BYC8-600P,127
  • Share:

WeEn Semiconductors BYC8-600P,127

Manufacturer No:
BYC8-600P,127
Manufacturer:
WeEn Semiconductors
Package:
Tube
Description:
DIODE GEN PURP 600V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYC8-600P,127 is a high-voltage rectifier diode manufactured by WeEn Semiconductors. This component is designed to handle high voltage and current requirements, making it suitable for various industrial and power supply applications. The diode features a robust construction and is available in a through-hole (THT) package, ensuring reliable performance in demanding environments.

Key Specifications

ParameterConditionsMinTypMaxUnit
Voltage Rating (V_RRM)---600V
Forward Current (I_F(AV))---8A
Peak Forward Surge Current (I_FSM)t_p = 8.3 ms; T_j(init) = 25°C; sine-wave pulse--100A
Reverse Recovery Time (t_rr)I_F = 1 A; V_R = 30 V; dI_F/dt = 50 A/μs--200ns
Forward Voltage Drop (V_F)I_F = 8 A; T_j = 25°C-1.72.2V

Key Features

  • High voltage rating of 600V, making it suitable for high-voltage applications.
  • Forward current rating of 8A, ensuring high current handling capability.
  • Peak forward surge current of up to 100A, providing protection against transient surges.
  • Low forward voltage drop of 1.7V to 2.2V at 8A, minimizing power losses.
  • Through-hole (THT) package for easy mounting and reliable connections.

Applications

The BYC8-600P,127 rectifier diode is widely used in various applications, including:

  • Power supplies and rectifier circuits.
  • Industrial power systems and motor control.
  • High-voltage DC-DC converters.
  • Automotive and aerospace systems requiring high reliability.

Q & A

  1. What is the voltage rating of the BYC8-600P,127 diode?
    The voltage rating of the BYC8-600P,127 diode is 600V.
  2. What is the forward current rating of this diode?
    The forward current rating is 8A.
  3. What is the peak forward surge current of this diode?
    The peak forward surge current is up to 100A under specific conditions.
  4. What is the typical forward voltage drop of this diode?
    The typical forward voltage drop is 1.7V at 8A.
  5. What type of package does the BYC8-600P,127 come in?
    The BYC8-600P,127 comes in a through-hole (THT) package.
  6. What are some common applications for this diode?
  7. What is the reverse recovery time of this diode?
    The reverse recovery time is up to 200ns under specific conditions.
  8. Is this diode suitable for high-temperature environments?
    While it can operate in various temperatures, it is essential to refer to the datasheet for specific temperature ratings and derating factors.
  9. Where can I purchase the BYC8-600P,127 diode?
    You can purchase the BYC8-600P,127 diode from distributors such as Mouser, Digi-Key, Farnell, and TME.
  10. What is the significance of the '127' in the part number BYC8-600P,127?
    The '127' typically refers to the packaging or specific variant of the component, but it is best to consult the manufacturer's documentation for precise details.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.9 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):18 ns
Current - Reverse Leakage @ Vr:20 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

-
447

Please send RFQ , we will respond immediately.

Similar Products

Part Number BYC8-600P,127 BYC8X-600P,127 BYC8-600,127
Manufacturer WeEn Semiconductors NXP USA Inc. WeEn Semiconductors
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 8 A 1.9 V @ 8 A 2.9 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 18 ns 18 ns 52 ns
Current - Reverse Leakage @ Vr 20 µA @ 600 V 20 µA @ 600 V 150 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 Full Pack TO-220-2
Supplier Device Package TO-220AC TO-220F TO-220AC
Operating Temperature - Junction 175°C (Max) 175°C (Max) 150°C (Max)

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC

Related Product By Brand

NXPSC10650X6Q
NXPSC10650X6Q
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A TO220F
BYT79-500,127
BYT79-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 14A TO220AC
BT151S-650R,118
BT151S-650R,118
WeEn Semiconductors
SCR 650V 12A DPAK
BT169G-L,412
BT169G-L,412
WeEn Semiconductors
SCR 600V SOT54
BT145-800R,127
BT145-800R,127
WeEn Semiconductors
SCR 800V 25A TO220AB
BT151-650C,127
BT151-650C,127
WeEn Semiconductors
SCR 650V 12A TO220AB
BTA208-600E,127
BTA208-600E,127
WeEn Semiconductors
TRIAC SENS GATE 600V 8A TO220AB
BT131-600D,412
BT131-600D,412
WeEn Semiconductors
TRIAC SENS GATE 600V 1A TO92-3
BT136S-600D,118
BT136S-600D,118
WeEn Semiconductors
TRIAC SENS GATE 600V 4A DPAK
BT131-800E/L01EP
BT131-800E/L01EP
WeEn Semiconductors
BT131-800E/L01/TO-92/STANDARD
BT139-600G0TQ
BT139-600G0TQ
WeEn Semiconductors
BT139-600G0T/SIL3P/STANDARD MA
Z0109MAML
Z0109MAML
WeEn Semiconductors
Z0109MA/TO-92/STANDARD MARKING