650B6J has a maximum DC reverse voltage of 650 V, making it suitable for high-voltage applications.
  • Low Forward Voltage Drop: With a maximum forward voltage drop of 1.7 V at 10 A, this diode minimizes power losses.
  • Fast Switching Times: The SiC technology ensures zero recovery time, enhancing the efficiency and speed of the circuit.
  • High Operating Temperature: The diode can operate up to a junction temperature of 175°C, making it robust for demanding environments.
  • Surface Mount Package: The D2PAK package is ideal for surface mount applications, offering ease of integration and compact design.

Applications

  • Power Supplies: Suitable for high-efficiency power supplies, including switch-mode power supplies and DC-DC converters.
  • Motor Drives: Used in motor drive systems where high voltage and current handling are required.
  • Renewable Energy Systems: Ideal for solar and wind power systems due to its high efficiency and reliability.
  • Automotive Systems: Can be used in various automotive applications requiring high voltage and current handling.
  • Industrial Power Systems: Suitable for industrial power systems, including UPS systems and high-power inverters.

Q & A

  1. What is the maximum DC reverse voltage of the NXPSC10650B6J?
    The maximum DC reverse voltage is 650 V.
  2. What is the forward voltage drop at 10 A for the NXPSC10650B6J?
    The forward voltage drop is 1.7 V at 10 A.
  3. What is the operating temperature range of the NXPSC10650B6J?
    The junction temperature can operate up to 175°C.
  4. What type of package does the NXPSC10650B6J come in?
    The diode is packaged in a D2PAK (TO-263-3) case.
  5. Is the NXPSC10650B6J suitable for surface mount applications?
    Yes, it is designed for surface mount applications.
  6. What is the reverse recovery time of the NXPSC10650B6J?
    The reverse recovery time is 0 ns.
  7. What technology is used in the NXPSC10650B6J?
    The diode uses Silicon Carbide (SiC) Schottky technology.
  8. What is the average rectified current (Io) of the NXPSC10650B6J?
    The average rectified current is 10 A.
  9. What is the capacitance at 1 V and 1 MHz for the NXPSC10650B6J?
    The capacitance is 300 pF at 1 V and 1 MHz.
  10. What are some common applications of the NXPSC10650B6J?
    Common applications include power supplies, motor drives, renewable energy systems, automotive systems, and industrial power systems.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:250 µA @ 650 V
Capacitance @ Vr, F:300pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$6.19
19

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number NXPSC10650B6J NXPSC10650D6J NXPSC10650BJ
Manufacturer WeEn Semiconductors WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A 1.7 V @ 10 A 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 250 µA @ 650 V 250 µA @ 650 V 250 µA @ 650 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz 300pF @ 1V, 1MHz 300pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK DPAK D2PAK
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
MBRS130L
MBRS130L
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2A, 30V
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

BYV415W-600PQ
BYV415W-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 15A TO247
BYW29E-200,127
BYW29E-200,127
WeEn Semiconductors
DIODE GEN PURP 200V 8A TO220AC
BT151-650R,127
BT151-650R,127
WeEn Semiconductors
SCR 650V 12A TO220AB
BT151X-800R,127
BT151X-800R,127
WeEn Semiconductors
SCR 800V 12A TO220-3
BT151-800R,127
BT151-800R,127
WeEn Semiconductors
SCR 800V 12A TO220AB
BT169G-MQP
BT169G-MQP
WeEn Semiconductors
SCR 600V 800MA TO92-3
Z0107NN,135
Z0107NN,135
WeEn Semiconductors
TRIAC SENS GATE 800V 1A SC73
BTA225-800B,127
BTA225-800B,127
WeEn Semiconductors
TRIAC 800V 25A TO220AB
BT138X-800F,127
BT138X-800F,127
WeEn Semiconductors
TRIAC 800V 12A TO220-3
BT139-600-0Q
BT139-600-0Q
WeEn Semiconductors
BT139-600-0/SIL3P/STANDARD MAR
PHE13005,127
PHE13005,127
WeEn Semiconductors
TRANS NPN 400V 4A TO220AB
BUJ100LR,126
BUJ100LR,126
WeEn Semiconductors
TRANS NPN 400V 1A TO92-3